公开(公告)号：US06514870B2

公开(公告)日：2003-02-04

申请号：US09771085

申请日：2001-01-26

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H01L21302

CPC classification number: C23C16/0209 ,  C23C14/022 ,  C23C16/0245 ,  H01J2237/022

Abstract: A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

公开(公告)号：US06194038B1

公开(公告)日：2001-02-27

申请号：US09045278

申请日：1998-03-20

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H05H124

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US5811356A

公开(公告)日：1998-09-22

申请号：US704428

申请日：1996-08-19

Applicant: Laxman Murugesh ,  Pravin Narwankar ,  Turgut Sahin ,  Kent Rossman

Inventor： Laxman Murugesh ,  Pravin Narwankar ,  Turgut Sahin ,  Kent Rossman

IPC: C23C16/44 ,  C23C16/50 ,  C23C16/517 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC classification number: H01J37/32862 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/517 ,  H01J37/321 ,  Y10S438/905

Abstract: The present invention provides a method and apparatus for reducing the concentration of mobile ion and metal contaminants in a processing chamber by increasing the bias RF power density to greater than 0.051 W/mm.sup.2 and increasing the season time to greater than 30 seconds, during a chamber seasoning step. The method of performing a season step in a chamber by depositing a deposition material under the combined conditions of a bias RF power density of about 0.095 W/mm.sup.2 and a season time of from about 50 to about 70 seconds, reduces the mobile ion and metal contaminant concentrations within the chamber by about one order of magnitude.

Abstract translation: 本发明提供了一种通过在室内增加偏压RF功率密度大于0.051W / mm 2并将季节时间增加到大于30秒来减少处理室中的移动离子和金属污染物的浓度的方法和装置 调味步骤 通过在约0.095W / mm 2的偏置RF功率密度和约50至约70秒的季节时间的组合条件下沉积沉积材料在室中进行季节步骤的方法减少了移动离子和金属 室内的污染物浓度大约一个数量级。

公开(公告)号：US5748434A

公开(公告)日：1998-05-05

申请号：US663886

申请日：1996-06-14

Applicant: Kent Rossman ,  Brian Lue ,  Fred C. Redeker

Inventor： Kent Rossman ,  Brian Lue ,  Fred C. Redeker

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC classification number: H02N13/00 ,  H01L21/6831 ,  H01L21/6833

Abstract: A shield (5) for an electrostatic chuck (4) includes a first shield member (60) circumscribing the chuck and a second shield member (62) supported over the first shield member. The second shield member has an upper surface surrounding the wafer and exposed to deposition from gases within the process chamber. Splitting the shield into two members increases the ratio of exposed surface to thermal mass of the second shield member, which increases the temperature of the second shield member during processing, thereby decreasing the rate of deposition thereon. In addition, the clean rate or deposition removal rate of the shield is typically a function of its temperature (i.e., the hotter the shield becomes during processing, the faster it can be cleaned). Therefore, the clean rate of the second shield member will be increased, thereby enhancing the throughput of the process.

Abstract translation: 用于静电卡盘（4）的屏蔽（5）包括围绕卡盘的第一屏蔽构件（60）和支撑在第一屏蔽构件上的第二屏蔽构件（62）。 第二屏蔽构件具有围绕晶片的上表面并暴露于处理室内的气体沉积。 将屏蔽分成两个部件增加了第二屏蔽部件的暴露表面与热质量的比例，这在加工期间增加了第二屏蔽部件的温度，从而降低了其上的沉积速率。 此外，屏蔽的清洁速率或沉积去除速率通常是其温度的函数（即，加工期间屏蔽变得越热，其可以被清洁的速度越快）。 因此，第二屏蔽部件的清洁率将增加，从而提高过程的吞吐量。