公开(公告)号：US20060231877A1

公开(公告)日：2006-10-19

申请号：US11154595

申请日：2005-06-17

申请人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai

发明人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai

IPC分类号： H01L29/772

CPC分类号： H01L29/945 ,  H01L27/0207 ,  H01L27/1087

摘要： A semiconductor device comprises a semiconductor substrate having a surface of a plane orientation {100}, and a plurality of memory cells formed on the semiconductor substrate. The memory cells each include a capacitor formed in a trench extending from the surface into the semiconductor substrate, and a transistor. The transistor has a first source/drain region connected to the capacitor, a second source/drain region formed apart from the first source/drain region as leaving an interval therebetween and connected to a bit line, and a gate electrode formed over the interval between the first and second source/drain regions and connected to a word line. A transverse section of at least part of the trench is tetragonal. Transverse sections of the trenches in the memory cells are tilted at the substantially same angle against a direction of extension of the word line.

摘要翻译： 半导体器件包括具有面取向面{100}的表面的半导体衬底和形成在半导体衬底上的多个存储单元。 存储单元各自包括形成在从表面延伸到半导体衬底的沟槽中的电容器和晶体管。 晶体管具有连接到电容器的第一源极/漏极区域，与第一源极/漏极区域分开形成的第二源极/漏极区域，其间隔开并连接到位线;以及栅电极，形成在第二源极/漏极区域之间的间隔上 第一和第二源极/漏极区域并连接到字线。 沟槽的至少一部分的横截面为四边形。 存储单元中的沟槽的横截面相对于字线的延伸方向以大致相同的角度倾斜。

公开(公告)号：US20060128093A1

公开(公告)日：2006-06-15

申请号：US11105465

申请日：2005-04-14

申请人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai ,  Masaki Narita

发明人： Keiichi Takenaka ,  Katsunori Yahashi ,  Itsuko Sakai ,  Masaki Narita

IPC分类号： H01L21/8242

CPC分类号： H01L27/1087 ,  H01L29/945

摘要： A method of manufacturing a semiconductor device is provided. The method comprises forming a mask member on a surface of a semiconductor substrate; and forming a trench in the semiconductor substrate by selectively etching the semiconductor substrate with a mask of the mask member under a certain pressure. The pressure is changed on arrival of (Etching Depth)/(Aperture Width in said surface) at 30 or more for the remainder of the etching by a factor ranging from 1/2 to 9/10 relative to the pressure at the time of the arrival.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在半导体衬底的表面上形成掩模构件; 以及通过在一定压力下用掩模构件的掩模选择性地蚀刻半导体衬底，在半导体衬底中形成沟槽。 在蚀刻的其余部分（蚀刻深度）/（所述表面的孔径宽度）为30度以上时，压力变化为相对于 到达。

公开(公告)号：US20100027032A1

公开(公告)日：2010-02-04

申请号：US12510591

申请日：2009-07-28

申请人： Masayuki Dohi ,  Itsuko Sakai ,  Takayuki Sakai ,  Shunji Kikuchi ,  Takuto Inoue ,  Akihiro Hori ,  Masayuki Narita

发明人： Masayuki Dohi ,  Itsuko Sakai ,  Takayuki Sakai ,  Shunji Kikuchi ,  Takuto Inoue ,  Akihiro Hori ,  Masayuki Narita

IPC分类号： G01B11/00

CPC分类号： G01B11/028 ,  H01L21/67259

摘要： An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of θa1 and the second peripheral region having an inclination angle of θa2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles θa1 and θa2 satisfy the following expression: n×sin(θa1+θa2−arcsin(sin θa1/n))≧1

摘要翻译： 边缘检测方法包括制备透明基板，其包括具有第一主区域和第一周边区域的第一主面和具有第二主区域和第二周边区域的第二主面，所述第一周边区域具有倾斜角 θa1和第二外围区域具有θa2的倾斜角度，使得测量光从垂直于第一主区域的方向进入第一周边区域，检测测量光不从第二周边区域发射的不发射区域 ，并且基于所述不发射区域检测所述透明基板的边缘，其中如果所述透明基板的折射率为n，则所述倾斜角度θa1和θa2满足以下表达式：nxsin（θa1+θa2-arcsin（ sinθa1/ n））> = 1

