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37 条记录 (耗时 0.026 秒)

    METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
    25.
    发明申请
    METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
    制造非易失性半导体存储器件和非易失性半导体存储器件的方法

    公开(公告)号：US20130075805A1

    公开(公告)日：2013-03-28

    申请号：US13419984

    申请日：2012-03-14

    申请人： Mitsuru SATO ,  Megumi ISHIDUKI ,  Masaru KIDOH ,  Atsushi KONNO ,  Yoshihiro AKUTSU ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA

    发明人： Mitsuru SATO ,  Megumi ISHIDUKI ,  Masaru KIDOH ,  Atsushi KONNO ,  Yoshihiro AKUTSU ,  Masaru KITO ,  Yoshiaki FUKUZUMI ,  Ryota KATSUMATA

    IPC分类号： H01L29/792 ,  H01L21/425

    CPC分类号： H01L29/7926 ,  H01L21/265 ,  H01L27/11582 ,  H01L29/0676 ,  H01L29/66833

    摘要： According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.

    摘要翻译： 根据一个实施例，一种用于制造非易失性半导体存储装置的方法包括： 形成第一和第二堆叠体; 形成穿过所述第一层叠体的通孔，与所述第一部分连通并穿过选择栅极的第二部分，以及与所述第二部分连通并穿透第二绝缘层的第三部分; 形成记忆膜，栅极绝缘膜和通道体; 在通道体内形成第三绝缘层; 在第三部分内部的边界部分上方形成第一嵌入部分; 通过去除第三部分中的第一嵌入部分和第三绝缘层的一部分的一部分来暴露通道体; 以及在所述第三部分内部嵌入包含比所述第一嵌入部分上方的所述第一嵌入部分杂质浓度高的硅的第二嵌入部分。

    Semiconductor Device and Method for Fabricating Semiconductor Device
    26.
    发明申请
    Semiconductor Device and Method for Fabricating Semiconductor Device 有权
    用于制造半导体器件的半导体器件和方法

    公开(公告)号：US20080087957A1

    公开(公告)日：2008-04-17

    申请号：US11868051

    申请日：2007-10-05

    申请人： Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDOH ,  Masaru KITO

    发明人： Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDOH ,  Masaru KITO

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/49 ,  H01L29/6659 ,  H01L29/7833

    摘要： According to an aspect of the present invention, there is provided a semiconductor device including a first conductive type semiconductor substrate, a gate electrode formed over the semiconductor substrate via a gate insulator, a first conductive impurity region buried in the semiconductor substrate, the first conductive impurity region being both sides of an extend plane, the extend plane being extended from side-walls of the gate electrode into the semiconductor substrate and a second conductive type source/drain region partially overlapping with the first conductive impurity region and extending from an end of the gate electrode at the semiconductor substrate to an outer region in the semiconductor substrate, wherein a first conductive impurity concentration at a prescribed depth in the overlapping portion between the first conductive impurity region and the source/drain region is lower than the first conductive impurity concentration in the first conductive impurity region except the overlapping portion corresponding to the prescribed depth.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括第一导电型半导体衬底，通过栅绝缘体形成在半导体衬底上的栅电极，埋在半导体衬底中的第一导电杂质区，第一导电 杂质区域是延伸平面的两侧，所述延伸平面从所述栅电极的侧壁延伸到所述半导体衬底中，以及与所述第一导电杂质区域部分重叠并从所述第一导电杂质区域的一端延伸的第二导电型源极/ 半导体衬底上的栅极电极到半导体衬底中的外部区域，其中在第一导电杂质区域和源极/漏极区域之间的重叠部分中在规定深度处的第一导电杂质浓度低于第一导电杂质浓度 在除t外的第一导电杂质区 他的重叠部分对应于规定的深度。

    Semiconductor Device and Manufacturing Method Thereof
    27.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 失效
    半导体器件及其制造方法

    公开(公告)号：US20080017922A1

    公开(公告)日：2008-01-24

    申请号：US11688449

    申请日：2007-03-20

    申请人： Masaru KITO ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH

    发明人： Masaru KITO ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/0605 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/12

    摘要： A semiconductor device having a first semiconductor region and second semiconductor region including impurities formed on an insulating layer formed on a semiconductor substrate, an insulator formed between the first semiconductor region and the second semiconductor region, a first impurity diffusion control film formed on the first semiconductor region and a second impurity diffusion control film formed on the second semiconductor region, a channel layer formed on the first impurity diffusion control film and second impurity diffusion film to cross at right angles with a direction where the first semiconductor region and the second semiconductor region are extended, a gate insulating film formed on the channel layer and a gate electrode formed on the gate insulating layer.

