摘要:
There are disclosed a high temperature superconductive material which can be plastically deformed, processed optionally into predetermined configurations and industrially mass produced and a method of manufacturing a formed body of the high temperature superconductive material. Mixed is a powder raw material which is mainly composed of: 10 to 50 mol % of at least one amide or nitride of alkali metal of Li, Na or K; 10 to 60 mol % of cyanide containing at least one metal selected from aluminum, copper, silver or gold; 5 to 50 mol % of at least one pure metal selected from aluminum, copper, silver or gold; and 10 mol % or less of at least one alkaline earth metal selected from Be, Mg, Ca, Sr or Ba. The powder raw material is pressed, and heated and sintered at the temperature of 673 K to 1553 K. In this manner, obtained is the plastically deformable high temperature superconductive material which can be optionally processed through forging, rolling and the like. Also, the obtained high temperature superconductive material has a critical temperature of 40 K to 80 K and a current density of 10000 A/cm.sup.2 or more.
摘要翻译:公开了可以塑性变形的高温超导材料,任选地加工成预定的构造和工业上大量生产的高温超导材料,以及制造高温超导材料的成形体的方法。 混合粉末原料主要由以下组成:10〜50摩尔%的Li,Na或K的碱金属的至少一种酰胺或氮化物; 10至60mol%的含有至少一种选自铝,铜,银或金的金属的氰化物; 5〜50摩尔%的选自铝,铜,银或金的至少一种纯金属; 和10mol%以下的选自Be,Mg,Ca,Sr或Ba的至少一种碱土金属。 粉末原料被压制,并在673K至1553K的温度下加热和烧结。这样获得的是可塑性变形的高温超导材料,其可以通过锻造,轧制等任意加工。 另外,得到的高温超导材料的临界温度为40K〜80K,电流密度为10000A / cm 2以上。
摘要:
A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.
摘要:
A charged beam irradiating apparatus, comprises a charged beam generating means, a vacuum chamber having a part exposed by the charged beam, the part exposed having contaminations deposited thereon, a gas introducing system connected to the chamber which includes a means for producing electrically neutral active species for removing the contaminations and selectively carrying the species into the chamber, and a system for exhausting the chamber.
摘要:
A method of cleaning a charged beam irradiating apparatus having a part exposed to a charged beam in a vacuum chamber to contaminate the part with organic contaminations, the method including the selective introduction of electrically neutral active species into the vacuum chamber, after it has been exhausted, to remove the contaminations from the part by exposure to the introduced neutral active species. The neutral active species are formed outside of the chamber in a plasma discharging gas with other species including electrons or positive ions. Only the electrically active neutral species are selected for introduction into the evacuated container.
摘要:
An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of θa1 and the second peripheral region having an inclination angle of θa2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles θa1 and θa2satisfy the following expression: n×sin(θa1+θa2−arcsin(sin θa1/n))≧1.
摘要:
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要:
In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
摘要:
This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
摘要:
In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
摘要:
A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desired pressure, a second vacuum pump for performing evacuation to lower the back pressure of the first vacuum pump below an allowable back pressure, and a gas recirculation line for returning a part of gas exhausted from the first vacuum pump to the vacuum chamber. The recirculation flow rate Q2 of the gas returning to the vacuum chamber through the gas recirculation line is controlled by adjusting the differential pressure Pd−Pc in the gas recirculation line by varying the effective pumping speed of the second vacuum pump using the following relationship: Q2=C×(Pd−Pc) where: Q2 denotes the recirculation flow rate of the gas returning to the vacuum chamber through the gas recirculation line; Pc denotes the pressure in the vacuum chamber; Pd denotes the pressure in the upstream side of the gas recirculation line; and C denotes the conductance of the gas recirculation line.