公开(公告)号：US5897790A

公开(公告)日：1999-04-27

申请号：US995839

申请日：1997-12-22

申请人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

发明人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

IPC分类号： H01J9/02 ,  B44C1/22

CPC分类号： H01J9/025 ,  H01J2201/30426

摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

摘要翻译： 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：US5925891A

公开(公告)日：1999-07-20

申请号：US833191

申请日：1997-04-14

申请人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

发明人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

IPC分类号： H01J9/02 ,  H01L29/06 ,  H01J1/16 ,  H01J19/10

CPC分类号： H01J9/025 ,  H01J2201/30426

摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

摘要翻译： 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：US5494179A

公开(公告)日：1996-02-27

申请号：US275354

申请日：1994-07-15

申请人： Yoshikazu Hori ,  Keisuke Koga

发明人： Yoshikazu Hori ,  Keisuke Koga

IPC分类号： H01J1/304 ,  H01J9/02 ,  B44C1/22

CPC分类号： H01J1/3042 ,  H01J9/025 ,  H01J2201/319

摘要： The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.

摘要翻译： 本发明是一种场发射元件，其具有具有尖锐顶点的阴极和具有小于1μm的孔径的栅极，其通过用硅氧化物层覆盖硅衬底制成，形成1.0μm直径的蚀刻掩模 通过光刻从氧化硅层湿式蚀刻蚀刻掩模以形成较小直径的微小蚀刻掩模，干蚀刻基板以形成圆柱形固体结构，随后进行各向异性蚀刻以形成面对的微小锥形结构 彼此连接并通过其各自的顶部连接，在微小结构周围蒸发真空绝缘层，并在其上形成用作栅电极的导电层，并且蚀刻微小结构以剥离微小锥形结构的上部。

公开(公告)号：US08713959B2

公开(公告)日：2014-05-06

申请号：US13511458

申请日：2010-11-19

申请人： Yuuji Nakano ,  Hiroshi Shibata ,  Keisuke Koga ,  Mutsuhiko Matsumoto ,  Keisuke Tsuji

发明人： Yuuji Nakano ,  Hiroshi Shibata ,  Keisuke Koga ,  Mutsuhiko Matsumoto ,  Keisuke Tsuji

IPC分类号： F25D17/00

CPC分类号： H05K7/20681 ,  F28D15/0266

摘要： A heat generating body box housing refrigeration device includes a first refrigerant cycle in which a first condenser and a first evaporator are connected by a first refrigerant liquid pipe and a first refrigerant steam pipe and a second refrigerant cycle in which a second condenser and a second evaporator are connected by a second refrigerant liquid pipe and a second refrigerant steam pipe. The first refrigerant liquid pipe is connected between a first joint and a second joint, the first refrigerant steam pipe is connected between a third joint and a fourth joint, the second refrigerant liquid pipe is connected between a fifth joint and a sixth joint, and the second refrigerant steam pipe is connected between a seventh joint and an eighth joint.

摘要翻译： 发热体箱体的制冷装置包括：第一制冷剂循环，其中第一冷凝器和第一蒸发器通过第一制冷剂液体管和第一制冷剂蒸汽管和第二制冷剂循环连接，其中第二冷凝器和第二蒸发器 通过第二制冷剂液体管道和第二制冷剂蒸汽管道连接。 第一制冷剂液体管连接在第一接头和第二接头之间，第一制冷剂蒸汽管连接在第三接头和第四接头之间，第二制冷剂液体管连接在第五接头和第六接头之间， 第二制冷剂蒸汽管连接在第七关节和第八关节之间。

公开(公告)号：US07825591B2

公开(公告)日：2010-11-02

申请号：US11706939

申请日：2007-02-13

申请人： Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

发明人： Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

IPC分类号： H05H7/00

CPC分类号： H01J1/46 ,  H01J3/021 ,  H01J29/467 ,  H01J31/123

摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.