    摘要翻译： 一种具有第一半导体区域和第二半导体区域的半导体器件，所述第二半导体区域包括形成在形成于半导体衬底上的绝缘层上的杂质，形成在所述第一半导体区域和所述第二半导体区域之间的绝缘体，形成在所述第一半导体 区域和形成在第二半导体区域上的第二杂质扩散控制膜，形成在第一杂质扩散控制膜和第二杂质扩散膜上的沟道层，以与第一半导体区域和第二半导体区域的方向成直角交叉 扩展了形成在沟道层上的栅极绝缘膜和形成在栅极绝缘层上的栅电极。

    Semiconductor Device and Manufacturing Method Thereof
    28.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 失效
    半导体器件及其制造方法

    公开(公告)号：US20100295116A1

    公开(公告)日：2010-11-25

    申请号：US12850783

    申请日：2010-08-05

    申请人： Masaru KITO ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH

    发明人： Masaru KITO ,  Hideaki AOCHI ,  Ryota KATSUMATA ,  Masaru KIDOH

    IPC分类号： H01L29/792

    CPC分类号： H01L27/0605 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/12

    摘要： A semiconductor device having a first semiconductor region and second semiconductor region including impurities formed on an insulating layer formed on a semiconductor substrate, an insulator formed between the first semiconductor region and the second semiconductor region, a first impurity diffusion control film formed on the first semiconductor region and a second impurity diffusion control film formed on the second semiconductor region, a channel layer formed on the first impurity diffusion control film and second impurity diffusion film to cross at right angles with a direction where the first semiconductor region and the second semiconductor region are extended, a gate insulating film formed on the channel layer and a gate electrode formed on the gate insulating layer.

    摘要翻译： 一种具有第一半导体区域和第二半导体区域的半导体器件，所述第二半导体区域包括形成在形成于半导体衬底上的绝缘层上的杂质，形成在所述第一半导体区域和所述第二半导体区域之间的绝缘体，形成在所述第一半导体 区域和形成在第二半导体区域上的第二杂质扩散控制膜，形成在第一杂质扩散控制膜和第二杂质扩散膜上的沟道层，以与第一半导体区域和第二半导体区域的方向成直角交叉 扩展了形成在沟道层上的栅极绝缘膜和形成在栅极绝缘层上的栅电极。

    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    29.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20100052042A1

    公开(公告)日：2010-03-04

    申请号：US12561451

    申请日：2009-09-17

    申请人： Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDO ,  Masaru KITO ,  Mitsuru SATO

    发明人： Hiroyasu TANAKA ,  Ryota KATSUMATA ,  Hideaki AOCHI ,  Masaru KIDO ,  Masaru KITO ,  Mitsuru SATO

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L29/792 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7881 ,  H01L29/7926

    摘要： The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.

    摘要翻译： 本发明的半导体存储器件包括具有串联连接的多个电可再编程存储器单元的多个存储器串，具有列形半导体的存储器串，形成在柱状半导体周围的第一绝缘膜，电荷累积层 形成在第一绝缘膜周围，形成在电荷累积膜周围的第二绝缘膜和围绕第二绝缘膜形成的多个电极，经由多个选择晶体管连接到存储器串的一端的位线，以及导电 分别在存储器串的多个电极和不同的存储器串的多个电极中分别共享，其中导电层的每个端部在平行于位线的方向上形成为台阶形状 。

    SHIFT REGISTER MEMORY AND METHOD OF MANUFACTURING THE SAME
    30.
    发明申请
    SHIFT REGISTER MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
    移位寄存器及其制造方法

    公开(公告)号：US20130020627A1

    公开(公告)日：2013-01-24

    申请号：US13409652

    申请日：2012-03-01

    申请人： Yoshiaki FUKUZUMI ,  Masaru KITO ,  Tomoko FUJIWARA ,  Kaori KAWASAKI ,  Hideaki AOCHI

    发明人： Yoshiaki FUKUZUMI ,  Masaru KITO ,  Tomoko FUJIWARA ,  Kaori KAWASAKI ,  Hideaki AOCHI

    IPC分类号： H01L29/788 ,  H01L21/28

    CPC分类号： H01L21/84 ,  G11C19/00 ,  H01L27/10 ,  H01L27/11517 ,  H01L27/1203

    摘要： In one embodiment, a shift register memory includes first and second control electrodes extending in a first direction parallel to a surface of a substrate, and facing each other in a second direction perpendicular to the first direction. The memory further includes a plurality of first floating electrodes provided in a line on a first control electrode side between the first and second control electrodes. The memory further includes a plurality of second floating electrodes provided in a line on a second control electrode side between the first and second control electrodes. Each of the first and second floating electrodes has a planar shape which is mirror-asymmetric with respect to a plane perpendicular to the first direction.

    摘要翻译： 在一个实施例中，移位寄存器存储器包括在平行于衬底表面的第一方向上延伸的第一和第二控制电极，并且在垂直于第一方向的第二方向上彼此面对。 存储器还包括设置在第一和第二控制电极之间的第一控制电极侧的一行中的多个第一浮置电极。 存储器还包括设置在第一和第二控制电极之间的第二控制电极侧的一行中的多个第二浮置电极。 第一和第二浮动电极中的每一个具有相对于垂直于第一方向的平面镜像不对称的平面形状。