公开(公告)号：US06602471B1

公开(公告)日：2003-08-05

申请号：US09568125

申请日：2000-05-10

申请人： Masahiro Sato ,  Yoshihisa Iwaki ,  Yuji Yasui ,  Takashi Haga ,  Masaki Ueno ,  Tetsuo Endo

发明人： Masahiro Sato ,  Yoshihisa Iwaki ,  Yuji Yasui ,  Takashi Haga ,  Masaki Ueno ,  Tetsuo Endo

IPC分类号： G01N3096

CPC分类号： F01N3/0835 ,  F01N3/0814 ,  F01N13/009 ,  F01N2370/04 ,  F01N2560/028 ,  G01N27/043 ,  G01N27/221 ,  G01N33/0047 ,  Y10T436/21

摘要： There are provided an adsorption amount sensor which is capable of accurately detecting an amount of hydrocarbons or water adsorbed by a zeolite of a hydrocarbon adsorber, even during operation of an engine, as well as a coking sensor which is capable of accurately detecting an amount of coke deposition on inner surfaces of a pipe of an internal combustion engine, even during operation of an engine. The adsorption amount sensor has a plurality of electrodes arranged in the vicinity of the hydrocarbon adsorber in a manner opposed to each other and each carrying a zeolite thereon. The amount of hydrocarbons adsorbed is detected by using a parameter indicative of changes in at least one of a resistance value between the electrodes and an electrical capacitance between the electrodes. The coking sensor has a plurality of electrodes arranged within the pipe of the engine in a manner opposed to each other and each having a surface thereof coated with an insulating material. The amount of coke deposition is detected by using a parameter indicative of changes in at least one of a resistance value between the electrodes and an electrical capacitance between the electrodes.

摘要翻译： 提供了一种吸附量传感器，其能够精确地检测碳氢化合物吸附器的沸石或发动机的操作期间吸附的烃的量，以及焦化传感器，该焦化传感器能够精确地检测 即使在发动机的运转期间，内燃机的管的内表面上的焦炭沉积。 吸附量传感器具有以彼此相对的方式布置在烃吸附器附近的多个电极，并且各自在其上承载沸石。 通过使用指示电极之间的电阻值和电极之间的电容中的至少一个的变化的参数来检测吸附的烃的量。 焦化传感器具有以彼此相对的方式布置在发动机的管内的多个电极，并且每个电极的表面涂覆有绝缘材料。 通过使用指示电极之间的电阻值和电极之间的电容中的至少一个的变化的参数来检测焦炭沉积量。

公开(公告)号：US06820413B2

公开(公告)日：2004-11-23

申请号：US10235815

申请日：2002-09-06

申请人： Masaki Ueno ,  Yoshihisa Iwaki ,  Shiro Takakura ,  Yasuyuki Miyahara ,  Tadashi Sato

发明人： Masaki Ueno ,  Yoshihisa Iwaki ,  Shiro Takakura ,  Yasuyuki Miyahara ,  Tadashi Sato

IPC分类号： F01N300

CPC分类号： F01N3/0835 ,  F01N3/0814 ,  F01N3/0878 ,  F01N3/101 ,  F01N11/00 ,  F01N13/009 ,  F01N13/0093 ,  F01N2550/03 ,  F02D41/0245 ,  F02D41/1446 ,  F02D41/1495 ,  F02D2200/0406 ,  F02D2200/0414 ,  F02D2200/0418 ,  F02P5/1506 ,  Y02T10/22 ,  Y02T10/26 ,  Y02T10/46 ,  Y02T10/47

摘要： A state determining apparatus for an exhaust gas purifier is provided for accurately determining the state of the exhaust gas purifier including an adsorbent for adsorbing hydrocarbons, including a deterioration of the adsorbent, in accordance with an ignition time of an internal combustion engine. The state determining apparatus for an exhaust gas purifier is arranged in an exhaust system of the internal combustion engine for determining the state of the exhaust gas purifier including the adsorbent capable of adsorbing hydrocarbons and moisture in exhaust gas. The state determining apparatus has a humidity sensor arranged at a location downstream of the adsorbent in the exhaust system for detecting the humidity of exhaust gases, and an ECU for determining the state of the adsorbent in accordance with the humidity of exhaust gases detected by the humidity sensor, and the ignition time of the internal combustion engine.

