摘要:
A technology capable of efficiently performing the processes by using limited resources in an LSI where a plurality of real-time applications are parallelly processed is provided. To provide such a technology, a mechanism is provided in which a plurality of processes to be executed on a plurality of processing units in an LSI are managed throughout the LSI in a unified manner. For each process to be managed, a priority is calculated based on the state of progress of the process, and the execution of the process is controlled according to the priority. A resource management unit IRM or program that collects information such as a process state from each of the processing units executing the processes and calculates a priority for each process is provided. Also, a programmable interconnect unit and storage means for controlling a process execution sequence according to the priority are provided.
摘要:
A technology capable of efficiently performing the processes by using limited resources in an LSI where a plurality of real-time applications are parallelly processed is provided. To provide such a technology, a mechanism is provided in which a plurality of processes to be executed on a plurality of processing units in an LSI are managed throughout the LSI in a unified manner. For each process to be managed, a priority is calculated based on the state of progress of the process, and the execution of the process is controlled according to the priority. A resource management unit IRM or program that collects information such as a process state from each of the processing units executing the processes and calculates a priority for each process is provided. Also, a programmable interconnect unit and storage means for controlling a process execution sequence according to the priority are provided.
摘要:
In a semiconductor device in which a plurality of memory LSIs and a plurality of processor LSIs are stacked, as the number of stacked layers increase, the communication distance of data between a memory LSI and a processor LSI will increase. Therefore, the parasitic capacitance and parasitic resistance of the wiring used for the communication increase and, as a result of which, the power and speed performance of the entire system will be degraded. At least two or more of the combinations of a processor LSI 100 and a memory LSI 200 are stacked and the processor LSI 100 and the memory LSI 200 in the same combination are stacked adjacent to each other in the vertical direction. Communication between the processor LSI 100 and the memory LSI 200 in the same combination is performed by a dedicated electrode provided therebetween, and communication between processor LSIs 100 and communication from the processor LSI 100 to the outside are performed by a through silicon via for signal 11 which passes through all the LSIs.
摘要:
In a semiconductor device in which a plurality of memory LSIs and a plurality of processor LSIs are stacked, as the number of stacked layers increase, the communication distance of data between a memory LSI and a processor LSI will increase. Therefore, the parasitic capacitance and parasitic resistance of the wiring used for the communication increase and, as a result of which, the power and speed performance of the entire system will be degraded. At least two or more of the combinations of a processor LSI 100 and a memory LSI 200 are stacked and the processor LSI 100 and the memory LSI 200 in the same combination are stacked adjacent to each other in the vertical direction. Communication between the processor LSI 100 and the memory LSI 200 in the same combination is performed by a dedicated electrode provided therebetween, and communication between processor LSIs 100 and communication from the processor LSI 100 to the outside are performed by a through silicon via for signal 11 which passes through all the LSIs.
摘要:
As the transfer between a processor LSI and a memory has been increasing year by year, there is a demand for increasing the traffic amount and reducing the power required for communication. With this being the condition, a method of stacking LSIs thereby reducing the communication distance is being contemplated. However, the inventors have found that the reduction of cost in the stacking process and the increase in the degree of freedom of selecting the memory LSI to be stacked are required for a simple stacking of processor LSIs and memory LSIs as so far practiced. An external communication LSI including a circuit for performing the communication with the outside of the stacked LSI at a high rate of more than 1 GHz; a processor LSI including a general purpose CPU etc.; and a memory LSI including a DRAM etc. are stacked in this order and those LSIs are connected with one another with a through silicon via to enable a high speed and high volume communication at a shortest path. Further, an interposer for facilitating the connection with the processor LSI is connected to the input terminal of the memory LSI to be stacked thereby increasing the degree of freedom in selecting memories.
摘要:
The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要:
A semiconductor device including a pair of stacked semiconductor ICs capable of communicating with each other by wireless. Each IC has: a transmitter circuit operable to send, by wireless, transmit data together with a clock signal deciding a transmission timing, and arranged so that the wireless transmission timing is adjustable; a receiver circuit operable to receive data in synchronization with a clock signal received by wireless, and arranged so that its wireless reception timing is adjustable; and a control circuit operable to perform timing adjustments of the transmitter and receiver circuits based on a result of authentication of data returned by the other IC in response to data transmitted through the transmitter circuit, and received by the receiver circuit. This arrangement for near field communication between stacked semiconductor ICs enables: reduction of the scale of a circuit for communication timing adjustment; and highly accurate adjustment of the communication timing.
摘要:
The performance of a whole system is improved by synchronizing communication and computations between stacked computing LSIs. Each of stacked an external communication LSI and a computing LSI has a PLL which multiplies a crystal oscillator clock signal, a clock pulse generator which distributes the clock signal, and flip-flop circuits. The computing LSI has a DLL circuit composed of a clock phase comparator, a delay controller, and a delay chain. In order to synchronize the communication and computations of the external communication LSI and the computing LSI, a synchronization reference clock signal is transmitted from the external communication LSI to the computing LSI via a through-electrode. An internal clock signal of the computing LSI is synchronized with the synchronization reference clock signal from the external communication LSI by the DLL circuit.
摘要:
A semiconductor device where multiple chips of identical design can be stacked, and the spacer and interposer eliminated, to improve three-dimensional coupling information transmission capability. A first semiconductor circuit including a three-dimensional coupling circuit (three-dimensional coupling transmission terminal group and three-dimensional coupling receiver terminal group); and a second semiconductor integrated circuit including a three-dimensional coupling circuit and feed-through electrode (power supply via hole and ground via hole); and a third semiconductor integrated circuit including a three-dimensional coupling circuit and feed-through electrode are stacked on the package substrate.
摘要:
An interconnect configuration technology of making an access from an IP mounted on a semiconductor chip to an IP mounted on another semiconductor chip by transmitting and receiving a packet transferred through an interconnect built in a semiconductor chip among the chips using the 3D coupling technology. The device according to the technology has an initiator for transmitting an access request, a target for receiving the access request and transmitting an access response, a router for relaying the access request and the access response, and a 3D coupling circuit (three-dimensional transceiver) for performing communication with the outside, wherein the 3D coupling circuit is disposed adjacent to the router.