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    Acceleration sensor having coaxially-arranged fixed electrode and movable electrode
    3.
    发明授权
    Acceleration sensor having coaxially-arranged fixed electrode and movable electrode 失效
    具有同轴布置的固定电极和可动电极的加速度传感器

    公开(公告)号：US5864064A

    公开(公告)日：1999-01-26

    申请号：US717405

    申请日：1996-09-20

    申请人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

    发明人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

    IPC分类号： G01P15/00 ,  G01H1/00 ,  G01P15/02 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/135 ,  G01P15/18

    摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

    摘要翻译： 一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。 考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度 非定向平面。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    4.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Method of manufacturing dynamic amount semiconductor sensor
    6.
    发明授权
    Method of manufacturing dynamic amount semiconductor sensor 失效
    动态量半导体传感器的制造方法

    公开(公告)号：US6048774A

    公开(公告)日：2000-04-11

    申请号：US103935

    申请日：1998-06-25

    申请人： Toshimasa Yamamoto ,  Nobuyuki Kato ,  Kazuhiko Kano ,  Makiko Sugiura

    发明人： Toshimasa Yamamoto ,  Nobuyuki Kato ,  Kazuhiko Kano ,  Makiko Sugiura

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P15/13

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

    摘要： In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.

    摘要翻译： 在制造分别由基板的锚定部支撑的梁结构和固定电极的动态量传感器的制造方法中，在要形成锚定部的第一半导体基板上形成开口部。 每个开口部分由多个条状开口组成。 然后在第一半导体衬底上依次形成用于形成锚定部分的第一薄膜和第二薄膜。 在第二薄膜的表面被抛光之后，第二半导体衬底被结合到第二薄膜的抛光表面上。 在该方法中，由于开口部分由多个条状开口组成，所以第二薄膜在其上没有任何步骤而变平。

    Semiconductor dynamic quantity sensor
    7.
    发明申请
    Semiconductor dynamic quantity sensor 审中-公开
    半导体动量传感器

    公开(公告)号：US20050001275A1

    公开(公告)日：2005-01-06

    申请号：US10849259

    申请日：2004-05-20

    申请人： Makiko Sugiura ,  Kazuhiko Kano

    发明人： Makiko Sugiura ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P15/08 ,  H01L27/14 ,  H01L29/84

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

    摘要： An acceleration sensor comprising a spring portion joined to the base portion of a semiconductor substrate and elastically displaced in Y-direction in accordance with an applied acceleration, movable electrodes joined to the spring portion, fixed electrodes disposed to face the movable electrodes and adjusting electrodes for adjusting the spring constant of the spring portion. The spring portion has a pair of beams facing each other in the Y-direction, and is elastically deformed so that the interval between the pair of beams is varied. The adjusting electrodes are respectively equipped at the outside of one of the paired beams and at the outside of the other beam, and electrostatic force can be applied by the adjusting electrodes so that the paired beams are separated from each other.

    摘要翻译： 一种加速度传感器，包括：接合到半导体基板的基部的弹簧部分，并且根据施加的加速度在Y方向上弹性位移;连接到弹簧部分的可动电极;设置成面对可动电极的固定电极;以及用于 调节弹簧部分的弹簧常数。 弹簧部分具有在Y方向上彼此面对的一对梁，并且弹性变形，使得一对梁之间的间隔变化。 调整电极分别配置在成对梁中的一个的外侧并且在另一个梁的外侧，并且可以通过调节电极施加静电力，使得成对的光束彼此分离。

    Semiconductor acceleration sensor with movable electrode
    9.
    发明授权
    Semiconductor acceleration sensor with movable electrode 失效
    具有可移动电极的半导体加速度传感器

    公开(公告)号：US5572057A

    公开(公告)日：1996-11-05

    申请号：US360940

    申请日：1994-12-21

    申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

    摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

    摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解

    Semiconductor type yaw rate sensor
    10.
    发明授权
    Semiconductor type yaw rate sensor 失效
    半导体型偏航率传感器

    公开(公告)号：US6028332A

    公开(公告)日：2000-02-22

    申请号：US106018

    申请日：1998-06-29

    申请人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

    发明人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

    IPC分类号： G01L1/18 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

    摘要： A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.

    摘要翻译： 半导体型偏航率传感器具有基板，由半导体材料形成的梁结构，并且具有设置在基板上的至少一个锚固部分，位于基板上方的预定间隙的加权部分以及从基板延伸的梁部分 锚固部分​​并支撑加权部分。 可移动电极形成在加权部分上，并且固定电极以固定电极面向可动电极的方式形成在基板上。 当在可动电极和固定电极之间施加驱动电压时，梁结构被强制地沿相对于基板表面的水平方向振动。 在该横摆率传感器中，在梁部形成有用于监视梁结构的强制振动的应变仪。 结果，可以以简单的结构监视梁结构的强制振动。