公开(公告)号：US20120228640A1

公开(公告)日：2012-09-13

申请号：US13512456

申请日：2011-07-14

申请人： Takeyoshi Masuda ,  Shin Harada ,  Misako Honaga ,  Keiji Wada ,  Toru Hiyoshi

发明人： Takeyoshi Masuda ,  Shin Harada ,  Misako Honaga ,  Keiji Wada ,  Toru Hiyoshi

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/66068 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/6606 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8613 ,  H01L29/868

摘要： There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate having a main surface; and a silicon carbide layer formed on the main surface of the substrate and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region.

摘要翻译： 提供了具有稳定特性的高质量半导体器件和制造这种半导体器件的方法。 半导体器件包括：具有主表面的衬底; 以及形成在所述基板的主表面上并且包括相对于所述主表面倾斜的侧表面的碳化硅层。 侧表面基本上包括{03-3-8}平面。 侧面包括通道区域。

公开(公告)号：US08198675B2

公开(公告)日：2012-06-12

申请号：US12515386

申请日：2007-11-16

申请人： Shin Harada ,  Takeyoshi Masuda

发明人： Shin Harada ,  Takeyoshi Masuda

IPC分类号： H01L29/161

CPC分类号： H01L29/7813 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02639 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. An extended terrace surface is formed at a surface of an initial growth layer on a 4H—SiC substrate by annealing with the initial growth layer covered with an Si film, and then a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion having a polytype stable at a low temperature is grown on the extended terrace surface, and a 4H—SiC portion is grown on the other region. A trench is formed by selectively removing the 3C—SiC portion with the 4H—SiC portion remaining, and a gate electrode of a UMOSFET is formed in the trench. A channel region of the UMOSFET can be controlled to have a low-order surface, and a silicon carbide semiconductor device having high channel mobility and excellent performance characteristics is obtained.

摘要翻译： 获得具有优异性能的碳化硅半导体器件及其制造方法。 通过用覆盖有Si膜的初始生长层退火，在4H-SiC衬底上的初始生长层的表面上形成延伸的台面表面，然后在初始生长层上外延生长新的生长层。 在延伸的台面上生长具有低温稳定性的3C-SiC部分，在其他区域生长4H-SiC部分。 通过选择性地除去具有4H-SiC部分的3C-SiC部分形成沟槽，并且在沟槽中形成UMOSFET的栅电极。 可以将UMOSFET的沟道区域控制为具有低阶表面，并且获得具有高沟道迁移率和优异性能特性的碳化硅半导体器件。

公开(公告)号：US20110186862A1

公开(公告)日：2011-08-04

申请号：US13063083

申请日：2009-02-03

申请人： Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Masato Tsumori

发明人： Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Masato Tsumori

IPC分类号： H01L29/24 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/3003 ,  H01L21/324 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/94

摘要： There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×1021 cm−3.

摘要翻译： 提供了具有优异的电特性如沟道迁移率的碳化硅半导体器件及其制造方法。 半导体器件包括相对于{0001}的表面取向具有大于或等于50°且小于或等于65°的偏角度的碳化硅制成的衬底，用作 半导体层和用作绝缘膜的氧化膜。 p型层形成在基板上，由碳化硅制成。 氧化膜形成为与p型层的表面接触。 半导体层与绝缘膜（沟道区域和氧化物膜之间的界面）的界面的10nm以内的区域的氮原子的浓度的最大值为1×1021cm-3以上。

公开(公告)号：US08803294B2

公开(公告)日：2014-08-12

申请号：US13529602

申请日：2012-06-21

申请人： Takeyoshi Masuda ,  Shin Harada ,  Keiji Wada ,  Toru Hiyoshi

发明人： Takeyoshi Masuda ,  Shin Harada ,  Keiji Wada ,  Toru Hiyoshi

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

摘要： A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.

摘要翻译： 衬底具有由具有多晶型4H的六方晶单晶结构的半导体制成的表面。 基板的表面通过交替地提供具有（0-33-8）的平面取向的第一平面和连接到第一平面并具有不同于第一平面的平面取向的平面取向的第二平面来构造。 栅极绝缘膜设置在基板的表面上。 在栅极绝缘膜上设置栅电极。

公开(公告)号：US20100314626A1

公开(公告)日：2010-12-16

申请号：US12515386

申请日：2007-11-16

申请人： Shin Harada ,  Takeyoshi Masuda

发明人： Shin Harada ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L29/7813 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02639 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. An extended terrace surface is formed at a surface of an initial growth layer on a 4H—SiC substrate by annealing with the initial growth layer covered with an Si film, and then a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion having a polytype stable at a low temperature is grown on the extended terrace surface, and a 4H—SiC portion is grown on the other region. A trench is formed by selectively removing the 3C—SiC portion with the 4H—SiC portion remaining, and a gate electrode of a UMOSFET is formed in the trench. A channel region of the UMOSFET can be controlled to have a low-order surface, and a silicon carbide semiconductor device having high channel mobility and excellent performance characteristics is obtained.

