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    Antireflective coating for use during the manufacture of a semiconductor device
    24.
    发明申请
    Antireflective coating for use during the manufacture of a semiconductor device 审中-公开
    在制造半导体器件期间使用的抗反射涂层

    公开(公告)号：US20060220184A1

    公开(公告)日：2006-10-05

    申请号：US11214376

    申请日：2005-08-29

    申请人： Zhiping Yin ,  Gurtej Sandhu

    发明人： Zhiping Yin ,  Gurtej Sandhu

    IPC分类号： H01L23/58

    CPC分类号： H01L27/10888 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10811 ,  H01L27/10852 ,  H01L28/90

    摘要： An antireflective layer formed from boron-doped amorphous carbon may be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer may be removed by exposing the layer to an oxygen plasma (i.e. an “ashing” process), preferably concurrently with the ashing and removal of an overlying photoresist layer. An inventive process which uses the inventive antireflective layer is also described.

    摘要翻译： 可以使用与常规技术相比不太可能过蚀刻电介质层的方法来去除由硼掺杂的非晶碳形成的抗反射层。 可以通过将层暴露于氧等离子体（即，“灰化”工艺），优选地与上覆的光致抗蚀剂层的灰化和去除同时地去除该层。 还描述了使用本发明的抗反射层的本发明的方法。

    MASKING METHODS
    27.
    发明申请
    MASKING METHODS 有权
    掩蔽方法

    公开(公告)号：US20050042879A1

    公开(公告)日：2005-02-24

    申请号：US10652174

    申请日：2003-08-22

    申请人： Zhiping Yin ,  Gurtej Sandhu

    发明人： Zhiping Yin ,  Gurtej Sandhu

    IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768 ,  H01L21/336 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/46 ,  H01L21/4763

    CPC分类号： H01L21/3086 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816 ,  H01L29/6653 ,  Y10S438/945 ,  Y10S438/952

    摘要： The invention includes masking methods. In one implementation, a masking material comprising boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material comprises at least about 0.5 atomic percent boron. The masking material is substantially anisotropically etched effective to form an anisotropically etched sidewall spacer comprising the boron doped amorphous carbon on a sidewall of the feature. The substrate is then processed proximate the spacer while using the boron doped amorphous carbon comprising spacer as a mask. After processing the substrate proximate the spacer, the boron doped amorphous carbon comprising spacer is etched from the substrate. Other implementations and aspects are contemplated.

    摘要翻译： 本发明包括掩蔽方法。 在一个实施方案中，在形成在半导体衬底上的特征上形成包含硼掺杂的非晶碳的掩模材料。 掩模材料包含至少约0.5原子％的硼。 掩模材料基本上是各向异性蚀刻有效地形成各向异性蚀刻的侧壁间隔物，其包含该特征侧壁上的硼掺杂无定形碳。 然后使用包含间隔物的硼掺杂的无定形碳作为掩模，然后在衬垫附近处理衬底。 在靠近间隔物处理衬底之后，从衬底上蚀刻包含衬底的硼掺杂非晶碳。 考虑其他实现和方面。

    Anti-reflective coatings and methods for forming and using same
    28.
    发明授权
    Anti-reflective coatings and methods for forming and using same 有权

    公开(公告)号：US06541843B2

    公开(公告)日：2003-04-01

    申请号：US09939409

    申请日：2001-08-24

    申请人： Zhiping Yin ,  Gurtej Sandhu

    发明人： Zhiping Yin ,  Gurtej Sandhu

    IPC分类号： H01L2358

    CPC分类号： H01L21/76897 ,  H01L21/0276 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76814

    摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

    Anti-reflective coatings and methods for forming and using same
    29.
    发明授权
    Anti-reflective coatings and methods for forming and using same 有权
    抗反射涂层及其形成和使用方法

    公开(公告)号：US06294459B1

    公开(公告)日：2001-09-25

    申请号：US09146293

    申请日：1998-09-03

    申请人： Zhiping Yin ,  Gurtej Sandhu

    发明人： Zhiping Yin ,  Gurtej Sandhu

    IPC分类号： H01L214763

    CPC分类号： H01L21/76897 ,  H01L21/0276 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76814

    摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

    摘要翻译： 提供了具有相对高的蚀刻速率的抗反射涂层材料层，使得其可以在相对较短的时间段内清洁所定义的开口同时移除，而不影响开口的临界尺寸。 形成这种层的方法包括提供衬底组合表面并使用至少含硅前体，含氮前体和含氧前体的气体混合物。 该层在约50℃至约600℃的温度范围内形成。通常，沉积的抗反射涂层材料为SixOyNz：H，其中x在约0.39至约0.65的范围内， y在约0.02至约0.56的范围内，z在约0.05至约0.33的范围内，并且其中无机抗反射涂层材料层中的氢的原子百分比在约10原子％至 约40原子％。 总SiH 4流通常在约80sccm至约400sccm的范围内。 气体混合物可以包括SiH 4和N 2 O，其中SiH 4 :N 2 O的比例在约0.25至0.60的范围内。 无机抗反射涂层材料层可用于限定接触开口，用于形成电容器结构的开口或氧化物层中的任何其它开口。