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    MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF FORMATION
    21.
    发明申请
    MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF FORMATION 审中-公开
    磁记忆体，半导体器件和形成方法

    公开(公告)号：US20160268337A1

    公开(公告)日：2016-09-15

    申请号：US15162119

    申请日：2016-05-23

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

    CPC classification number: H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

    Abstract translation: 磁性电池包括磁性，二次氧化物和吸气剂种子区域。 在形成期间，由于吸气剂物质引起的化学亲和力，扩散物质从前体磁性材料转移到吸气剂种子区域。 磁性材料的耗尽使得耗尽的磁性材料能够通过晶体结构从邻近的结晶材料传播而结晶，而不会受到现在富集的吸气剂种子区域的干扰。 这促进了高隧道磁阻和高磁各向异性强度。 在形成期间，由于由另一吸气剂物质引起的化学亲和力，另外的扩散物质从前体氧化物材料转移到吸气剂种子区域。 氧化物材料的耗尽使电池结构中的电阻降低和阻尼减小。 还公开了制造方法和半导体器件。

    MAGNETIC MEMORY CELLS AND METHODS OF FABRICATION
    22.
    发明申请
    MAGNETIC MEMORY CELLS AND METHODS OF FABRICATION 有权
    磁记忆细胞和制造方法

    公开(公告)号：US20160163963A1

    公开(公告)日：2016-06-09

    申请号：US15045865

    申请日：2016-02-17

    Applicant: Micron Technology, Inc.

    Inventor： Roy E. Meade ,  Sumeet C. Pandey ,  Gurtej S. Sandhu

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

    Abstract translation: 磁性电池包括磁性隧道结，其包括具有六方晶系结构的磁性和非磁性材料。 六方晶体结构通过靠近磁性隧道结的种子材料实现，其表现出与磁性隧道结相邻的磁性材料的六方晶体结构相匹配的六方晶系结构。 在一些实施方案中，种子材料邻近无定形基底材料形成，使得种子材料能够以六方晶体结构形成。 在一些实施方案中，磁性电池包括六方钴（h-Co）游离和固定区域以及与h-Co相邻的六方锌（h-Zn）种子区域的六方氮化硼（h-BN）隧道势垒区。 磁性单元的结构能够实现高隧道磁阻，高磁各向异性强度和低阻尼。 还公开了制造方法和半导体器件。

    MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES
    23.
    发明申请
    MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES 有权
    存储单元，制造方法和半导体器件

    公开(公告)号：US20150303372A1

    公开(公告)日：2015-10-22

    申请号：US14256655

    申请日：2014-04-18

    Applicant: Micron Technology, Inc.

    Inventor： Roy E. Meade ,  Sumeet C. Pandey ,  Gurtej S. Sandhu

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

    Abstract translation: 磁性电池包括磁性隧道结，其包括具有六方晶系结构的磁性和非磁性材料。 六方晶体结构通过靠近磁性隧道结的种子材料实现，其表现出与磁性隧道结相邻的磁性材料的六方晶系结构相匹配的六方晶系结构。 在一些实施方案中，种子材料邻近无定形基底材料形成，使得种子材料能够以六方晶体结构形成。 在一些实施方案中，磁性电池包括六方钴（h-Co）游离和固定区域以及与h-Co相邻的六方锌（h-Zn）种子区域的六方氮化硼（h-BN）隧道势垒区。 磁性单元的结构能够实现高隧道磁阻，高磁各向异性强度和低阻尼。 还公开了制造方法和半导体器件。

    SEMICONDUCTOR GRAPHENE STRUCTURES, METHODS OF FORMING SUCH STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES
    24.
    发明申请
    SEMICONDUCTOR GRAPHENE STRUCTURES, METHODS OF FORMING SUCH STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES 有权
    半导体石墨结构，形成这种结构的方法和包括这种结构的半导体器件

    公开(公告)号：US20150034908A1

    公开(公告)日：2015-02-05

    申请号：US14521088

    申请日：2014-10-22

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Roy E. Meade ,  Sumeet C. Pandey

    IPC: H01L29/16 ,  H01L21/02 ,  H01L27/092 ,  H01L29/165 ,  H01L29/78

    CPC classification number: H01L29/1606 ,  H01L21/02175 ,  H01L21/02527 ,  H01L21/02664 ,  H01L27/092 ,  H01L29/165 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/78 ,  Y02E10/50

    Abstract: A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.

