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    Memory array having memory cells formed from metallic material
    21.
    发明授权
    Memory array having memory cells formed from metallic material 有权
    具有由金属材料形成的存储单元的存储器阵列

    公开(公告)号：US07615771B2

    公开(公告)日：2009-11-10

    申请号：US11380498

    申请日：2006-04-27

    申请人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： H01L27/20

    CPC分类号： G11C11/16 ,  G11C11/1675

    摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

    摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

    DAMPING CONTROL IN MAGNETIC NANO-ELEMENTS USING ULTRATHIN DAMPING LAYER
    22.
    发明申请
    DAMPING CONTROL IN MAGNETIC NANO-ELEMENTS USING ULTRATHIN DAMPING LAYER 审中-公开
    使用超声波阻尼层的磁性纳米元件的阻尼控制

    公开(公告)号：US20080088983A1

    公开(公告)日：2008-04-17

    申请号：US11548506

    申请日：2006-10-11

    申请人： Gereon Meyer ,  Manfred Ernst Schabes ,  Jan-Ulrich Thiele

    发明人： Gereon Meyer ,  Manfred Ernst Schabes ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/127

    CPC分类号： G11B31/02 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3146 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/32

    摘要： A layer system, a method for forming the layer system, and devices utilizing the layer system are provided. In one embodiment, the method includes providing a bilayer system comprised of a first layer including a first ferromagnetic material doped with a dopant material selected from one of a 4d transition metal, 5d transition metal, and 4f rare earth metal. The dopant material may be predetermined to provide a magnetic damping in the bilayer which is greater than the magnetic damping in the first ferromagnetic material. The first layer may be very thin, e.g., less than or equal to two nanometers thick. The method also includes providing a second layer disposed on the first layer. The second layer includes a second ferromagnetic material and the second layer may be greater than or equal to two nanometers thick.

    摘要翻译： 提供层系统，形成层系统的方法以及利用层系统的装置。 在一个实施例中，该方法包括提供包括第一层的双层系统，第一层包括掺杂有选自4d过渡金属，5d过渡金属和4f稀土金属之一的掺杂剂材料的第一铁磁材料。 可以预定掺杂剂材料以在双层中提供大于第一铁磁材料中的磁阻尼的磁阻尼。 第一层可能非常薄，例如小于或等于2纳米厚。 该方法还包括提供设置在第一层上的第二层。 第二层包括第二铁磁材料，第二层可以大于或等于两纳米厚。

    Method for thermally-assisted recording on a magnetic recording disk
    24.
    发明授权
    Method for thermally-assisted recording on a magnetic recording disk 失效
    在磁记录盘上进行热辅助记录的方法

    公开(公告)号：US06834026B2

    公开(公告)日：2004-12-21

    申请号：US10626362

    申请日：2003-07-23

    申请人： Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： G11B1100

    CPC分类号： G11B5/66 ,  G11B5/82 ,  G11B2005/0002 ,  G11B2005/0021 ,  Y10T428/24802

    摘要： A magnetic recording medium for thermally-assisted recording is a bilayer of a high-coercivity, high-anisotropy ferromagnetic material like FePt and a switching material like FeRh or Fe(RhM) (where M is Ir, Pt, Ru, Re or Os) that exhibits a switch from antiferromagnetic to ferromagnetic at a transition temperature less than the Curie temperature of the high-coercivity material. The high-coercivity recording layer and the switching layer are exchange coupled ferromagnetically when the switching layer is in its ferromagnetic state. To write data the bilayer medium is heated above the transition temperature of the switching layer. When the switching layer becomes ferromagnetic, the total magnetization of the bilayer is increased, and consequently the switching field required to reverse a magnetized bit is decreased without lowering the anisotropy of the recording layer. The magnetic bit pattern is recorded in both the recording layer and the switching layer. When the media is cooled to below the transition temperature of the switching layer, the switching layer becomes antiferromagnetic and the bit pattern remains in the high-anisotropy recording layer.

    摘要翻译： 用于热辅助记录的磁记录介质是诸如FePt的高矫顽力，高各向异性铁磁材料和诸如FeRh或Fe（RhM）（其中M是Ir，Pt，Ru，Re或Os）的开关材料的双层， 其在低于高矫顽力材料的居里温度的转变温度下表现出从反铁磁转变为铁磁。 当高矫顽力记录层和开关层在开关层处于其铁磁状态时，铁磁性交换耦合。 为了写入数据，双层介质被加热到开关层的转变温度之上。 当开关层成为铁磁性时，双层的总磁化强度增加，因此在不降低记录层的各向异性的情况下降低了使磁化位反转所需的切换场。 磁记录层记录在记录层和切换层中。 当介质冷却到切换层的转变温度以下时，开关层变为反铁磁性，并且位图形保留在高各向异性记录层中。

    Magnetic recording media for tilted recording
    26.
    发明授权
    Magnetic recording media for tilted recording 有权
    用于倾斜记录的磁记录介质

    公开(公告)号：US07405011B2

    公开(公告)日：2008-07-29

    申请号：US10882881

    申请日：2004-06-30

    申请人： Barry Cushing Stipe ,  Jan-Ulrich Thiele

    发明人： Barry Cushing Stipe ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/82 ,  G11B5/84