公开(公告)号：US20060137988A1

公开(公告)日：2006-06-29

申请号：US11080944

申请日：2005-03-16

申请人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

发明人： Katsunori Yahashi ,  Keiichi Takenaka ,  Masaki Narita ,  Itsuko Sakai

IPC分类号： C25D21/12

CPC分类号： H01J37/32642 ,  H01J37/32935 ,  H01L21/67748 ,  H01L21/681

摘要： According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

摘要翻译： 根据本发明的一个方面，一种半导体制造装置，包括：处理室，其构造成容纳基板; 电极，设置在所述处理室中，所述基板被放置在所述电极上; 机器人臂构造成将所述基板传送到所述电极; 以及传感器，被配置为检测设置在所述电极的外周边缘部分上的聚焦环的检测图案，所述传感器包围放置在所述电极上的所述基板的周缘，并具有所述检测图案，其中，所述基板和 提供了基于所述传感器的检测结果来调整聚焦环的方法。

公开(公告)号：US20050011452A1

公开(公告)日：2005-01-20

申请号：US10854142

申请日：2004-05-27

申请人： Toshihiro Hayami ,  Etsuji Ito ,  Itsuko Sakai

发明人： Toshihiro Hayami ,  Etsuji Ito ,  Itsuko Sakai

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A low-cost plasma processing apparatus which permits reduction of the cost, as well as reduction of the loss of transmitted power. The plasma processing apparatus 1 has an apparatus main body 2 and auxiliary equipment 3. The auxiliary equipment 3 is comprised of a power supply apparatus 5 that supplies power to a processing chamber 4, and a plurality of dry pumps 6 and 7, and so on. The power supply apparatus 5 is comprised of a matching unit 9, an RF amplifier 13 that is connected to the matching unit 9 via a coaxial cable 24, and a power controller 12 having a DC amplifier 14 therein. The RF amplifier 13 is formed in a separate body to the DC amplifier 14 and disposed in a position away from the DC amplifier 14 and close to the matching unit 9, and is connected to the DC amplifier 14 via an ordinary cable 25.

摘要翻译： 一种低成本的等离子体处理装置，其允许降低成本，并且减少发射功率的损失。 等离子体处理装置1具有设备主体2和辅助设备3.辅助设备3包括向处理室4供电的供电设备5和多个干泵6和7等 。 电源装置5由匹配单元9，经由同轴电缆24连接到匹配单元9的RF放大器13以及其中具有DC放大器14的功率控制器12组成。 RF放大器13形成在与DC放大器14分离的主体中，并且设置在远离DC放大器14并靠近匹配单元9的位置，并且通过普通电缆25连接到DC放大器14。

公开(公告)号：US06689699B2

公开(公告)日：2004-02-10

申请号：US09955083

申请日：2001-09-19

申请人： Itsuko Sakai ,  Takayuki Sakai ,  Tokuhisa Ohiwa

发明人： Itsuko Sakai ,  Takayuki Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L2100

CPC分类号： C23C16/45593 ,  B08B7/0035 ,  C23C16/4412 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/31116 ,  Y10S438/909

摘要： There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump exhausting the process chamber, a second vacuum pump inhaling gas on an exhaust side of the first vacuum pump, and a circulation path circulating at least a part of the process gas exhausted from the process chamber via the first vacuum pump into the process chamber, wherein the circulation path is provided with a dust trapping mechanism, the dust trapping mechanism being capable of substantially maintaining a conductance of the circulation path before and after the capture of dust.

