公开(公告)号：US20110001421A1

公开(公告)日：2011-01-06

申请号：US12920011

申请日：2009-02-19

Applicant: Makoto Yamamoto ,  Keisuke Koga

Inventor： Makoto Yamamoto ,  Keisuke Koga

IPC: H01J1/30 ,  H01J1/62

CPC classification number: H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2329/4604 ,  H01J2329/4643

Abstract: A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.

Abstract translation: 矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。 通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8） 电子源元件（4）的对准间距。 因此，可以在不减小电子源尺寸的情况下提高分辨率。

公开(公告)号：US20070188091A1

公开(公告)日：2007-08-16

申请号：US11706939

申请日：2007-02-13

Applicant: Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

Inventor： Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

IPC: H01J1/62

CPC classification number: H01J1/46 ,  H01J3/021 ,  H01J29/467 ,  H01J31/123

Abstract: An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.

Abstract translation: 从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。 网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。 网状结构由掺杂有N型或P型材料的含硅材料形成。 以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

公开(公告)号：US20060066198A1

公开(公告)日：2006-03-30

申请号：US11230156

申请日：2005-09-19

Applicant: Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota

Inventor： Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota

IPC: H01J9/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J31/127

Abstract: An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.

Abstract translation: 电子源装置包括在Si衬底上以矩阵形式布置的多个电子发射部分，以及彼此正交的多条发射极线和多条栅极线，并且多个电子发射部分中的每一个被控制 通过来自多个发射极线和多个栅极线的信号进行独立的电子发射操作。 此外，设置在相应的多个发射极线周围的器件隔离区域，在相应的多个发射极线路中形成接触孔，在多个发射极线的外侧的区域中设置与多个发射极线对应的多个发射极线路安装电极 被连接到相应的多个发射极线路安装电极的导体经由接触孔连接到对应于多个发射极线路安装电极的各个发射极线。 因此，电子源装置可以实现高密度和尺寸减小。

公开(公告)号：US06914373B2

公开(公告)日：2005-07-05

申请号：US10185794

申请日：2002-06-27

Applicant: Takashi Itoh ,  Masahide Yamauchi ,  Koji Fujii ,  Keisuke Koga ,  Toru Kawase

Inventor： Takashi Itoh ,  Masahide Yamauchi ,  Koji Fujii ,  Keisuke Koga ,  Toru Kawase

IPC: H01J29/04 ,  H01J29/48 ,  H01J1/02 ,  H01J29/70

CPC classification number: H01J29/481

Abstract: A cathode ray tube according to the present invention include a cold cathode electron gun, the cold cathode electron gun including a cold cathode array for emitting electrons through field emission, a gate electrode for controlling the field emission, a first selective electrode provided around the cold cathode array and the gate electrode, and a second selective electrode opposing the first selective electrode, and the second selective electrode is adapted to have a lower potential than the gate electrode and the first selective electrode. In accordance with this configuration, the divergence of electron beams emitted from any positions in the cold cathode array can be converged uniformly upon removing electron beams emitted at a great emission angle. This allows the electron beams thereafter to be made narrower by an electrostatic lens. As a result, the present invention can provide a cathode ray tube capable of forming a high-resolution image.

Abstract translation: 根据本发明的阴极射线管包括冷阴极电子枪，冷阴极电子枪包括用于通过场发射发射电子的冷阴极阵列，用于控制场致发射的栅电极，围绕冷端设置的第一选择电极 阴极阵列和栅电极以及与第一选择电极相对的第二选择电极，并且第二选择电极适于具有比栅电极和第一选择电极低的电位。 根据这种结构，从冷阴极阵列中的任何位置发射的电子束的发散度可以均匀地会聚在去除以大的发射角发射的电子束。 这样可以使静电透镜之后的电子束变窄。 结果，本发明可以提供能够形成高分辨率图像的阴极射线管。

公开(公告)号：US06812654B2

公开(公告)日：2004-11-02

申请号：US10399738

申请日：2003-09-02

Applicant: Keisuke Koga ,  Toru Kawase

Inventor： Keisuke Koga ,  Toru Kawase

IPC: G09G104

CPC classification number: H01J29/481 ,  H01J1/3042

Abstract: The object of the present invention is to provide a field emission device that emits an electron beam bundle whose spot profile on a display screen has as little distortion as possible, and that maintains a stable electron emission property regardless of the length of a driving time, a CRT apparatus equipped with such field emission device, and a production method of such CRT apparatus. The field emission device (10) has, on a surface of a substrate (11), a plurality of cathode electrodes (12) parallel to each other, an insulation layer (13), and a plurality of extraction electrodes (14) parallel to each other, in the stated order, the cathode electrodes (12) and the extraction electrodes (14) being orthogonal to each other and so yielding a plurality of crossover regions. At the crossover regions, electron emission zones (15) each made up of four emitters (16) are formed. One or more of the electron emission zones (15) are selected by controlling the applied voltage between the cathode electrodes (12) and the extraction electrodes (14), according to an area of the display screen to be irradiated with the electron beam bundle.