摘要翻译： 从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。 网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。 网状结构由掺杂有N型或P型材料的含硅材料形成。 以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

公开(公告)号：US07588475B2

公开(公告)日：2009-09-15

申请号：US11729442

申请日：2007-03-29

申请人： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

发明人： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC分类号： H01J9/00

CPC分类号： H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

摘要： A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

摘要翻译： 提供即使在长时间的大电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层，包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。

公开(公告)号：US06692327B1

公开(公告)日：2004-02-17

申请号：US09480415

申请日：2000-01-11

申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC分类号： H01J902

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30446

摘要： An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.

摘要翻译： 电子发射元件包括基板，形成在基板上的阴极电极，与阴极相对设置的阳极电极，设置在阴极电极上的电子发射部件，设置在阴极电极和阴极电极之间的控制电极， 阳极电极和绝缘层。 电子发射构件包括具有孔的第一构件和填充孔的第二构件，其中第二构件比第一构件更可能发射电子。

公开(公告)号：US20110057555A1

公开(公告)日：2011-03-10

申请号：US12991005

申请日：2009-04-27

申请人： Makoto Yamamoto ,  Keisuke Koga

发明人： Makoto Yamamoto ,  Keisuke Koga

IPC分类号： H01J1/00

CPC分类号： H01J3/022 ,  H01J1/3044 ,  H01J29/04 ,  H01J29/467 ,  H01J29/481 ,  H01J2203/0212 ,  H01J2329/4608

摘要： A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

摘要翻译： 矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。 栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。

公开(公告)号：US07365481B2

公开(公告)日：2008-04-29

申请号：US10316374

申请日：2002-12-10

申请人： Toru Kawase ,  Keisuke Koga

发明人： Toru Kawase ,  Keisuke Koga

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J1/30 ,  H01J2201/304

摘要： A field emission device having cold cathode devices including an emitter and a lead electrode, and the field emission device is provided with the plural kinds of cold cathode device groups classified based on the emission property of the cold cathode device. This field emission device has a member for allowing the cold cathode device group to perform emission by successively changing the cold cathode device group that mainly performs emission based on the difference in the emission property. Thus, it is possible to maintain the emission current at a predetermined necessary value or more and to realize the long lifetime of the field emission device.

摘要翻译： 具有包括发射极和引线电极的冷阴极器件的场致发射器件，场发射器件具有基于冷阴极器件的发射特性分类的多种冷阴极器件组。 该场致发射装置具有使冷阴极器件组通过依照发光特性的差异依次变更主要进行发光的冷阴极器件组来进行发光的部件。 因此，可以将发射电流保持在预定的必要值以上，并且实现场发射装置的长寿命。

公开(公告)号：US20070188075A1

公开(公告)日：2007-08-16

申请号：US11706532

申请日：2007-02-13

申请人： Junichi Kimiya ,  Keisuke Koga

发明人： Junichi Kimiya ,  Keisuke Koga

IPC分类号： H01J63/04 ,  H01J1/62

CPC分类号： H01J7/18 ,  H01J1/46 ,  H01J29/467

摘要： A field-emission electron source apparatus includes a vacuum container that receives a field-emission electron source array, a target and an auxiliary electrode, and a getter pump that is disposed in the vacuum container and absorbs and removes excess gas. An electron beam emitted from the field-emission electron source array passes through a plurality of through holes formed in the auxiliary electrode and reaches the target. A space containing the field-emission electron source array and a space containing the target and the getter pump are separated substantially by the auxiliary electrode so that gas generated from the target is absorbed by the getter pump without passing through the space containing the field-emission electron source array. This makes it possible to provide a highly-reliable field-emission electron source apparatus in which the influence of gas and ions on the field-emission electron source array is eliminated or reduced.

摘要翻译： 场发射电子源装置包括：接收场发射电子源阵列的真空容器，靶和辅助电极;以及设置在真空容器中并吸收和去除过量气体的吸气泵。 从场致发射电子源阵列发射的电子束通过形成在辅助电极中的多个通孔并到达靶。 包含场致发射电子源阵列的空间和包含靶和吸气泵的空间基本上由辅助电极分离，使得由靶产生的气体被吸气泵吸收而不通过包含场致发射的空间 电子源阵列。 这使得可以提供一种高可靠性的场致发射电子源装置，其中消除或减少了气体和离子对场发射电子源阵列的影响。