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99 条记录 (耗时 0.028 秒)

    Revolution detecting device
    21.
    发明授权
    Revolution detecting device 有权

    公开(公告)号：US06661225B2

    公开(公告)日：2003-12-09

    申请号：US10348187

    申请日：2003-01-22

    申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

    发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

    IPC分类号： G11B5147

    CPC分类号： G01D5/145 ,  B82Y25/00 ,  G01P3/487 ,  G01R33/093

    摘要： In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element. The surface portion is formed with S poles and N poles which are alternately arranged. In the revolution detecting device, a magnet is disposed in a vicinity of the element and generating the magnetic field and a direction of the magnetic field is substantially parallel to the Y axis at a center portion of the element. When the revolution member revolves, the S poles and N poles are configured to move substantially in parallel to the X axis on the Y axis determined by the element.

    Pressure detecting apparatus with metallic diaphragm
    22.
    发明授权
    Pressure detecting apparatus with metallic diaphragm 有权
    带金属隔膜的压力检测装置

    公开(公告)号：US06595065B2

    公开(公告)日：2003-07-22

    申请号：US09492605

    申请日：2000-01-27

    申请人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

    发明人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

    IPC分类号： G01L904

    CPC分类号： G01L9/0055

    摘要： A pressure detecting apparatus has a single-crystal semiconductor sensor chip disposed on a metallic diaphragm through a low melting point glass. The sensor chip has a planar shape selected from a circular shape, a first polygonal shape having more than five sides and having interior angles all less than 180°, and a second polygonal shape having a ratio of a circumscribed circle diameter relative to an inscribed circle diameter being less than 1.2. Four strain gauge resistors are disposed on X, Y axes passing through a center point O of the sensor chip in parallel with directions. Accordingly, thermal stress is reduced not to adversely affect a detection error and simultaneously high sensitivity is provided.

    摘要翻译： 压力检测装置具有通过低熔点玻璃设置在金属隔膜上的单晶半导体传感器芯片。 传感器芯片具有选自圆形，多于五边的第一多边形和内角全部小于180°的平面形状，以及具有相对于内切圆的外接圆直径的比率的第二多边形 直径小于1.2。 四个应变计电阻器设置在X，Y轴上，与<110>方向平行地穿过传感器芯片的中心点O。 因此，热应力降低，不会不利地影响检测误差，同时提供高灵敏度。

    Magnetic sensor and manufacturing method therefor
    28.
    发明授权
    Magnetic sensor and manufacturing method therefor 有权
    磁传感器及其制造方法

    公开(公告)号：US06734671B2

    公开(公告)日：2004-05-11

    申请号：US10091592

    申请日：2002-03-07

    申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

    发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

    IPC分类号： G01R3309

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L27/22

    摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

    摘要翻译： 在由硅制成的衬底的绝缘表面上形成磁阻器件。 这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。 形成用于钝化的绝缘膜以覆盖器件和布线层。 通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。 在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。 优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。

    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
    29.
    发明授权
    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
    半导体衬底制造方法，半导体压力传感器及其制造方法

    公开(公告)号：US06388279B1

    公开(公告)日：2002-05-14

    申请号：US09095131

    申请日：1998-06-10

    申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    IPC分类号： H01L2720

    CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

    摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

    摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。