公开(公告)号：US08283862B2

公开(公告)日：2012-10-09

申请号：US12905568

申请日：2010-10-15

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US20110170084A1

公开(公告)日：2011-07-14

申请号：US13069491

申请日：2011-03-23

申请人： Hideto Ohnuma ,  Masaharu Nagai

发明人： Hideto Ohnuma ,  Masaharu Nagai

IPC分类号： G03B27/72

CPC分类号： H01L27/1288 ,  G03F1/50 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621

摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

摘要翻译： 本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数） 通过使用曝光掩模来减少衬底。 使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和 材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

公开(公告)号：US07829432B2

公开(公告)日：2010-11-09

申请号：US12489594

申请日：2009-06-23

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US07465593B2

公开(公告)日：2008-12-16

申请号：US12007293

申请日：2008-01-09

申请人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

发明人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

摘要翻译： 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

公开(公告)号：US6020601A

公开(公告)日：2000-02-01

申请号：US189679

申请日：1998-11-13

申请人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

发明人： Hiroyasu Noguchi ,  Eisaku Kato ,  Masaharu Nagai

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06

摘要： A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0

摘要翻译： 提供了一种寿命长且可靠性更高的半导体发光器件，其在基板（1），由Zn x Mg y B e 1制成的第一导电型包覆层（3）和第二导电型包覆层（7） -x-ySZSe1-z（0

公开(公告)号：US08426945B2

公开(公告)日：2013-04-23

申请号：US13225752

申请日：2011-09-06

申请人： Masaharu Nagai ,  Takafumi Mizoguchi

发明人： Masaharu Nagai ,  Takafumi Mizoguchi

IPC分类号： H01L29/06

CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。

公开(公告)号：US08198173B2

公开(公告)日：2012-06-12

申请号：US12910320

申请日：2010-10-22

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US07875419B2

公开(公告)日：2011-01-25

申请号：US10694986

申请日：2003-10-29

申请人： Masaharu Nagai ,  Kiyofumi Ogino ,  Teruhisa Nakai ,  Eiji Shioda

发明人： Masaharu Nagai ,  Kiyofumi Ogino ,  Teruhisa Nakai ,  Eiji Shioda

IPC分类号： G03F7/42 ,  H01L21/027

CPC分类号： H01L27/1288 ,  G03F7/022 ,  G03F7/2024 ,  G03F7/425 ,  H01L21/31138 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621

摘要： It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.

摘要翻译： 本发明的目的是提供一种在使用非水性抗蚀剂剥离剂的情况下有利地除去抗蚀剂而不留下残留物的技术。 根据本发明，为了达到上述目的，通过使用非水性抗蚀剂剥离剂去除抗蚀剂图案，通过对抗蚀剂图案进行曝光处理，变得更容易在干蚀刻或离子掺杂之后去除抗蚀剂图案。 在由DNQ-酚醛清漆树脂型正性抗蚀剂组合物形成抗蚀剂图案之后，用DNQ光敏剂的感光波长范围内的光照射抗蚀剂图案，从而用非水性抗蚀剂剥离剂去除抗蚀剂图案。

公开(公告)号：US06414975B1

公开(公告)日：2002-07-02

申请号：US09048048

申请日：1998-03-26

申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

IPC分类号： H01S500

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

公开(公告)号：US08034674B2

公开(公告)日：2011-10-11

申请号：US12163227

申请日：2008-06-27

申请人： Masaharu Nagai ,  Takafumi Mizoguchi

发明人： Masaharu Nagai ,  Takafumi Mizoguchi

IPC分类号： H01L21/00

CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。