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公开(公告)号:US20060058487A1
公开(公告)日:2006-03-16
申请号:US11215303
申请日:2005-08-31
申请人: Juha Rantala , Jyri Paulasaari , Janne Kylma , Turo Tormanen , Jarkko Pietikainen , Nigel Hacker , Admir Hadzic
发明人: Juha Rantala , Jyri Paulasaari , Janne Kylma , Turo Tormanen , Jarkko Pietikainen , Nigel Hacker , Admir Hadzic
CPC分类号: C09D183/14 , C08G77/50 , H01B3/46 , H01L21/02126 , H01L21/02282 , H01L21/3122 , H01L21/76822 , H01L21/76837 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要: A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.
摘要翻译: 一种薄膜,其包含通过聚合具有式I的单体获得的组合物:
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公开(公告)号:US20050116347A1
公开(公告)日:2005-06-02
申请号:US11022063
申请日:2004-12-22
申请人: Nigel Hacker
发明人: Nigel Hacker
IPC分类号: B05D5/12 , B05D7/24 , C01B33/113 , C07F7/12 , C08G77/24 , C09D4/00 , C09D183/08 , C23C16/40 , H01L21/312 , H01L21/316 , H01L29/40 , H01L23/48
CPC分类号: H01L21/31629 , C01B33/113 , C09D4/00 , C09D183/08 , C23C16/401 , H01L21/02131 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/3124 , Y10T428/249969 , Y10T428/31663 , C08G77/24
摘要: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
摘要翻译: 提供了氟取代的倍半硅氧烷薄膜前体的阵列,其具有氟基与倍半硅氧烷笼的硅原子结合的结构。 在第一方面,本发明提供了一种组合物,其包含具有式[F-SiO 1 H 1/2] x H 2 SiO 1/2的汽化材料 其中x + y = n,n是2和30之间的整数,x是1与n之间的整数,y是0与n之间的整数。 还提供了由这些前体制成的膜和包含这些膜的物体。
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