公开(公告)号：US5642084A

公开(公告)日：1997-06-24

申请号：US259568

申请日：1994-06-14

申请人： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

发明人： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

IPC分类号： H01P1/205 ,  H01P1/201

CPC分类号： H01P1/2056 ,  Y10T29/49016

摘要： A dielectric block having an external conductor on the outer surface and a plurality of holes with internal conductors formed therein; no internal conductors are provided near one end of each of the plurality of holes. Portions of the dielectric block and the external conductor are removed so as to obtain a dielectric resonator having desired resonator characteristics. In another embodiment, portions of the dielectric block are removed so as to bring the external conductor closer to the internal conductors thereby obtaining a dielectric resonator resonant with a desired frequency. The dielectric resonators limit leakage of electromagnetic field and do not require additional parts such as terminals and case.

摘要翻译： 在外表面具有外部导体的介质块和形成有内部导体的多个孔; 在多个孔的每一个的一端附近没有设置内部导体。 去除介质块和外部导体的一部分，以获得具有期望的谐振器特性的介质谐振器。 在另一个实施例中，介电块的部分被去除，以便使外部导体更靠近内部导体，从而获得谐振的期望频率的介质谐振器。 介质谐振器限制电磁场的泄漏，不需要额外的部件，如端子和外壳。

公开(公告)号：US08519501B2

公开(公告)日：2013-08-27

申请号：US13477128

申请日：2012-05-22

申请人： Hitoshi Tada ,  Yasuo Nakajima ,  Yasuhiro Kunitsugu

发明人： Hitoshi Tada ,  Yasuo Nakajima ,  Yasuhiro Kunitsugu

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  H01L31/035281 ,  H01L31/105 ,  Y02E10/50

摘要： A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.

摘要翻译： 背面入射半导体光元件包括：第一导电类型的半导体衬底; 半导体衬底上的第一导电类型的第一半导体层; 在第一半导体层上的光吸收层; 在所述光吸收层上的第二半导体层; 以及在第二半导体层的一部分中具有第二导电类型的杂质扩散区。 包括第一半导体层和杂质扩散区之间并延伸穿过光吸收层的p-n结的区域是检测入射在半导体衬底的背面上的光的光检测部分。 半导体衬底的后表面中的凹槽围绕光检测部分，如在平面图中所示。

公开(公告)号：US20120206217A1

公开(公告)日：2012-08-16

申请号：US13368485

申请日：2012-02-08

申请人： Takahiro Okada ,  Hideki Tsukamoto ,  Hitoshi Tada

发明人： Takahiro Okada ,  Hideki Tsukamoto ,  Hitoshi Tada

IPC分类号： H01P1/205

CPC分类号： H01P1/2056

摘要： A band-elimination filter (BEF) that includes a coaxial dielectric resonator block, a substrate, and first, second, and third inductance elements. The coaxial dielectric resonator block includes inner conductors and an outer conductor, and forms coaxial dielectric resonators. The first inductance element is between a signal transmission path connected to one of the coaxial dielectric resonators via a series resonant capacitor and a signal transmission path connected to the other one of the coaxial dielectric resonators via a series resonant capacitor. The second inductance element is between one end of the first inductance element and the ground, and the third inductance elements is between the other end of the first inductance element and the ground.

摘要翻译： 一种带除滤波器（BEF），其包括同轴介质谐振器块，衬底以及第一，第二和第三电感元件。 同轴介质谐振器块包括内导体和外导体，并形成同轴介质谐振器。 第一电感元件在经由串联谐振电容器连接到一个同轴介质谐振器的信号传输路径和经由串联谐振电容器连接到另一个同轴介质谐振器的信号传输路径之间。 第二电感元件位于第一电感元件的一端和地之间，第三电感元件位于第一电感元件的另一端与地之间。

公开(公告)号：US07390683B2

公开(公告)日：2008-06-24

申请号：US11375016

申请日：2006-03-15

申请人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

发明人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC分类号： H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

摘要： A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

摘要翻译： 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US20050141800A1

公开(公告)日：2005-06-30

申请号：US11012278

申请日：2004-12-16

申请人： Yasunori Miyazaki ,  Hitoshi Tada ,  Yoshihiko Hanamaki

发明人： Yasunori Miyazaki ,  Hitoshi Tada ,  Yoshihiko Hanamaki

IPC分类号： G02F1/025 ,  G02F1/01

CPC分类号： G02F1/025

摘要： A waveguide semiconductor optical device has a pin junction on a semi-insulating substrate. The pin junction consists of an n-type cladding layer, an i-type absorption layer, and a p-type cladding layer. The waveguide semiconductor optical device includes a dopant impurity concentration not higher than 1016 cm-3 in the i-type absorption layer.

