公开(公告)号：US08124985B2

公开(公告)日：2012-02-28

申请号：US11815759

申请日：2006-02-07

申请人： Mitsuhiko Sakai ,  Atsushi Yamaguchi ,  Ken Nakahara ,  Masayuki Sonobe ,  Tsuyoshi Tsutsui

发明人： Mitsuhiko Sakai ,  Atsushi Yamaguchi ,  Ken Nakahara ,  Masayuki Sonobe ,  Tsuyoshi Tsutsui

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/60

摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).

摘要翻译： 提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。 在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。 第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5））， 并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。 通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

公开(公告)号：US07906791B2

公开(公告)日：2011-03-15

申请号：US11916868

申请日：2006-03-03

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0083

摘要： Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is nzλ, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is θz, a periodic interval Lz between adjacent concave portions is set in a range of λ/nzλ≦Lz≦λ/(nzλ×(1−sin θz)).

摘要翻译： 提高了半导体发光元件的光提取效率。 在半导体发光元件的蓝宝石衬底上层叠缓冲层，n型GaN层，InGaN发射层和p型GaN层。 在p型GaN层上设置有作为透明电极的ZnO层，在ZnO层的表面上以二维周期的间隔形成凹部。 如果来自空气中的InGaN发射层的光的波长为λ，则ZnO层在波长λ处的折射率为nzλ，ZnO层与与其接触的介质的界面处的全反射角为 相邻凹部之间的周期性间隔Lz设定在λ/nzλ＆lt; ll; Lz＆lt; ll;λ/（nzλ×（1-sin＆amp; tt; z））的范围内。

公开(公告)号：US07872269B2

公开(公告)日：2011-01-18

申请号：US12085836

申请日：2006-11-29

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/16 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3216

摘要： Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer.A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.

摘要翻译： 提供一种氮化镓半导体发光元件，其能够通过减少归因于在AlGaN半导体层和GaN半导体层之间的界面处产生的自发极化和压电极化的载流子耗尽来稳定驱动电压。 在蓝宝石衬底1的R平面上形成包括发光区域的氮化镓半导体晶体2.此外，在另一构造中，在GaN衬底3的A平面上或在GaN衬底3的A平面上形成氮化镓半导体晶体2 这些氮化镓半导体晶体2的生长面不是N（氮）极面或Ga极性面，而是非极性面。 这可以降低在p侧的GaN / AlGaN界面处产生的自发极化和压电极化引起的电场的强度。 因此，可以避免载体耗尽。

公开(公告)号：US20100183045A1

公开(公告)日：2010-07-22

申请号：US12452809

申请日：2008-07-22

申请人： Ken Nakahara ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

IPC分类号： G01J5/00

CPC分类号： G01J5/08 ,  C23C14/08 ,  C23C14/086 ,  C23C14/541 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0875 ,  G01J2005/0048 ,  G01J2005/0081 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554

摘要： A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window.

摘要翻译： 基板温度测量装置包括：加热基板的加热源; 透射窗，其透过红外线不能透过基板的波长范围内的红外线; 以及温度测量仪器，其具有包括波长范围的灵敏度范围，并且通过分析从由所述加热源加热并已透射通过透射窗的衬底辐射的红外线来测量衬底的衬底温度。

公开(公告)号：US20090057695A1

公开(公告)日：2009-03-05

申请号：US12223784

申请日：2007-02-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0079 ,  H01L33/32

摘要： A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer includes: an n-type GaN contact layer including n-type impurity-doped GaN having an electron concentration ranging from 5×1016 cm−3 to 5×1018 cm−3; the n-electrode provided on one of a main surface of the n-type GaN contact layer; and a generating layer provided on other main surface of the n-type GaN contact layer, including at least any one of AlxGa1-xN (0

摘要翻译： 根据本发明的氮化物半导体器件至少依次包括n电极，n型半导体层，有源层和p型半导体层。 n型半导体层包括：n型GaN接触层，其包含具有5×10 16 cm -3至5×10 18 cm -3的电子浓度的n型杂质掺杂的GaN; n电极，设置在n型GaN接触层的主表面之一上; 和包含Al x Ga 1-x N（0

公开(公告)号：US20080308836A1

公开(公告)日：2008-12-18

申请号：US11883062

申请日：2006-01-26

申请人： Ken Nakahara ,  Kentaro Tamura

发明人： Ken Nakahara ,  Kentaro Tamura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

摘要： There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method.

