公开(公告)号：US06404029B1

公开(公告)日：2002-06-11

申请号：US09656461

申请日：2000-09-06

申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

IPC分类号： H01L2714

CPC分类号： H01L27/1443 ,  H01L31/0352

摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

公开(公告)号：US5602415A

公开(公告)日：1997-02-11

申请号：US458772

申请日：1995-06-02

申请人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

发明人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/00

CPC分类号： H01L27/1443

摘要： A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

摘要翻译： 一种光接收装置，包括第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底上的第二导电类型的第一半导体层; 以及第一导电类型的半导体层，其从第二导电类型的第一半导体衬底的表面延伸到达第一导电类型的半导体衬底的表面，半导体层将第二半导体层的第二导电率 形成第二导电类型的多个半导体区域。 与第一导电类型的半导体衬底重叠的第一导电类型的半导体层的部分形成为第一导电类型的半导体区域并且具有高杂质密度。 第二导电类型的半导体区域和在这种区域之下的第一导电类型的半导体衬底形成用于检测信号光的多个光检测光电二极管部分。 该器件还包括第二导电类型的第二半导体层，其被埋在构成每个光检测光电二极管部分的第一导电类型的半导体衬底的一部分中。

公开(公告)号：US08258706B2

公开(公告)日：2012-09-04

申请号：US12539241

申请日：2009-08-11

申请人： Yasuhiro Maruyama ,  Hiroyuki Shoji ,  Mitsuru Mariyama ,  Masakazu Ikeda ,  Hirohisa Warita ,  Katsumi Inaba ,  Naoki Fukunaga

发明人： Yasuhiro Maruyama ,  Hiroyuki Shoji ,  Mitsuru Mariyama ,  Masakazu Ikeda ,  Hirohisa Warita ,  Katsumi Inaba ,  Naoki Fukunaga

IPC分类号： H05B37/00 ,  H05B41/00

CPC分类号： H05B33/0815 ,  H05B33/0803 ,  H05B33/0824

摘要： An LED drive circuit is an LED dive circuit that receives an alternating voltage to drive an LED, and includes a current remove portion that removes a current from a current supply line that supplies an LED drive current to the LED. If an input current to the LED drive circuit is an unnecessary current, the LED does not light because of current removal by the current remove portion. If the input current to the LED drive circuit turns into the LED drive current from the unnecessary current, the current remove portion decreases the amount of current removed.

摘要翻译： LED驱动电路是接收交流电压以驱动LED的LED潜水电路，并且包括电流去除部分，该电流去除部分从电流供应线路去除LED驱动电流到LED的电流。 如果到LED驱动电路的输入电流是不需要的电流，则由于电流去除部分的电流去除，LED不亮。 如果LED驱动电路的输入电流从不需要的电流变成LED驱动电流，则电流去除部分减少去除的电流量。

公开(公告)号：US20100176418A1

公开(公告)日：2010-07-15

申请号：US12065172

申请日：2007-11-08

申请人： Noritaka Muraki ,  Naoki Fukunaga

发明人： Noritaka Muraki ,  Naoki Fukunaga

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

摘要翻译： 本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。 本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧） 层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。

公开(公告)号：US6114740A

公开(公告)日：2000-09-05

申请号：US944101

申请日：1997-09-30

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  A01L31/06 ,  H01L31/00

CPC分类号： H01L27/144 ,  H01L31/02024

摘要： The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.

摘要翻译： 本发明的电路集成光接收元件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第二导电类型的第一半导体层; 第一导电类型的第一半导体层，用于将第一半导体层分成第二导电类型的半导体区域; 光检测部分由半导体衬底的划分的半导体区域和下面的区域构成，由光检测部分组成的分隔光电二极管; 第二导电类型的第二半导体层仅形成在用作分隔光电二极管的分割部分的第一导电类型的第一半导体层附近并且在形成各个光检测部分的半导体衬底的区域内; 以及第一导电类型的第二半导体层，形成在包括分隔部分的第二导电类型的第一半导体层的表面区域中，以覆盖第二导电类型的第二半导体层的上部。

公开(公告)号：US6005278A

公开(公告)日：1999-12-21

申请号：US12820

申请日：1998-01-23

申请人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

发明人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14643

摘要： A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.

摘要翻译： 分光电二极管包括半导体衬底; 形成在所述半导体衬底的表面上的半导体层; 以及形成在所述半导体层中的多个区域中的多个隔离扩散区域，以分别从与所述半导体衬底的表面接触的其他表面的所述半导体层的表面延伸并到达所述半导体衬底的表面下方的区域 表面，从而将半导体层分成至少三个半导体区域。 除了通过隔离部分彼此相邻的多个半导体区域的组合中的位于隔离部分中的特定一个隔离扩散区域之外，第一掩埋扩散区域进一步形成，并且， 通过施加反向偏压，在另一个隔离扩散区域下的区域中的半导体衬底被抑制。

公开(公告)号：US06593165B2

公开(公告)日：2003-07-15

申请号：US10152732

申请日：2002-05-23

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

IPC分类号： H01L2100

CPC分类号： H01L27/144

摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

公开(公告)号：US06313484B1

公开(公告)日：2001-11-06

申请号：US09472886

申请日：1999-12-28

申请人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

发明人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

IPC分类号： H01L2715

CPC分类号： H01L27/1443

摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.

摘要翻译： 本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层 位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。 第一区域位于光接收装置部分中。 在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

公开(公告)号：US6049117A

公开(公告)日：2000-04-11

申请号：US717347

申请日：1996-09-20

申请人： Naoki Fukunaga ,  Masaru Kubo

发明人： Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L31/00 ,  H01L29/80 ,  H01L31/06 ,  H01L31/112

CPC分类号： H01L31/103 ,  H01L27/1446 ,  H01L31/035281 ,  H01L31/1876 ,  Y02E10/50

摘要： A light-receiving element includes a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed in a predetermined region on a surface of the semiconductor substrate of the first conductivity type; and at least one semiconductor region of the first conductivity type which is formed so as to extend from an upper surface of the first semiconductor layer of the second conductivity type to the surface of the semiconductor substrate of the first conductivity type, thereby dividing the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. In the light-receiving element, a specific resistance of the semiconductor substrate of the first conductivity type is set in a predetermined range such that a condition Xd.gtoreq.Xj is satisfied between a depth Xd of a depletion layer to be formed in the semiconductor substrate of the first conductivity type upon an application of an inverse bias and a diffusion depth Xj of the semiconductor region of the first conductivity type into the semiconductor substrate of the first conductivity type.

摘要翻译： 光接收元件包括第一导电类型的半导体衬底; 第一导电类型的第一半导体层，形成在第一导电类型的半导体衬底的表面上的预定区域中; 以及形成为从第二导电类型的第一半导体层的上表面延伸到第一导电类型的半导体衬底的表面的第一导电类型的至少一个半导体区域，从而将第一半导体 第二导电类型的层形成第二导电类型的多个半导体区域。 在光接收元件中，将第一导电类型的半导体衬底的电阻率设定在预定范围内，使得在半导体中要形成的耗尽层的深度Xd之间满足条件Xd> / = Xj 在第一导电类型的半导体衬底中施加反向偏置和第一导电类型的半导体区域的扩散深度Xj的第一导电类型的衬底。

公开(公告)号：US07947995B2

公开(公告)日：2011-05-24

申请号：US12065172

申请日：2007-11-08

申请人： Noritaka Muraki ,  Naoki Fukunaga

发明人： Noritaka Muraki ,  Naoki Fukunaga

IPC分类号： H01L33/20

CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

摘要翻译： 本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。 本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧） 层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。