摘要翻译： 波导半导体光学器件在半绝缘衬底上具有pin结。 pin结由n型包覆层，i型吸收层和p型覆层组成。 该波导半导体光学器件包括在i型吸收层中不高于10 16 cm -3的掺杂剂杂质浓度。

公开(公告)号：US06798552B2

公开(公告)日：2004-09-28

申请号：US10197559

申请日：2002-07-18

申请人： Hitoshi Tada

发明人： Hitoshi Tada

IPC分类号： G02F103

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/066 ,  G02F2201/07

摘要： A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.

摘要翻译： 在MQW吸收层和p-InP覆盖层之间提供具有比MQW（多量子阱）吸收层的带隙能量大的带隙能量并且小于p-InP覆盖层的带隙能量的带间断层， 。 此外，在MQW吸收层和n-InP覆盖层之间设置有具有比MQW吸收层的带隙能量大的带隙能量并且小于n-InP覆盖层的带隙能量减少层。 因此，随着载流子的堆积被抑制，可以获得具有增强的响应速度的半导体光调制器。

公开(公告)号：US06384955B2

公开(公告)日：2002-05-07

申请号：US09839120

申请日：2001-04-23

申请人： Hitoshi Tada ,  Tomoko Kadowaki

发明人： Hitoshi Tada ,  Tomoko Kadowaki

IPC分类号： G02F103

CPC分类号： G02F1/025 ,  G02F2201/066 ,  G02F2201/122

摘要： A light modulator includes a semiconductor substrate having a main surface, a rear surface, and a grounding conductor on the rear surface. A wave guide section having a width is located on the semiconductor substrate. A bonding pad section on the semiconductor substrate is located adjacent to the wave guide section and an insulating layer covers the main surface of the semiconductor substrate. A portion of the insulating layer immediately opposite the bonding pad section includes a multiple layer structure of insulating films. An electrode opposite the bonding pad section is electrically connected to the wave guide section.

摘要翻译： 光调制器包括在后表面上具有主表面，后表面和接地导体的半导体衬底。 具有宽度的波导部分位于半导体衬底上。 半导体衬底上的接合焊盘部分位于波导部分附近，并且绝缘层覆盖半导体衬底的主表面。 与接合焊盘部分相对的绝缘层的一部分包括绝缘膜的多层结构。 与接合焊盘部分相对的电极电连接到波导部分。

公开(公告)号：US6078230A

公开(公告)日：2000-06-20

申请号：US843433

申请日：1997-04-15

申请人： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

发明人： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

IPC分类号： H01P1/205 ,  H01P1/201 ,  H01P11/00

CPC分类号： H01P1/2056 ,  Y10T29/49016

摘要： A method of adjusting characteristics of a dielectric filter having integral electromagnetic shielding, the dielectric filter comprises a dielectric body having an outer surface including first and second end surfaces and side surfaces extending between the first and second end surfaces; an external conductor disposed on the outer surface of the dielectric body and providing integral electromagnetic shielding of the dielectric filter; at least one hole extending through the dielectric body between the first and second end surfaces; a respective pair of internal conductors provided in the at least one hole and conductively connected to the external conductor at respective ends of the hole, a respective non-conductive portion in the hole being spaced from both ends and thereby separating the pair of internal conductors and defining a respective capacitance between the pair of internal conductors; and signal input and output electrodes provided on the outer surface of the dielectric body and electrically isolated from the external conductor. According to the method, a portion of the dielectric material is removed, for example by grinding, to form the respective non-conductive portion in the hole. The hole may have a changing diameter along its length, due to a hollow formed in one end surface, the non-conductive portion being adjacent to the hollow; or due to a narrowed throttle portion formed at or near the end surface, the non-conductive portion being formed on the throttle portion. Alternatively, the hole may have a substantially constant cross-section, and the non-conductive portion may be substantially flush with the inner surface of the hole. The dielectric body may be regular in shape or may have a side surface with portions spaced from the resonator hole by different respective distances.

摘要翻译： 一种调节具有整体电磁屏蔽的介质滤波器的特性的方法，所述介质滤波器包括具有包括第一和第二端面以及在所述第一和第二端面之间延伸的侧表面的外表面的电介质体; 设置在电介质体的外表面上并提供介质滤波器的整体电磁屏蔽的外部导体; 至少一个孔延伸穿过第一和第二端面之间的电介质体; 设置在所述至少一个孔中的相应的一对内部导体，并且在所述孔的相应端处导电地连接到所述外部导体，所述孔中的相应的非导电部分与两端间隔开，从而将所述一对内部导体和 限定所述一对内部导体之间的相应电容; 以及设置在电介质体的外表面上并与外部导体电隔离的信号输入和输出电极。 根据该方法，例如通过研磨去除介电材料的一部分，以在孔中形成相应的非导电部分。 由于在一个端面形成的中空孔，孔的长度可以具有变化的直径，非导电部分与中空部相邻; 或者由于形成在端面处或附近的节流部分变窄，所以非导电部分形成在节流部分上。 或者，孔可以具有基本上恒定的横截面，并且非导电部分可以与孔的内表面基本上齐平。 电介质体的形状可以是规则的，也可以具有不同的距离的与谐振器孔隔开的侧面。