摘要翻译： 获得具有优异性能的碳化硅半导体器件及其制造方法。 通过用覆盖有Si膜的初始生长层退火，在4H-SiC衬底上的初始生长层的表面上形成延伸的台面表面，然后在初始生长层上外延生长新的生长层。 在延伸的台面上生长具有低温稳定性的3C-SiC部分，在其他区域生长4H-SiC部分。 通过选择性地除去具有4H-SiC部分的3C-SiC部分形成沟槽，并且在沟槽中形成UMOSFET的栅电极。 可以将UMOSFET的沟道区域控制为具有低阶表面，并且获得具有高沟道迁移率和优异性能特性的碳化硅半导体器件。

公开(公告)号：US08686434B2

公开(公告)日：2014-04-01

申请号：US13063083

申请日：2009-02-03

申请人： Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Masato Tsumori

发明人： Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Masato Tsumori

IPC分类号： H01L29/06

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/3003 ,  H01L21/324 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/94

摘要： There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×1021 cm−3.

摘要翻译： 提供了具有优异的电特性如沟道迁移率的碳化硅半导体器件及其制造方法。 半导体器件包括相对于{0001}的表面取向具有大于或等于50°且小于或等于65°的偏角度的碳化硅制成的衬底，用作 半导体层和用作绝缘膜的氧化膜。 p型层形成在基板上，由碳化硅制成。 氧化膜形成为与p型层的表面接触。 半导体层与绝缘膜（沟道区域和氧化物膜之间的界面）的界面的10nm以内的区域的氮原子的浓度的最大值为1×1021cm-3以上。

公开(公告)号：US08536583B2

公开(公告)日：2013-09-17

申请号：US13063298

申请日：2010-03-23

申请人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga

发明人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/94

摘要： A MOSFET includes: a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. The MOSFET has a sub-threshold slope of not more than 0.4 V/Decade.

摘要翻译： MOSFET包括：碳化硅（SiC）基板，其具有相对于{0001}面具有不小于50°且不大于65°的偏离角的主表面; 形成在所述SiC衬底的主表面上的半导体层; 以及与半导体层的表面接触形成的绝缘膜。 MOSFET的子阈值斜率不超过0.4 V /十年。

公开(公告)号：US20120171850A1

公开(公告)日：2012-07-05

申请号：US13394770

申请日：2010-08-24

申请人： Misako Honaga ,  Takeyoshi Masuda ,  Shin Harada

发明人： Misako Honaga ,  Takeyoshi Masuda ,  Shin Harada

IPC分类号： H01L21/311

CPC分类号： H01L29/7802 ,  H01L23/544 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes the steps of forming a semiconductor layer made of SiC on an SiC substrate, forming a film on the semiconductor layer, and forming a groove in the film. The semiconductor device including a chip having an interlayer insulating film includes a groove formed in the interlayer insulating film to cross the chip.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在SiC衬底上形成由SiC制成的半导体层，在半导体层上形成膜，并在膜中形成沟槽。 包括具有层间绝缘膜的芯片的半导体器件包括形成在层间绝缘膜中以跨越芯片的沟槽。

公开(公告)号：US08138504B2

公开(公告)日：2012-03-20

申请号：US12513554

申请日：2007-11-07

申请人： Shin Harada ,  Takeyoshi Masuda

发明人： Shin Harada ,  Takeyoshi Masuda

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02639 ,  H01L21/0445 ,  H01L21/049 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth layer on a 4H—SiC substrate, and an extended terrace surface is formed in a region covered with the coating film. Next, the coating film is removed, and a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion made of 3C—SiC crystals having a polytype stable at a low temperature is grown on the extended terrace surface of the initial growth layer. A channel region of a MOSFET or the like is provided in the 3C—SiC portion having a narrow band gap. As a result, the channel mobility is improved because of a reduction in an interface state, and a silicon carbide semiconductor device having excellent performance characteristics is obtained.

摘要翻译： 获得具有优异性能的碳化硅半导体器件及其制造方法。 在4H-SiC基板上的初始生长层上形成由Si制成的涂膜，并且在涂覆膜覆盖的区域中形成延伸的台阶表面。 接着，除去涂膜，在初始生长层上外延生长新的生长层。 在初始生长层的延伸平台表面上生长由低温下具有多型稳定性的3C-SiC晶体制成的3C-SiC部分。 在具有窄带隙的3C-SiC部分中提供MOSFET等的沟道区域。 结果，由于接口状态的降低，沟道迁移率得到改善，并且获得了具有优异性能的碳化硅半导体器件。

公开(公告)号：US20110233562A1

公开(公告)日：2011-09-29

申请号：US13131369

申请日：2010-04-06

申请人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

发明人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

IPC分类号： H01L29/161 ,  H01L21/20

CPC分类号： H01L29/7802 ,  B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B37/10 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/02 ,  H01L29/045 ,  H01L29/063 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/8611 ,  H01L29/872

摘要： A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate according to the present invention has a main surface having a diameter of 2 inches or greater, a value for bow at the main surface being not smaller than −40 μm and not greater than −5 μm, and a value for warp at the main surface being not smaller than 5 μm and not greater than 40 μm. Preferably, a value for surface roughness Ra of the main surface of the substrate is not greater than 1 nm and a value for surface roughness Ra of a main surface is not greater than 100 nm.

摘要翻译： 获得由于基板的弯曲，具有薄膜的基板和形成有上述基板的半导体器件导致的半导体器件的加工精度的抑制劣化的基板，以及上述制造半导体器件的方法。 根据本发明的基板具有直径为2英寸或更大的主表面，主表面上的弓形值不小于-40μm且不大于-5μm，并且在该表面处的翘曲值 主表面不小于5μm，不大于40μm。 优选地，基板的主表面的表面粗糙度Ra的值不大于1nm，并且主表面的表面粗糙度Ra的值不大于100nm。