摘要翻译： 公开了一种半导体处理装置，包括处理基板的处理室，将处理气体输送到处理室的处理气体进料器，排出处理室的第一真空泵，第一真空泵吸入第一 真空泵，以及使从处理室经由第一真空泵排出的处理气体的至少一部分循环到处理室的循环路径，其中循环路径设置有除尘机构，所述除尘机构能够 在捕获灰尘之前和之后基本保持循环路径的电导。

公开(公告)号：US06642149B2

公开(公告)日：2003-11-04

申请号：US10286789

申请日：2002-11-04

申请人： Tomoki Suemasa ,  Tsuyoshi Ono ,  Kouichiro Inazawa ,  Makoto Sekine ,  Itsuko Sakai ,  Yukimasa Yoshida

发明人： Tomoki Suemasa ,  Tsuyoshi Ono ,  Kouichiro Inazawa ,  Makoto Sekine ,  Itsuko Sakai ,  Yukimasa Yoshida

IPC分类号： H01L21302

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

摘要： In a processing chamber of an etching apparatus a lower electrode and an upper electrode grounded through a processing container are disposed oppositely to each other. A first high frequency power supply section composed of a first filter, a first matching device, and a first power source, and a second high frequency power supply section composed of a second filter, a second matching device, and a second power source are connected to the lower electrode. A superimposed power of two frequencies composed of a first high frequency power component of at least 10 MHz produced from the first power source and a second high frequency power component of at least 2 MHz produced from the second power source is applied to the lower electrode. Ions in the plasma do not accelerated by changes of electric field in the processing chamber, but are accelerated by a self-bias voltage and collide only against a wafer on the lower electrode.

摘要翻译： 在蚀刻装置的处理室中，通过处理容器接地的下电极和上电极彼此相对设置。 由第一滤波器，第一匹配装置和第一电源组成的第一高频电源部分和由第二滤波器，第二匹配装置和第二电源组成的第二高频电源部分被连接 到下电极。 将由第一电源产生的至少10MHz的第一高频功率分量和由第二电源产生的至少2MHz的第二高频功率分量组成的两个频率的叠加功率施加到下部电极。 等离子体中的离子不会因处理室中的电场的变化而加速，而是通过自偏压加速并且仅与下电极上的晶片相撞。

公开(公告)号：US6038461A

公开(公告)日：2000-03-14

申请号：US66261

申请日：1998-04-24

申请人： Yoshifumi Sakai ,  Itsuko Sakai

发明人： Yoshifumi Sakai ,  Itsuko Sakai

IPC分类号： C04B35/45 ,  C04B35/645 ,  H01L39/24 ,  B22F3/12 ,  B32B15/04

CPC分类号： C04B35/45 ,  C04B35/645 ,  H01L39/2419 ,  Y10S505/704 ,  Y10S505/777 ,  Y10S505/778 ,  Y10S505/823

摘要： There are disclosed a high temperature superconductive material which can be plastically deformed, processed optionally into predetermined configurations and industrially mass produced and a method of manufacturing a formed body of the high temperature superconductive material. Mixed is a powder raw material which is mainly composed of: 10 to 50 mol % of at least one amide or nitride of alkali metal of Li, Na or K; 10 to 60 mol % of cyanide containing at least one metal selected from aluminum, copper, silver or gold; 5 to 50 mol % of at least one pure metal selected from aluminum, copper, silver or gold; and 10 mol % or less of at least one alkaline earth metal selected from Be, Mg, Ca, Sr or Ba. The powder raw material is pressed, and heated and sintered at the temperature of 673 K to 1553 K. In this manner, obtained is the plastically deformable high temperature superconductive material which can be optionally processed through forging, rolling and the like. Also, the obtained high temperature superconductive material has a critical temperature of 40 K to 80 K and a current density of 10000 A/cm.sup.2 or more.

摘要翻译： 公开了可以塑性变形的高温超导材料，任选地加工成预定的构造和工业上大量生产的高温超导材料，以及制造高温超导材料的成形体的方法。 混合粉末原料主要由以下组成：10〜50摩尔％的Li，Na或K的碱金属的至少一种酰胺或氮化物; 10至60mol％的含有至少一种选自铝，铜，银或金的金属的氰化物; 5〜50摩尔％的选自铝，铜，银或金的至少一种纯金属; 和10mol％以下的选自Be，Mg，Ca，Sr或Ba的至少一种碱土金属。 粉末原料被压制，并在673K至1553K的温度下加热和烧结。这样获得的是可塑性变形的高温超导材料，其可以通过锻造，轧制等任意加工。 另外，得到的高温超导材料的临界温度为40K〜80K，电流密度为10000A / cm 2以上。