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公开(公告)号：US20120181531A1
公开(公告)日：2012-07-19
申请号：US12672432
申请日：2008-08-07
IPC分类号： H01L29/227 , H01L21/36
CPC分类号： C01G9/00 , C01G9/02 , C01P2002/50 , C01P2004/03 , C01P2006/20 , C01P2006/22 , C01P2006/40 , C01P2006/80 , C23C14/086 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/02414 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L33/28
摘要： A semiconductor element includes a semiconductor layer mainly composed of MgxZn1-xO (0
摘要翻译： 半导体元件包括主要由Mg x Zn 1-x O（0 <= x <1）组成的半导体层，其中包含在作为杂质的半导体层中的锰的密度不大于1×1016cm-3。
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2.发明申请SUBSTRATE TEMPERATURE MEASURING APPARATUS AND SUBSTRATE TEMPERATURE MEASURING METHOD 审中-公开基板温度测量装置和基板温度测量方法公开(公告)号：US20100183045A1
公开(公告)日：2010-07-22
申请号：US12452809
申请日：2008-07-22
IPC分类号： G01J5/00
CPC分类号： G01J5/08 , C23C14/08 , C23C14/086 , C23C14/541 , G01J5/0003 , G01J5/0007 , G01J5/0875 , G01J2005/0048 , G01J2005/0081 , H01L21/0242 , H01L21/02458 , H01L21/02554
摘要： A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window.
摘要翻译： 基板温度测量装置包括：加热基板的加热源; 透射窗，其透过红外线不能透过基板的波长范围内的红外线; 以及温度测量仪器，其具有包括波长范围的灵敏度范围，并且通过分析从由所述加热源加热并已透射通过透射窗的衬底辐射的红外线来测量衬底的衬底温度。
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公开(公告)号：US20080187776A1
公开(公告)日：2008-08-07
申请号：US12026863
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B32B15/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , Y10T428/12778
摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.
摘要翻译： 提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。 通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。 在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光 的增长。 结果，可以精确地测量温度。
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公开(公告)号：US20100323160A1
公开(公告)日：2010-12-23
申请号：US12526113
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
CPC分类号： H01L21/02554 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/0262 , Y10T428/24355 , Y10T428/2457 , Y10T428/24612
摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.
摘要翻译： 提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。 在图 如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。 如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系 层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。 当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构 形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。
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5.发明申请ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE 审中-公开基于ZnO的衬底，用于处理基于ZnO的衬底的方法和基于ZnO的半导体器件公开(公告)号：US20100308327A1
公开(公告)日：2010-12-09
申请号：US12865550
申请日：2009-01-30
摘要： Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate.
摘要翻译： 提供具有适合于晶体生长的高质量表面的ZnO基衬底，用于处理ZnO基衬底的方法和ZnO类半导体器件。 形成ZnO基基板，使得在晶体生长侧的主表面上基本上不存在羧基和碳酸酯基中的任何一个。 此外，为了基本上不存在羧基或碳酸酯基，在晶体生长开始之前，使氧自由基，氧等离子体和臭氧中的任一种与ZnO基基板的表面接触。 因此，提高了ZnO基板表面的清洁度，从而能够在基板上制造高质量的ZnO基薄膜。
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公开(公告)号：US20100289004A1
公开(公告)日：2010-11-18
申请号：US12664397
申请日：2008-06-13
CPC分类号： H01L29/7813 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02483 , H01L21/02507 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L29/155 , H01L29/225 , H01L33/04 , H01L33/06 , H01L33/28
摘要： Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.
摘要翻译： 提供了一种ZnO基薄膜和一种ZnO基半导体器件，其允许：减少制造装置的负担; 改善掺杂的可控性和再现性; 并获得p型导电而不改变晶体结构。 为了形成p型ZnO系薄膜，通过以MgZnO / ZnO超晶格层3的超晶格结构为基本结构，形成ZnO系薄膜。该超晶格部件形成为 层状结构，其包括受主掺杂的MgZnO层3b和受主掺杂的ZnO层3a。 因此，可以提高掺杂的可控性和再现性，并且可以防止由掺杂材料引起的晶体结构的变化。
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公开(公告)号：US20100270533A1
公开(公告)日：2010-10-28
申请号：US12733440
申请日：2008-09-05
CPC分类号： H01L33/16 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02609 , H01L33/0083 , H01L33/28
摘要： Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a MgxZn1-xO substrate (0≦x≦1) having such a principal surface that: a projection axis obtained by projecting a normal line to the principal surface onto a plane formed by an a-axis and a c-axis of substrate crystal axes is inclined towards the a-axis by an angle of φa degrees; a projection axis obtained by projecting the normal line to the principal surface onto a plane formed by an m-axis and the c-axis of the substrate crystal axes is inclined towards the m-axis by an angle of Φm degrees; the angle Φa satisfies 70≦{90−(180/π)arctan(tan(πΦa/180)/tan(πΦm/180))≦110; and the angle Φm≧1. Accordingly, a ZnO-based semiconductor layer formed on the principal surface can be easily converted into p-type because the donor impurities are prevented from mixing in and the self-compensation effect is alleviated. Thus, the desired ZnO-based semiconductor device can be fabricated.