摘要翻译： 提供一种用于排气净化器的状态确定装置，用于根据内燃机的点火时间精确地确定包括用于吸附烃的吸附剂的废气净化器的状态，包括吸附剂的劣化。 用于排气净化器的状态判定装置设置在内燃机的排气系统中，用于确定包括能够吸附废气中的碳氢化合物和水分的吸附剂的废气净化器的状态。 状态判定装置具有布置在排气系统中用于检测废气湿度的吸附剂下游位置处的湿度传感器，以及用于根据湿度检测到的废气湿度来确定吸附剂的状态的ECU 传感器和内燃机的点火时间。

公开(公告)号：US06758033B2

公开(公告)日：2004-07-06

申请号：US10234710

申请日：2002-09-05

申请人： Masaki Ueno ,  Yoshihisa Iwaki ,  Masahiro Sato ,  Tetsuo Endo ,  Shiro Takakura

发明人： Masaki Ueno ,  Yoshihisa Iwaki ,  Masahiro Sato ,  Tetsuo Endo ,  Shiro Takakura

IPC分类号： F01N300

CPC分类号： F01N3/0835 ,  F01N3/0878 ,  F01N3/101 ,  F01N11/00 ,  F01N11/005 ,  F01N13/009 ,  F01N13/0093 ,  F01N13/0097 ,  F01N2550/03 ,  F02D41/027 ,  F02D41/1456 ,  F02D41/1495 ,  F02D2200/0418 ,  F02D2200/0802 ,  F02M26/15 ,  Y02T10/22 ,  Y02T10/47

摘要： A state determining apparatus for an exhaust gas purifier is provided for determining the state of the exhaust gas purifier including an adsorbent for adsorbing hydrocarbons; in accordance with the temperature state in the exhaust system of an internal combustion engine. The state determining apparatus is arranged in an exhaust system of the internal combustion engine. The state determining apparatus comprises a humidity sensor for detecting the humidity within a bypass exhaust pipe, and an ECU for determining the temperature state of the exhaust system and determining the state of adsorbent in accordance with the humidity within the bypass exhaust pipe detected by the humidity sensor and the temperature state in the exhaust system detected by the ECU.

摘要翻译： 提供一种用于排气净化器的状态确定装置，用于确定包括用于吸附烃的吸附剂的废气净化器的状态; 根据内燃机的排气系统的温度状态。 状态判定装置配置在内燃机的排气系统中。 状态判定装置包括用于检测旁通排气管内的湿度的湿度传感器和用于确定排气系统的温度状态的ECU，并根据由湿度检测到的旁通排气管内的湿度来确定吸附剂的状态 传感器和ECU检测到的排气系统中的温度状态。

公开(公告)号：US06758038B2

公开(公告)日：2004-07-06

申请号：US10233683

申请日：2002-09-04

申请人： Masaki Ueno ,  Yoshihisa Iwaki ,  Masahiro Sato ,  Hideharu Yamazaki

发明人： Masaki Ueno ,  Yoshihisa Iwaki ,  Masahiro Sato ,  Hideharu Yamazaki

IPC分类号： F01N300

CPC分类号： G01K7/42 ,  F02D41/024 ,  F02D41/047 ,  F02D41/1446 ,  F02D2041/0067 ,  F02D2200/0406 ,  F02D2200/0414 ,  F02D2200/0418 ,  F02D2200/0804 ,  G01K2205/04 ,  Y02T10/26

摘要： A temperature estimating apparatus for an internal combustion engine is provided for correctly calculating the temperature of an exhaust device even when the internal combustion engine is started under low temperature conditions. The temperature estimating apparatus comprises an ECU for estimating the temperature of a hydrocarbon adsorbent in an exhaust system of the internal combustion engine through calculations. The ECU calculates an estimated adsorbent temperature of the adsorbent in accordance with an engine rotational speed, an absolute intake pipe inner pressure, an engine water temperature, an intake temperature, and a detected humidity of exhaust gases. This calculation is started when condensation, which has occurred within an intake pipe, is eliminated.

摘要翻译： 内燃机的温度推定装置，即使内燃机在低温条件下起动，也能够正确地计算排气装置的温度。 温度推定装置包括ECU，用于通过计算来估计内燃机的排气系统中的烃吸附剂的温度。 ECU根据发动机转速，绝对进气管内压，发动机水温，进气温度和检测到的排气湿度来计算吸附剂的吸附剂的估计温度。 当进气管内发生的冷凝水被消除时，开始计算。

