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    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
    22.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    氮化物半导体发光器件

    公开(公告)号：US20110037049A1

    公开(公告)日：2011-02-17

    申请号：US12717653

    申请日：2010-03-04

    申请人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

    发明人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L33/30

    CPC分类号： H01L33/32 ,  H01L33/06

    摘要： Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of Iny1Ga1-y1N, a second subbarrier layer having a composition of Iny2Ga1-y2N and a third subbarrier layer having a composition of Iny3Ga1-y3N, in which y1, y2 and y3 satisfy the relationship of 0≦y1,y3

    摘要翻译： 公开了一种氮化物半导体发光器件，其包括衬底，形成在衬底上的一对p型和n型覆盖层以及具有单量子阱结构或多量子阱结构的有源层，其夹在 在p型覆盖层和n型覆盖层之间，包括量子阱层和一对阻挡层，每个阻挡层的带隙比量子阱层的带隙大，量子阱层夹在一对 阻挡层。 所述一对势垒层中的每一个具有多层结构，包括从量子阱层侧开始具有In y Ga 1-y N N的组成的第一子屏蔽层，具有In y Ga 1-y N N的组成的第二子隔离层和第三子阱 y1，y2和y3满足0＆nlE; y1，y3

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER
    23.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
    半导体发光器件和散热器

    公开(公告)号：US20120286284A1

    公开(公告)日：2012-11-15

    申请号：US13206700

    申请日：2011-08-10

    申请人： Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

    摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

    摘要翻译： 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

    Semiconductor light emitting device
    25.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09048362B2

    公开(公告)日：2015-06-02

    申请号：US13405565

    申请日：2012-02-27

    申请人： Shigeya Kimura ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/34

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3408 ,  H01S5/34333

    摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。 发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。 阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分 一部分。 阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分 一部分。

    Semiconductor light emitting device
    26.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08895956B2

    公开(公告)日：2014-11-25

    申请号：US13218827

    申请日：2011-08-26

    申请人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

    Semiconductor light emitting device and wafer
    27.
    发明授权
    Semiconductor light emitting device and wafer 有权
    半导体发光器件和晶圆

    公开(公告)号：US09142717B2

    公开(公告)日：2015-09-22

    申请号：US13206700

    申请日：2011-08-10

    申请人： Koichi Tachibana ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L33/12 ,  B82Y20/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

    摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

    摘要翻译： 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

    Nitride semiconductor light emitting device
    28.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US08455917B2

    公开(公告)日：2013-06-04

    申请号：US13221456

    申请日：2011-08-30

    申请人： Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

    发明人： Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

    IPC分类号： H01L29/66

    CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

    摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

    摘要翻译： 根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。 在第一包层上形成有源层，并且包括含In氮化物半导体。 在有源层上形成GaN层。 第一AlGaN层形成在GaN层上，并具有第一Al组成比。 在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组成比的第二Al组成比，并且含有比GaN层和第一AlGaN层更大量的Mg。 第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    29.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120153253A1

    公开(公告)日：2012-06-21

    申请号：US13218827

    申请日：2011-08-26

    申请人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    发明人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。