    Abstract translation: 半导体石墨烯结构可以包括在石墨烯材料的至少一部分上的石墨烯材料和石墨烯 - 晶格匹配材料，其中所述石墨烯 - 晶格匹配材料具有在晶格常数的倍数的约±5％内的晶格常数，或 石墨烯材料的粘结长度。 半导体石墨烯结构可以具有至少约0.5eV的能带隙。 修饰石墨烯材料的能带隙的方法可包括在石墨烯材料的至少一部分上形成石墨烯 - 晶格匹配材料，所述石墨烯 - 晶格匹配材料的晶格常数在约±5％ 石墨烯材料的晶格常数或键长度。

    Memory Cells and Methods of Making Memory Cells
    26.
    发明申请
    Memory Cells and Methods of Making Memory Cells 有权

    公开(公告)号：US20140011322A1

    公开(公告)日：2014-01-09

    申请号：US14024836

    申请日：2013-09-12

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

    IPC: H01L45/00

    CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

    Memory Circuitry Comprising Strings Of Memory Cells
    27.
    发明公开
    Memory Circuitry Comprising Strings Of Memory Cells 审中-公开

    公开(公告)号：US20230317800A1

    公开(公告)日：2023-10-05

    申请号：US17712776

    申请日：2022-04-04

    Applicant: Micron Technology, Inc.

    Inventor： Dhirendra Dhananjay Vaidya ,  Lei Wei ,  Gurpreet Lugani ,  Sumeet C. Pandey

    IPC: H01L29/40 ,  H01L27/11556 ,  H01L27/11582

    CPC classification number: H01L29/402 ,  H01L27/11556 ,  H01L27/11582

    Abstract: Memory circuitry comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from a memory-array region into a stair-step region. Strings of memory cells comprise operative channel-material strings that extend through the insulative tiers and the conductive tiers in individual of the laterally-spaced memory blocks in the memory-array region. The operative channel-material strings directly electrically couple with conductor material of the conductor tier. The individual laterally-spaced memory blocks comprise an intermediate region between the operative channel-material strings and the stair-step region. A dummy through-array-via (TAV) extends through the insulative tiers and the conductive tiers in the intermediate region in the individual laterally-spaced memory blocks. The dummy TAV is directly electrically coupled with the operative channel-material strings in its memory block. Other embodiments are disclosed.

    ELECTRONIC SYSTEMS INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES
    28.
    发明申请
    ELECTRONIC SYSTEMS INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES 有权

    公开(公告)号：US20220344160A1

    公开(公告)日：2022-10-27

    申请号：US17811426

    申请日：2022-07-08

    Applicant: Micron Technology, Inc

    Inventor： Roy E. Meade ,  Sumeet C. Pandey

    IPC: H01L21/268 ,  H01L21/428 ,  H01L21/02 ,  H01L21/477 ,  H01L29/06

    Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

    METHODS OF FORMING ELECTRONIC DEVICES
    29.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES 有权

    公开(公告)号：US20220158086A1

    公开(公告)日：2022-05-19

    申请号：US17649771

    申请日：2022-02-02

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

    IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

    Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attractor species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attractor species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

    Integrated assemblies having metal-containing regions coupled with semiconductor regions
    30.
    发明授权
    Integrated assemblies having metal-containing regions coupled with semiconductor regions 有权

    公开(公告)号：US11101218B2

    公开(公告)日：2021-08-24

    申请号：US16112333

    申请日：2018-08-24

    Applicant: Micron Technology, Inc.

    Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu

    IPC: H01L23/535 ,  H01L27/108 ,  H01L23/532 ,  H01L29/08

    Abstract: Some embodiments include an integrated assembly which has a semiconductor material with a surface. A first layer is over and directly against the surface. The first layer includes oxygen and a first metal. The relative amount of oxygen to the first metal is less than or equal to an amount sufficient to form stoichiometric metal oxide throughout the first layer. A second metal is over and directly against the first layer. A second layer is over and directly against the second metal. The second layer includes nitrogen and a third metal. Some embodiments include an integrated assembly which has a semiconductor material with a surface. A metal is adjacent the surface and is spaced from the surface by a distance of less than or equal to about 10 Å. There is no metal germanide or metal silicide between the metal and the surface.

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