公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US06653702B2

公开(公告)日：2003-11-25

申请号：US09866752

申请日：2001-05-30

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Kazuaki Hamamoto ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Kazuaki Hamamoto ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： H01L27/1203 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0778 ,  G01L9/0054 ,  G01L9/06 ,  H01L21/84

摘要： A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.

摘要翻译： 半导体压力传感器包括由第一和第二硅衬底构成的SOI衬底。 隔膜部分由第一硅衬底形成为形成在第二硅衬底中的凹部的底部。 应变计形成在隔膜部分上，并且电路部分在隔膜部分以外的区域形成在第一硅衬底上。 在隔膜部分的最外周部分的外侧的第一硅基板上形成用于将应变计与电路部分隔离的LOCOS膜。

公开(公告)号：US06422088B1

公开(公告)日：2002-07-23

申请号：US09666085

申请日：2000-09-21

申请人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L900

CPC分类号： G01L27/007 ,  G01D3/08 ,  G01L9/0054 ,  G01L9/02 ,  G01R17/10

摘要： A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

摘要翻译： 参考电压发生电路由电阻器RE和RF构成，每个电阻器不受施加压力的影响。 参考电压产生电路连接在桥接电路的一端和另一端之间。 基于桥电路的两个中点B和C之间的电压差VBC与参考电压产生电路的参考电压电平之间的电压差VCE和VBE的比较，执行桥电路的故障判断， 两个中点B和C.

公开(公告)号：US06521966B1

公开(公告)日：2003-02-18

申请号：US09547457

申请日：2000-04-12

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01068 ,  H01L2924/00014

摘要： A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member. Since another surface of the lead frame is non-contacted with the package member at the opening portion, even if the creep occurs in the package member, it can prevent stress (creep stress) undergone in accordance with the creep deformation from being transferred to the sensor chip.

摘要翻译： 一种半导体应变传感器，其中用于检测应变信号的传感器元件安装在树脂封装构件中，其可以抑制封装构件的蠕变应力对传感器元件的影响。 半导体应变传感器设置有与树脂封装构件一体模制的引线框架和由硅制成的传感器芯片。 传感器芯片安装在引线框架的元件安装部分的一个表面上，并且能够在施加压力时根据应变通过导线从外部输出电信号。 开口部分设置在封装构件中，使得引线框架的另一表面的位于传感器芯片下方的位置的整个区域与封装构件不接触。 由于引线框架的另一表面在开口部处与封装构件不接触，所以即使在封装构件中发生蠕变，也可以防止根据蠕变变形而发生的应力（蠕变应力）被转移到 传感器芯片。

公开(公告)号：US06495389B2

公开(公告)日：2002-12-17

申请号：US09924559

申请日：2001-08-09

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2100

CPC分类号： B81C1/00833 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C2201/0116 ,  B81C2201/019

摘要： In a method for manufacturing a semiconductor pressure sensor, after a reference pressure chamber is formed inside a semiconductor substrate and a diaphragm is formed from a part of the semiconductor substrate, a heat treatment is performed to form an insulation film, an element, or the like on the semiconductor substrate. At that time, a heat treatment temperature is controlled to be lower than (−430P0+1430)° C. where P0 is an internal pressure (atm) of the reference pressure chamber at a room temperature. Accordingly, crystal defects can be prevented from being produced in the diaphragm.

公开(公告)号：US06388279B1

公开(公告)日：2002-05-14

申请号：US09095131

申请日：1998-06-10

申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

IPC分类号： H01L2720

CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

公开(公告)号：US06250165B1

公开(公告)日：2001-06-26

申请号：US09239781

申请日：1999-01-29

申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

IPC分类号： G01L900

CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

公开(公告)号：US5932921A

公开(公告)日：1999-08-03

申请号：US958319

申请日：1997-10-27

申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84

摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

公开(公告)号：US07468933B2

公开(公告)日：2008-12-23

申请号：US11724167

申请日：2007-03-15

申请人： Makiko Sugiura ,  Takahiko Yoshida ,  Inao Toyoda

发明人： Makiko Sugiura ,  Takahiko Yoshida ,  Inao Toyoda

IPC分类号： G01S15/93 ,  G08G1/16

CPC分类号： B60R21/0134 ,  B60R21/013 ,  B60R21/0132 ,  B60R21/01338 ,  B60R21/0136 ,  B60R21/36 ,  B60R2021/01322 ,  G01S15/931 ,  G01S2015/938

摘要： A collision detection device for a vehicle includes a first direction signal outputting unit which detects an intensity of heat ray radiated from a detection object which is near or contacts the vehicle to outputs a first direction signal, a second direction signal outputting unit which detects ultrasound wave sent by a sending member and reflected by the detection object to output a second direction signal, an impact signal outputting unit which detects an impact on the vehicle to output an impact signal, and a control unit. The control unit determines an occurrence of a collision between the vehicle and a human, in the case where it is determined that a difference between the first direction signal and the second direction signal is within a first predetermined range and the impact signal is outputted.

摘要翻译： 一种用于车辆的碰撞检测装置包括：第一方向信号输出单元，其检测从靠近或接触车辆的检测对象辐射的热射线的强度以输出第一方向信号;第二方向信号输出单元，其检测超声波 由发送成员发送并由检测对象反射以输出第二方向信号;冲击信号输出单元，其检测对车辆的影响以输出冲击信号;以及控制单元。 在确定第一方向信号和第二方向信号之间的差在第一预定范围内并且影响信号被输出的情况下，控制单元确定车辆与人之间的碰撞的发生。