    摘要： A recording medium according to the invention has a magnetic recording layer with an L10 magnetic material deposited with a (111) preferred orientation and soft underlayer (SUL). One set of embodiments includes an intermediate layer (seed layer or underlayer) between the L10 media and SUL. The intermediate layer can be a close-packed surface structure (triangular lattice) to promote (111) orientation of the L10 media. For example, the intermediate layer can be a (111) oriented, face-centered-cubic (fcc) material such as platinum, palladium, iridium, rhodium, FePt, FePd, or FePdPt alloys; or the intermediate layer can be a (100) oriented hexagonal-close-packed (hcp) material such as ruthenium, rhenium, or osmium. Alternatively, the intermediate layer can be an amorphous material. The L10 recording layer of the invention can be deposited with a matrix material to form grain boundaries and provide magnetic isolation of the grains of L10 material.

    摘要翻译： 根据本发明的记录介质具有磁记录层，其具有沉积有（111）优选取向和软底层（SUL）的L1 <0>磁性材料。 一组实施例包括在L1介质和SUL之间的中间层（种子层或底层）。 中间层可以是紧密堆积的表面结构（三角形格子），以促进L1介质的（111）取向。 例如，中间层可以是（111）取向的面心立方（fcc）材料，例如铂，钯，铱，铑，FePt，FePd或FePdPt合金; 或中间层可以是（100）取向的六方密堆积（hcp）材料，例如钌，铼或锇。 或者，中间层可以是无定形材料。 本发明的L1＆lt; 0＆gt;记录层可以用基质材料沉积以形成晶界并提供L1 <0>材料的晶粒的磁隔离。

    MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER
    27.
    发明申请
    MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER 审中-公开
    磁记录系统，具有与抗磁反应转移层交换耦合到记录层的介质

    公开(公告)号：US20080100964A1

    公开(公告)日：2008-05-01

    申请号：US11553215

    申请日：2006-10-26

    申请人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

    发明人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/82 ,  G11B5/65

    CPC分类号： G11B5/64 ,  G11B5/1278 ,  G11B5/3103

    摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.

    摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H

    Horizontal magnetic recording media having grains of chemically-ordered FEPT of COPT
    30.
    发明授权
    Horizontal magnetic recording media having grains of chemically-ordered FEPT of COPT 失效
    具有COPT化学有序FEPT晶粒的水平磁记录介质

    公开(公告)号：US6086974A

    公开(公告)日：2000-07-11

    申请号：US920938

    申请日：1997-08-29

    申请人： Jan-Ulrich Thiele ,  Dieter Klaus Weller

    发明人： Jan-Ulrich Thiele ,  Dieter Klaus Weller

    IPC分类号： G11B5/64 ,  G11B5/73 ,  G11B5/66

    CPC分类号： G11B5/732 ,  G11B5/653 ,  G11B5/656 ,  Y10S428/90 ,  Y10T428/265

    摘要： A horizontal magnetic recording medium that has as its magnetic film a granular film with grains of a chemically-ordered FePt or FePtX (or CoPt or CoPtX) alloy in the tetragonal L1.sub.0 structure uses an etched seed layer beneath the granular film. The granular magnetic film reveals a very high magnetocrystalline anisotropy within the individual grains. The film is produced by sputtering from a single alloy target or cosputtering from several targets. The granular structure and the chemical ordering are controlled by means of sputter parameters, e.g., temperature and deposition rate, and by the use of the etched seed layer that provides a structure for the subsequently sputter-deposited granular magnetic film. The structure of the seed layer is obtained by sputter etching, plasma etching, ion irradiation, or laser irradiation. The magnetic properties, i.e., H.sub.c and areal moment density M.sub.r t, are controlled by the granularity (grain size and grain distribution), the degree of chemical ordering, and the addition of one or more nonmagnetic materials, such as Cr, Ag, Cu, Ta, or B. The resulting granular magnetic film has magnetic properties suitable for application in high-density, horizontal magnetic recording media.

    摘要翻译： 具有作为其磁性膜的水平磁记录介质，其具有在四方晶L10结构中具有化学有序FePt或FePtX（或CoPt或CoPtX）合金的颗粒的颗粒膜，其使用颗粒膜下方的蚀刻种子层。 颗粒状磁性膜显示各晶粒内的非常高的磁晶各向异性。 该膜通过从单个合金靶溅射或从几个靶的共溅射制造。 颗粒结构和化学排序通过溅射参数（例如温度和沉积速率）以及通过使用提供随后溅射沉积的颗粒状磁性膜的结构的蚀刻种子层来控制。 种子层的结构通过溅射蚀刻，等离子体蚀刻，离子照射或激光照射获得。 磁特性，即Hc和面积密度Mrt由颗粒度（晶粒尺寸和晶粒分布），化学排序程度以及添加一种或多种非磁性材料如Cr，Ag，Cu， Ta或B.所得粒状磁性膜具有适用于高密度水平磁记录介质的磁性能。