公开(公告)号：US6054910A

公开(公告)日：2000-04-25

申请号：US260271

申请日：1999-03-02

申请人： Hitoshi Tada ,  Hiromi Ogura

发明人： Hitoshi Tada ,  Hiromi Ogura

IPC分类号： H01P1/205 ,  H01P7/04 ,  H01P1/202

CPC分类号： H01P1/2056

摘要： A dielectric filter comprising: a dielectric block including a first elongated sub-block and a second elongated sub-block each having a corresponding pair of longitudinally opposing end faces, and an outer surface, said sub-blocks being disposed adjacent one another; a first longitudinally extending through-hole disposed between the first pair of longitudinally opposing end faces of said first sub-block, the first through-hole having two outer ends and an inner surface; a first inner conductor formed on the inner surface of said first through-hole, said first inner conductor having outer ends; an outer conductor formed on the outer surface of said dielectric block but not electrically coupled to the outer ends of the first inner conductor such that the outer ends of the first inner conductor are open-circuited; a first connection conductor through which a predetermined part of the first inner conductor between its outer ends is connected to said outer conductor; a second longitudinally extending through-hole disposed between the second pair of longitudinally opposing end faces of said second sub-block, the second through-hole having two outer ends and an inner surface; a second inner conductor formed on the inner surface of said second through-hole, said second inner conductor being electrically connected to said outer conductor at its outer ends such that they are short-circuited, said inner conductor having a pair of open-circuited inner ends disposed at a predetermined location between its two outer ends, wherein said first and second sub-blocks of said dielectric block are longitudinally shifted relative to one another.

摘要翻译： 一种介质滤波器，包括：介质块，包括第一细长子块和第二细长子块，每个子块具有相应的一对纵向相对的端面和外表面，所述子块彼此相邻布置; 第一纵向延伸通孔，设置在所述第一子块的所述第一对纵向相对端面之间，所述第一通孔具有两个外端和内表面; 形成在所述第一通孔的内表面上的第一内导体，所述第一内导体具有外端; 形成在所述介质块的外表面上但不电耦合到所述第一内导体的外端的外导体，使得所述第一内导体的外端开放; 第一连接导体，其外端之间的第一内导体的预定部分通过该第一连接导体连接到所述外导体; 第二纵向延伸的通孔，设置在所述第二子块的所述第二对纵向相对端面之间，所述第二通孔具有两个外端和内表面; 形成在所述第二通孔的内表面上的第二内部导体，所述第二内部导体在其外端电连接到所述外部导体，使得它们被短路，所述内部导体具有一对开路的内部导体 端部设置在其两个外端之间的预定位置处，其中所述介质块的所述第一和第二子块相对于彼此纵向移位。

公开(公告)号：US5912603A

公开(公告)日：1999-06-15

申请号：US761984

申请日：1996-12-11

申请人： Hitoshi Tada ,  Hiromi Ogura

发明人： Hitoshi Tada ,  Hiromi Ogura

IPC分类号： H01P1/205 ,  H01P7/04

CPC分类号： H01P1/2056

摘要： A dielectric filter includes: a dielectric block having a pair of opposing end faces; a through-hole formed between the pair of opposing end faces of the dielectric block; an inner conductor formed on the inner surface of the through-hole, the inner conductor being open-circuited at both its ends; an outer conductor formed on the outer surface of the dielectric block; and a connection conductor by which a central part of the inner conductor between its two opposing ends is connected to the outer conductor. Although the dielectric filter is composed of the single dielectric block, it behaves as a band-elimination filter having pass-bands around the elimination-band centered at a trap frequency wherein elimination occurs at both edges of the pass-bands.

摘要翻译： 介质滤波器包括：介质块，具有一对相对的端面; 形成在介电块的一对相对端面之间的通孔; 形成在所述通孔的内表面上的内导体，所述内导体在其两端开放; 形成在介质块的外表面上的外部导体; 以及连接导体，通过该连接导体，其两个相对端之间的内部导体的中心部分连接到外部导体。 虽然介质滤波器由单个介质块组成，但其作为带通滤波器，其作用是以在陷波频率为中心的消除频带周围具有通带，其中消除发生在通带的两个边缘处。