Abstract translation: 本发明的目的是提供一种发射电子束束的场致发射器件，其中显示屏上的光斑轮廓具有尽可能小的失真，并且保持稳定的电子发射特性，而与驱动时间的长度无关， 配备有这种场发射装置的CRT装置以及这种CRT装置的制造方法。场发射装置（10）在基板（11）的表面上具有彼此平行的多个阴极电极（12） ，绝缘层（13）和多个彼此平行的提取电极（14），所述阴极电极（12）和提取电极（14）按顺序相互正交，从而产生多个 在交叉区域中，形成由四个发射体（16）构成的电子发射区（15）。 根据要用电子束束照射的显示屏的面积，通过控制阴极电极（12）和提取电极（14）之间的施加电压来选择一个或多个电子发射区（15）。

公开(公告)号：US5925891A

公开(公告)日：1999-07-20

申请号：US833191

申请日：1997-04-14

Applicant: Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

Inventor： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

IPC: H01J9/02 ,  H01L29/06 ,  H01J1/16 ,  H01J19/10

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract translation: 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：US4948238A

公开(公告)日：1990-08-14

申请号：US321683

申请日：1989-03-10

Applicant: Nobuhiro Araki ,  Takeo Sato ,  Koichi Kawata ,  Noboru Nomura ,  Keisuke Koga

Inventor： Nobuhiro Araki ,  Takeo Sato ,  Koichi Kawata ,  Noboru Nomura ,  Keisuke Koga

IPC: G02B13/00 ,  G02B13/18 ,  G02B13/24

CPC classification number: G02B13/18 ,  G02B13/00 ,  G02B13/24

Abstract: A first lens, a second lens, means and a third lens means are arranged successively in a direction of travel of a ray. The first lens means each comprising a single lens element power. The second lens means has a predetermined negative refracting power. The third lens means has a predetermined positive refracting power. A fourth lens means consisting of a plurality of lens elements follows the third lens means in the direction of travel of the ray and has a predetermined positive refracting power. At least one surface of the first, second, third, and fourth lens elements is aspherical. The follwoing conditions (1), (2), and (3) are satisfied:4f

公开(公告)号：US08384281B2

公开(公告)日：2013-02-26

申请号：US12991005

申请日：2009-04-27

Applicant: Makoto Yamamoto ,  Keisuke Koga

Inventor： Makoto Yamamoto ,  Keisuke Koga

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/46

CPC classification number: H01J3/022 ,  H01J1/3044 ,  H01J29/04 ,  H01J29/467 ,  H01J29/481 ,  H01J2203/0212 ,  H01J2329/4608

Abstract: A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

Abstract translation: 矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。 栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。

公开(公告)号：US20110192580A1

公开(公告)日：2011-08-11

申请号：US13123268

申请日：2009-10-16

Applicant: Keisuke Tsuji ,  Mutsuhiko Matsumoto ,  Nobuyuki Yasui ,  Hiroshi Shibata ,  Naoyuki Funada ,  Yuuji Nakano ,  Takahiro Sahashi ,  Keisuke Hagimoto ,  Hirotaka Soga ,  Keisuke Koga

Inventor： Keisuke Tsuji ,  Mutsuhiko Matsumoto ,  Nobuyuki Yasui ,  Hiroshi Shibata ,  Naoyuki Funada ,  Yuuji Nakano ,  Takahiro Sahashi ,  Keisuke Hagimoto ,  Hirotaka Soga ,  Keisuke Koga

IPC: F28F13/00

CPC classification number: H05K7/206 ,  F24F12/006 ,  F24F13/082 ,  F24F13/20 ,  F24F2221/52 ,  Y02B30/16 ,  Y02B30/563

Abstract: The invention is provided with main body case (4) containing therein an air blower for circulating ambient air and a heat exchanger for exchanging heat between the ambient air circulated by the air blower and inside air, flange (13) provided in main body case (4) and having wall surface joining surface (13b) joined to wall surface (2a) where main body case (4) is arranged, and cover (12) attached to flange (13), having a louver in a side of the inside air, and a plurality of opening holes in a side of the ambient air and covering the ambient air side of main body case (4), thereby making an attachment and a detachment of cover (12) easy, and achieving a reduction of a maintenance work.

Abstract translation: 本发明提供一种主体壳体（4），其中容纳有用于循环环境空气的鼓风机和用于在由鼓风机和内部空气循环的环境空气之间进行热交换的热交换器，设置在主体壳体中的凸缘（13） 4），并且具有连接到主体壳体（4）的壁表面（2a）的壁表面接合表面（13b），以及附接到凸缘（13）的盖子（12），在内部空气侧具有百叶窗 ，以及在周围空气侧的多个开孔，并且覆盖主体壳体（4）的环境空气侧，从而容易地使盖（12）的安装和拆卸，并且实现了维护工作的减少 。

公开(公告)号：US20070184747A1

公开(公告)日：2007-08-09

申请号：US11729442

申请日：2007-03-29

Applicant: Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J9/00

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Abstract translation: 提供即使在长时间的高电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在每个发射电子的阴极的表面上的表面改性层，包括构成阴极的阴极材料和不同于阴极材料的材料之间的化学键。