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公开(公告)号：US06384955B2
公开(公告)日：2002-05-07
申请号：US09839120
申请日：2001-04-23
申请人： Hitoshi Tada , Tomoko Kadowaki
发明人： Hitoshi Tada , Tomoko Kadowaki
IPC分类号： G02F103
CPC分类号： G02F1/025 , G02F2201/066 , G02F2201/122
摘要： A light modulator includes a semiconductor substrate having a main surface, a rear surface, and a grounding conductor on the rear surface. A wave guide section having a width is located on the semiconductor substrate. A bonding pad section on the semiconductor substrate is located adjacent to the wave guide section and an insulating layer covers the main surface of the semiconductor substrate. A portion of the insulating layer immediately opposite the bonding pad section includes a multiple layer structure of insulating films. An electrode opposite the bonding pad section is electrically connected to the wave guide section.
摘要翻译： 光调制器包括在后表面上具有主表面，后表面和接地导体的半导体衬底。 具有宽度的波导部分位于半导体衬底上。 半导体衬底上的接合焊盘部分位于波导部分附近，并且绝缘层覆盖半导体衬底的主表面。 与接合焊盘部分相对的绝缘层的一部分包括绝缘膜的多层结构。 与接合焊盘部分相对的电极电连接到波导部分。
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公开(公告)号：US06282009B1
公开(公告)日：2001-08-28
申请号：US09245838
申请日：1999-02-08
申请人： Hitoshi Tada , Tomoko Kadowaki
发明人： Hitoshi Tada , Tomoko Kadowaki
IPC分类号： G02F103
CPC分类号： G02F1/025 , G02F2201/066 , G02F2201/122
摘要： A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section. After a mask has been formed on a portion of the primary insulating film opposite the bonding pad section, the remaining portion of the primary insulating film is etched, followed by removal of the mask. After the removal of the mask, a second insulating film is formed continuously covering the primary insulating film opposite the bonding pad section and the mesa section so that a relatively thick insulating layer is present only opposite the bonding pad section.
摘要翻译： 具有降低的寄生静电电容的光调制器包括具有台面部分和接合焊盘部分的半导体衬底。 基板上的主绝缘膜连续地覆盖台面部分和接合焊盘部分。 在与绝缘焊盘部分相对的一次绝缘膜的一部分上形成掩模之后，蚀刻一次绝缘膜的剩余部分，然后除去掩模。 在去除掩模之后，形成连续地覆盖与接合焊盘部分和台面部分相对的主绝缘膜的第二绝缘膜，使得相对较厚的绝缘层仅与接合焊盘部分相对。
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公开(公告)号：US20060018358A1
公开(公告)日：2006-01-26
申请号：US11144772
申请日：2005-06-06
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译： 半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。 电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。 由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。
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公开(公告)号：US5146467A
公开(公告)日：1992-09-08
申请号：US734450
申请日：1991-07-23
申请人： Tomoko Kadowaki , Takashi Murakami
发明人： Tomoko Kadowaki , Takashi Murakami
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2207 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device producing visible light includes a double heterojunction structure having a first conductivity type lower cladding layer, an active layer and a second conductivity type upper cladding layer, formed in a first epitaxial growth process of AlGaInP series materials and a contact layer formed in a second or later epitaxial growth process. The contact layer is In.sub.x GA.sub.1-x As.sub.y P.sub.1-y which can be grown at a lower temperature than used in the first process. Therefore, deterioration in laser characteristics due to the diffusion of dopant impurities during the growth of contact layer can be prevented, resulting in a semiconductor laser device having high performance and long lifetime.
摘要翻译： 制造可见光的半导体激光器件包括：在AlGaInP系列材料的第一外延生长工艺中形成的具有第一导电型下包层，有源层和第二导电型上包层的双异质结结构， 第二次或以后的外延生长过程。 接触层是InxGA1-xAsyP1-y，其可以在比第一工艺中使用的温度低的温度下生长。 因此，可以防止由于在接触层生长期间掺杂剂杂质的扩散引起的激光特性的劣化，导致半导体激光器件具有高性能和长寿命。
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公开(公告)号：US07675954B2
公开(公告)日：2010-03-09
申请号：US11144772
申请日：2005-06-06
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译： 半导体激光装置包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。 电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形，每个顶点具有小于180度的内角。 由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。
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公开(公告)号：US07187701B2
公开(公告)日：2007-03-06
申请号：US10799714
申请日：2004-03-15
申请人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
发明人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/06226 , H01S5/16 , H01S5/2214 , H01S5/34366
摘要： A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.
