公开(公告)号：US20200168572A1

公开(公告)日：2020-05-28

申请号：US16779217

申请日：2020-01-31

Applicant: MediaTek Inc.

Inventor： Tzu-Hung Lin ,  I-Hsuan Peng ,  Nai-Wei Liu ,  Wei-Che Huang ,  Che-Ya Chou

IPC: H01L23/66 ,  H01L23/538 ,  H01L23/552 ,  H01L23/00 ,  H01L25/16

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite to the first substrate. The first RDL structure includes a plurality of first conductive traces close to the first surface of the first RDL structure. An antenna pattern is disposed close to the second surface of the first RDL structure. A first semiconductor die is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. A plurality of conductive structures is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. The plurality of conductive structures is spaced apart from the antenna pattern through the plurality of first conductive traces of the first RDL structure.

公开(公告)号：US20200091070A1

公开(公告)日：2020-03-19

申请号：US16430076

申请日：2019-06-03

Applicant: MediaTek Inc.

Inventor： Yen-Yao Chi ,  Nai-Wei Liu ,  Ta-Jen Yu ,  Tzu-Hung Lin ,  Wen-Sung Hsu

IPC: H01L23/528 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/29

Abstract: A semiconductor package structure including a semiconductor die having a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. A first protective insulating layer covers the first and third surfaces of the semiconductor die. A redistribution layer (RDL) structure is electrically coupled to the semiconductor die and surrounded by the first protective insulating layer on the first surface of the semiconductor die. A first passivation layer covers the first protective insulating layer and the RDL structure. At least one conductive structure passes through the first passivation layer and is electrically coupled to the RDL structure. A method of forming the semiconductor package is also provided.

公开(公告)号：US10483211B2

公开(公告)日：2019-11-19

申请号：US15418896

申请日：2017-01-30

Applicant: MEDIATEK INC.

Inventor： Tzu-Hung Lin ,  I-Hsuan Peng ,  Ching-Wen Hsiao ,  Nai-Wei Liu ,  Wei-Che Huang

IPC: H01L23/538 ,  H01L25/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L49/02 ,  H01L23/498 ,  H01L23/00

Abstract: A semiconductor package structure including a first semiconductor package is provided. The first semiconductor package includes a first redistribution layer (RDL) structure having a first surface and a second surface opposite thereto. A first semiconductor die is disposed on and electrically coupled to the first surface of the first RDL structure. A first molding compound is disposed on the first surface of the first RDL structure and surrounds the first semiconductor die. A plurality of solder balls or conductive pillar structures is disposed in the first molding compound and electrically coupled to the first semiconductor die through the first RDL structure. A method for forming the semiconductor package is also provided.

公开(公告)号：US20240290737A1

公开(公告)日：2024-08-29

申请号：US18418320

申请日：2024-01-21

Applicant: MEDIATEK INC.

Inventor： Hung-Pin Tsai ,  Pei-Haw Tsao ,  Nai-Wei Liu ,  Wen-Sung Hsu

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155

Abstract: A bump structure includes a conductive pad on a semiconductor die; a passivation layer covering a perimeter of the conductive pad; and a first polymer layer on the passivation layer. The first polymer layer includes a via opening partially exposing the central portion of the conductive pad. A RDL is disposed on the first polymer layer and patterned into a bump pad situated directly above the conductive pad. The via opening is completely filled with the RDL and a RDL via is integrally formed with the bump pad. A second polymer layer is disposed on the first polymer layer. An island of the second polymer layer is disposed at a central portion of the bump pad. UBM layer is disposed on the bump pad. The UBM layer covers the island and forms a bulge thereon. A bump is disposed on the UBM layer.

公开(公告)号：US11728292B2

公开(公告)日：2023-08-15

申请号：US16779217

申请日：2020-01-31

Applicant: MediaTek Inc.