公开(公告)号：US20150151344A1

公开(公告)日：2015-06-04

申请号：US14374293

申请日：2012-01-26

申请人： Masaki Ueno ,  Yuji Suenaga

发明人： Masaki Ueno ,  Yuji Suenaga

IPC分类号： B21C37/15 ,  B21K7/12 ,  B21D5/00

CPC分类号： B21D22/025 ,  B21C37/15 ,  B21D5/00 ,  B21D5/015 ,  B21D53/88 ,  B21K7/12

摘要： [Problem] A method for manufacturing a bent hollow pipe is provided, in which even when a three-dimensionally bent pipe is formed, a gap, an uneven thickness, and the like would not occur at contact portions at the ends of both of the flange portions when press work is finished, and thus a pipe having the high quality contact portions can be formed.[Solution] In a method for manufacturing a bent hollow pipe, a material W, which is to be processed and which is a flat plate extending a first plane formed by a first direction and a second direction perpendicular to the first direction, is pressed in a stepwise manner using a plurality of forming dies from a third direction perpendicular to the first plane, so that two sides of a second plane formed by the second direction and the third direction of the material W are brought into contact with each other, and the bent hollow pipe is made to be bent and extend in a three dimensional manner that is bent in the first plane and in the second plane. The method includes a step in which a push out portion 13 is formed that is pushed out onto the material W in the third direction and that is bent and extends within a third plane formed by the first direction and the third direction in a press work, and extension portions 15 are formed to extend away from each other at both sides which sandwich the push out portion 13 of the material W, and flange portions 16 are formed that are bent, in a direction opposite to a push out direction of the push out portion 13, at ends of the extension portions 15, a step in which while bending is maintained between the extension portions 15 and the flange portions 16, a bent portions 17 between the push out portion 13 and the extension portions 15 are bent in the opposite directions, so that the both of the flange portions 16 are formed in a direction in which the both of the flange portions 16 face each other, a step in which the both of the flange portions 16 of a three-dimensionally bent portion P that is bent in the first plane and in the second plane are bent and brought closer to each other as compared with both of the flange portions 16 in a portion other than the three-dimensionally bent portion P, and a step of bringing ends of the flange portions 16 into contact with each other.

公开(公告)号：US08927962B2

公开(公告)日：2015-01-06

申请号：US13055690

申请日：2010-02-26

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L29/66 ,  H01L33/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

公开(公告)号：US20140110758A1

公开(公告)日：2014-04-24

申请号：US14124600

申请日：2011-06-08

申请人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

发明人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/8128

摘要： The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer 4, a p-type layer 6, and an n-type top layer 8. The semiconductor device includes a regrown layer 27 formed so as to cover a portion of the GaN-based stacked layer that is exposed to an opening 28, the regrown layer 27 including a channel. The channel is two-dimensional electron gas formed at an interface between the electron drift layer and the electron supply layer. When the electron drift layer 22 is assumed to have a thickness of d, the p-type layer 6 has a thickness in the range of d to 10d, and a graded p-type impurity layer 7 whose concentration decreases from a p-type impurity concentration in the p-type layer is formed so as to extend from a (p-type layer/n-type top layer) interface to the inside of the n-type top layer.

摘要翻译： 半导体器件形成为包括n型漂移层4，p型层6和n型顶层8的GaN基叠层的形式。半导体器件包括如下形成的再生长层27 为了覆盖暴露于开口28的GaN基叠层的一部分，再生长层27包括沟道。 通道是在电子漂移层和电子供给层之间的界面处形成的二维电子气。 当假定电子漂移层22的厚度为d时，p型层6的厚度在d至10d的范围内，并且p型杂质层7的浓度从p型杂质降低 从（p型层/ n型顶层）界面向n型顶层的内部形成p型层的浓度。

公开(公告)号：US20140008886A1

公开(公告)日：2014-01-09

申请号：US14004854

申请日：2012-03-14

申请人： Masaki Ueno ,  Hitoshi Kunihara

发明人： Masaki Ueno ,  Hitoshi Kunihara

IPC分类号： B60G7/00

CPC分类号： B60G7/001 ,  B60G2206/11 ,  B60G2206/722 ,  F16C7/08 ,  F16C2326/05 ,  Y10T29/49622

摘要： Disclosed herein is a suspension arm component for vehicles with sufficient strength or rigidity to withstand repetitive compressive and tensile forces, and a method for manufacturing such a component by pressing or hemming process alone, without recourse to any welding process, forming quickly and simply, a process with advantages in terms of material yield and cost. The suspension arm component for vehicles includes first flange pieces as well as second flange pieces, and a pair of half members, each having a hat-like shaped cross-section perpendicular to its axis, are joined together to protrude the first flange part and the second flange part from an expanded part, where both the first flange part and the second flange part extend linearly along the axis of the main body part. The main body part presents a rectangular shape in its side view.

摘要翻译： 本文公开了一种用于具有足够的强度或刚度以抵抗重复的压缩和拉伸力的车辆的悬架臂部件，以及用于通过单独的压制或折边加工来制造这种部件的方法，而不需要任何焊接工艺，快速且简单地形成 在材料产量和成本方面具有优势。 用于车辆的悬挂臂部件包括第一凸缘部件和第二凸缘部件，并且每个具有与其轴线垂直的帽状截面的一对半部件接合在一起以使第一凸缘部分和 第二凸缘部分从膨胀部分开始，其中第一凸缘部分和第二凸缘部分都沿着主体部分的轴线线性地延伸。 主体部分的侧视图呈现矩形。

公开(公告)号：US20130168739A1

公开(公告)日：2013-07-04

申请号：US13824248

申请日：2011-07-06

申请人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

发明人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.

摘要翻译： 提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。 半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

公开(公告)号：US08420419B2

公开(公告)日：2013-04-16

申请号：US13404310

申请日：2012-02-24

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。