摘要翻译： 脊波导半导体激光器包括有源层，有源层上的半导体层，具有脊形波导，半导体层上的绝缘膜，通过绝缘膜的开口与半导体层接触的第一电极层， 以及在所述第一电极层上具有带状并且沿着所述波导延伸的第二电极层。 从激光谐振器的端面到第二电极层的边缘的距离不超过20μm。
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公开(公告)号：US5596592A
公开(公告)日：1997-01-21
申请号：US515000
申请日：1995-08-14
申请人： Yoriko Tanigami , Tomoko Kadowaki , Akira Takemoto
发明人： Yoriko Tanigami , Tomoko Kadowaki , Akira Takemoto
CPC分类号： H01S5/227 , H01S5/0421 , H01S5/2206 , H01S5/2275 , H01S5/32391
摘要： A semiconductor laser device includes a ridge waveguide having two side surfaces, a crystalline burying layer disposed at both side surfaces of the ridge waveguide, and a second conductivity type contact layer disposed on the burying layer and the ridge waveguide. The burying layer includes a first conductivity type first current blocking layer in contact with the side surfaces of the ridge waveguide, a second conductivity type second current blocking layer disposed on a portion of the first current blocking layer and separated from the ridge waveguide by a portion of the first current blocking layer near the ridge waveguide, a first conductivity type third current blocking layer disposed on a portion of the first current blocking layer near the ridge waveguide and on the second current blocking layer, and a second conductivity type final burying layer disposed on the third current blocking layer. In this structure, there is no pn junction at a regrowth interface between the final burying layer and the contact layer so that reduction in the forward voltage of the pn junction in continuous operation is avoided and increasing leakage current is suppressed so that the threshold current and light output of the laser do not deteriorate over time.
摘要翻译： 半导体激光装置包括具有两个侧表面的脊波导，设置在脊波导的两个侧表面处的结晶掩埋层和设置在掩埋层和脊波导上的第二导电类型接触层。 掩埋层包括与脊形波导的侧表面接触的第一导电类型的第一电流阻挡层，设置在第一电流阻挡层的一部分上并与脊波导分开的第二导电类型的第二电流阻挡层， 在脊波导附近的第一电流阻挡层，设置在脊波导附近的第一电流阻挡层的一部分和第二电流阻挡层上的第一导电类型的第三电流阻挡层，以及设置在第二导电类型的最终掩埋层 在第三个电流阻挡层上。 在这种结构中，在最终掩埋层和接触层之间的再生界面处没有pn结，从而避免了在连续操作中pn结的正向电压的降低，并且抑制了增加的漏电流，使得阈值电流和 随着时间的推移，激光的光输出不会变差。
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8.发明授权
公开(公告)号：US5420066A
公开(公告)日：1995-05-30
申请号：US267211
申请日：1994-07-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层，有源层，AlAs组成比为0.38至0.6的AlGaAs的第二导电型第一上包层之后， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。
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9.发明授权
公开(公告)号：US5357535A
公开(公告)日：1994-10-18
申请号：US1547
申请日：1993-01-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层和有源层之后，具有0.38至0.6的AlAs组成比的AlGaAs的第二导电型第一上包层， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。
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公开(公告)号：US5214663A
公开(公告)日：1993-05-25
申请号：US818354
申请日：1992-01-09
CPC分类号： H01L33/305 , H01L33/0062 , H01S5/305 , H01S5/223 , H01S5/2231 , H01S5/3054 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser includes a p type cladding layer and an n type cladding layer sandwiching an active layer serially disposed on a semiconductor substrate. The p type cladding layer includes a first dopant impurity producing p type conductivity and a smaller quantity of a second impurity that produces n type conductivity and ionically bonds to the first impurity. The first and second dopant impurities attract each other and cannot move individually during a crystal growth step at high temperature whereby the diffusion of those impurities into the active layer is suppressed, preventing formation of a deep impurity level in the active layer, resulting in a semiconductor laser with a reduced threshold current.
摘要翻译： 半导体激光器包括p型覆层和夹着在半导体衬底上串联设置的有源层的n型覆层。 p型包覆层包括产生p型导电性的第一掺杂剂杂质和产生n型导电性并与第一杂质离子键合的较小量的第二杂质。 第一和第二掺杂剂杂质在高温下在晶体生长步骤期间彼此相互吸引，不能单独移动，从而抑制这些杂质向有源层的扩散，从而防止在有源层中形成深杂质水平，导致半导体 激光器具有降低的阈值电流。
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