Inventor： Tzu-Hung Lin ,  I-Hsuan Peng ,  Nai-Wei Liu ,  Wei-Che Huang ,  Che-Ya Chou

IPC: H01L23/552 ,  H01L23/66 ,  H01L23/538 ,  H01L25/16 ,  H01L23/00 ,  H01L25/10 ,  H01L23/498

CPC classification number: H01L23/66 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L23/49816 ,  H01L25/105 ,  H01L2223/6677 ,  H01L2224/02379 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1421 ,  H01L2924/1435 ,  H01L2924/1438 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/3025

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite to the first substrate. The first RDL structure includes a plurality of first conductive traces close to the first surface of the first RDL structure. An antenna pattern is disposed close to the second surface of the first RDL structure. A first semiconductor die is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. A plurality of conductive structures is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. The plurality of conductive structures is spaced apart from the antenna pattern through the plurality of first conductive traces of the first RDL structure.

公开(公告)号：US11410936B2

公开(公告)日：2022-08-09

申请号：US16983182

申请日：2020-08-03

Applicant: MEDIATEK INC.

Inventor： Tzu-Hung Lin ,  Chia-Cheng Chang ,  I-Hsuan Peng ,  Nai-Wei Liu

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L25/065 ,  H01L23/043 ,  H01L23/13 ,  H01L23/538

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto, wherein the substrate includes a wiring structure, and a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The package further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are separated by a molding material. A first hole and a second hole are formed on the second surface of the substrate. Finally, a frame is disposed over the first surface of the substrate, wherein the frame surrounds the first semiconductor die and the second semiconductor die.

公开(公告)号：US20210327835A1

公开(公告)日：2021-10-21

申请号：US17361285

申请日：2021-06-28

Applicant: MediaTek Inc.

Inventor： Nai-Wei Liu ,  Yen-Yao Chi ,  Yeh-Chun Kao ,  Shih-Huang Yeh ,  Tzu-Hung Lin ,  Wen-Sung Hsu

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q9/16

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

公开(公告)号：US11081453B2

公开(公告)日：2021-08-03

申请号：US16452395

申请日：2019-06-25

Applicant: MediaTek Inc.

Inventor： Nai-Wei Liu ,  Yen-Yao Chi ,  Yeh-Chun Kao ,  Shih-Huang Yeh ,  Tzu-Hung Lin ,  Wen-Sung Hsu

IPC: H01L23/66 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q9/16 ,  H01L23/31 ,  H01L23/498 ,  H01L23/48

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

公开(公告)号：US10468341B2

公开(公告)日：2019-11-05

申请号：US16232129

申请日：2018-12-26

Applicant: MEDIATEK INC.

Inventor： Nai-Wei Liu ,  Tzu-Hung Lin ,  I-Hsuan Peng ,  Che-Hung Kuo ,  Che-Ya Chou ,  Wei-Che Huang

IPC: H01L23/485 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L25/10

Abstract: A semiconductor package assembly includes a redistribution layer (RDL) structure, which RDL structure includes a conductive trace. A redistribution layer (RDL) contact pad is electrically coupled to the conductive trace, and the RDL contact pad is composed of a symmetrical portion and an extended wing portion connected to the symmetrical portion. The RDL structure includes a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region, and the extended wing portion of the RDL contact pad is offset from a center of the first region.

公开(公告)号：US20190252351A1

公开(公告)日：2019-08-15

申请号：US16279925

申请日：2019-02-19

Applicant: MediaTek Inc.

Inventor： Tzu-Hung Lin ,  I-Hsuan Peng ,  Nai-Wei Liu ,  Ching-Wen Hsiao ,  Wei-Che Huang

IPC: H01L25/065 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H01L23/552 ,  H01L23/31 ,  H01L23/538 ,  H01L23/522

CPC classification number: H01L25/0652 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L2223/6677 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1421 ,  H01L2924/1435 ,  H01L2924/1438 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/3025

Abstract: A semiconductor package structure including a first semiconductor package is provided. The first semiconductor package includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite thereto. A first semiconductor die and a first molding compound that surrounds the first semiconductor die are disposed on the first surface of the first RDL structure. An IMD structure having a conductive layer with an antenna pattern or a conductive shielding layer is disposed on the first molding compound and the first semiconductor die.