摘要翻译： 提供了一种氮化物半导体器件，例如氮化物半导体发光器件，晶体管器件等，其通过形成氮化物半导体的单晶的缓冲层而获得，其中a轴和c轴都被对准 直接在与氮化物半导体晶格失配的衬底上，而不形成非晶低温缓冲层，并且在单晶缓冲层上外延生长氮化物半导体层。 在该器件中，由AlxGayIn1-x-yN（0≤x≤1,0<= y <= 1和0 <= x + y <= 1）的单晶制成的单晶缓冲层（2） ），其中a轴和c轴对准，直接形成在与氮化物半导体晶格失配的衬底（1）上，并且氮化物半导体层（3）外延生长在 单晶。 单晶的缓冲层可以通过使用PLD法形成。

公开(公告)号：US20080187776A1

公开(公告)日：2008-08-07

申请号：US12026863

申请日：2008-02-06

申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Yoshio Nishimoto ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

IPC分类号： B32B15/00

CPC分类号： C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  Y10T428/12778

摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.

摘要翻译： 提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。 通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。 在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光 的增长。 结果，可以精确地测量温度。

公开(公告)号：US07292382B2

公开(公告)日：2007-11-06

申请号：US11346936

申请日：2006-02-03

申请人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

发明人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

IPC分类号： G02F1/03

CPC分类号： G11C13/042 ,  G02F1/055 ,  G02F2201/124 ,  G02F2203/12 ,  G09G3/346 ,  G09G2300/0857

摘要： A light control unit comprises: a substrate; an insulating film; a first transistor; a reflecting film formed on the insulating film; a light modulating film formed on the reflecting film; a plurality of pairs of electrodes arranged two-dimensionally on the light modulating film; and a polarizing plate formed on a first electrode. Here, the light modulating film is made of a material that varies in refractive index in accordance with the intensity of an electric field applied thereto. For such a material, PLZT containing Pb, Zr, Ti, and La as constituent elements may be used.

摘要翻译： 光控制单元包括：基板; 绝缘膜; 第一晶体管; 形成在绝缘膜上的反射膜; 形成在反射膜上的光调制膜; 在光调制膜上二维布置的多对电极; 以及形成在第一电极上的偏振片。 这里，光调制膜由根据施加到其上的电场强度的折射率变化的材料制成。 对于这种材料，可以使用含有Pb，Zr，Ti和La作为构成元素的PLZT。

公开(公告)号：US07196348B2

公开(公告)日：2007-03-27

申请号：US10763137

申请日：2004-01-21

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting in a not uniform flow of an electric current. It is an object of the present invention to provide a semiconductor light emitting device constituted by forming a transparent electrode, which facilitates acquiring an ohmic property, to be replaced by an ITO electrode film, at the light extracting or light exit side of the GaN system semiconductor light emitting device, so as to improve a light emission efficiency and a radiation extracting efficiency or a light exit efficiency of a GaN system semiconductor light emitting device. In order to accomplish the above mentioned object, the present invention provides a semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped MgzZn1-zO (0≦

摘要翻译： 虽然通过常规使用的ITO电极膜提供了发射光的高透光率，但是在ITO电极膜和ap型GaN系半导体层之间形成肖特基型接触，从而导致不均匀的流动 电流。 本发明的目的是提供一种半导体发光器件，其通过在GaN系统的光提取或光出射侧形成有助于获得由ITO电极膜代替的欧姆性的透明电极 以提高GaN系半导体发光元件的发光效率和放射线提取效率或光出射效率。 为了实现上述目的，本发明提供了一种半导体发光器件，其包括由n型GaN系半导体层和p型GaN系半导体层之间插入的由GaN系半导体构成的发光层， 其中提供Ga掺杂的Mg z Zn 1-z O（0 <= 1）电极膜。

公开(公告)号：US20060126360A1

公开(公告)日：2006-06-15

申请号：US11346936

申请日：2006-02-03

申请人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

发明人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

IPC分类号： F21V7/04

CPC分类号： G11C13/042 ,  G02F1/055 ,  G02F2201/124 ,  G02F2203/12 ,  G09G3/346 ,  G09G2300/0857

摘要： A light control unit comprises: a substrate; an insulating film; a first transistor; a reflecting film formed on the insulating film; a light modulating film formed on the reflecting film; a plurality of pairs of electrodes arranged two-dimensionally on the light modulating film; and a polarizing plate formed on a first electrode. Here, the light modulating film is made of a material that varies in refractive index in accordance with the intensity of an electric field applied thereto. For such a material, PLZT containing Pb, Zr, Ti, and La as constituent elements may be used.

摘要翻译： 光控制单元包括：基板; 绝缘膜; 第一晶体管; 形成在绝缘膜上的反射膜; 形成在反射膜上的光调制膜; 在光调制膜上二维布置的多对电极; 以及形成在第一电极上的偏振片。 这里，光调制膜由根据施加到其上的电场强度的折射率变化的材料制成。 对于这种材料，可以使用含有Pb，Zr，Ti和La作为构成元素的PLZT。