摘要翻译： 提供了一种通过减轻自补偿效应并防止供体杂质混入，可以实现更容易地转换成p型的ZnO基半导体器件。ZnO基半导体器件包括Mg x Zn 1-x O衬底（0＆amp; nlE; x＆ 1）具有这样的主表面：使通过将主线垂直于基体晶轴的a轴和c轴所形成的平面投影到由a轴和c轴构成的平面而获得的投影轴向a轴倾斜一定角度 一度; 通过将由主体的法线投影到由m轴形成的平面和基板晶体轴的c轴而获得的投影轴朝向m轴倾斜Φm度的角度; 角度Φa满足70＆nlE; {90-（180 /＆pgr;）arctan（tan（＆pgr;Φa/ 180）/ tan（＆pgr;Φm/ 180））＆ 角度Φm≥1。 因此，由于防止供体杂质混入，因此能够容易地将形成在主面上的ZnO系半导体层变为p型，从而可以缓和自补偿效果。 因此，可以制造所需的ZnO基半导体器件。
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公开(公告)号：US20110114938A1
公开(公告)日：2011-05-19
申请号：US12735798
申请日：2009-02-20
申请人： Ken Nakahara , Kentaro Tamura , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Kentaro Tamura , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/12
摘要： Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element.
摘要翻译： 提供了一种ZnO基半导体器件，其中在形成包含由ZnO基半导体制成的受主掺杂层的层压体的情况下，可以通过防止受体 - 掺杂层或受体掺杂层之后的层，并且层中的晶体缺陷增加，而不降低受主元素的浓度。
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公开(公告)号：US20110037067A1
公开(公告)日：2011-02-17
申请号：US12734772
申请日：2008-11-20
IPC分类号： H01L29/22
CPC分类号： H01L29/045 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L29/22 , H01L29/221 , H01L29/868 , H01L33/28
摘要： Provided is a ZnO-based semiconductor device in which flat ZnO-based semiconductor layers can be grown on a MgZnO substrate having a laminate-side principal surface including a C-plane. With an MgxZn1-xO substrate (0≦x
摘要翻译： 提供一种其中可以在具有包括C面的层压体侧主表面的MgZnO基板上生长平坦的ZnO基半导体层的ZnO基半导体器件。 对于具有包括C面的主表面的Mg x Zn 1- x O衬底（0＆amp; nlE; x <1），主表面形成为使得在衬底的晶轴的c轴和通过突出 在由m轴和衬底的晶轴的c轴限定的平面上的主表面的法线可以在0 <Φm和nlE的范围内; 3。 在如此形成的主表面上，外延生长ZnO基半导体层2至5。 在ZnO基半导体层5上形成p电极8，在Mg x Zn 1-x O基板1的底面形成有n电极9.以这种方式，在Mg x Zn n-x O基板的表面上形成有台阶 同时在m轴方向上规则地布置。 由此，可以避免称为步骤聚束的现象，能够提高在基板1上形成的各半导体层的膜的平坦度。
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公开(公告)号：US20110033718A1
公开(公告)日：2011-02-10
申请号：US12450597
申请日：2008-04-02
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
CPC分类号： H01L21/02472 , C30B23/025 , C30B29/16 , H01L21/02403 , H01L21/02554 , H01L21/02579 , H01L21/02631 , Y10T428/31678
摘要： Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An MgxZn1-xO film (0≦x≦0.5) is formed on top of a substrate so as to have an acceptor concentration of a p-type dopant that is 5×1020 cm−3 or less. An acceptor concentration exceeding 5×1020 cm−3 results in the formation of a mixed crystal of the p-type impurities and the ZnO crystal as the base material. Accordingly, no high-quality ZnO-based thin film doped to be p-type can be obtained. This fact is testified by the change observed in the ZnO secondary ion intensity.
摘要翻译： 提供了掺杂有p型杂质并可用于各种器件的ZnO基薄膜。 在衬底的顶部形成Mg x Zn 1-x O膜（0＆amp; nlE; x＆lt; lE; 0.5），使其具有5×1020cm-3以下的p型掺杂剂的受主浓度。 受体浓度超过5×1020cm-3导致形成p型杂质和ZnO晶体的混合晶体作为基材。 因此，不能获得掺杂为p型的高品质ZnO基薄膜。 这个事实是通过在ZnO二次离子强度中观察到的变化来证明的。
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