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    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
    3.
    发明授权
    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
    半导体衬底制造方法，半导体压力传感器及其制造方法

    公开(公告)号：US06388279B1

    公开(公告)日：2002-05-14

    申请号：US09095131

    申请日：1998-06-10

    申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    IPC分类号： H01L2720

    CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

    摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

    摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

    Semiconductor physical quantity sensor
    4.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06250165B1

    公开(公告)日：2001-06-26

    申请号：US09239781

    申请日：1999-01-29

    申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    IPC分类号： G01L900

    CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

    摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

    Semiconductor physical quantity sensor with stopper portion
    6.
    发明授权
    Semiconductor physical quantity sensor with stopper portion 有权
    具有止动部分的半导体物理量传感器

    公开(公告)号：US6065341A

    公开(公告)日：2000-05-23

    申请号：US209414

    申请日：1998-12-11

    申请人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

    发明人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

    IPC分类号： G01P15/08 ,  G01P15/125

    CPC分类号： B81B3/0051 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  G01P2015/0814

    摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.

    摘要翻译： 可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。 通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。 止动部分通过锚定部电连接到梁部分。 因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

    Sensor chip having a diode portions and a thin-wall portion
    7.
    发明授权
    Sensor chip having a diode portions and a thin-wall portion 失效
    传感器芯片具有二极管部分和薄壁部分

    公开(公告)号：US5932921A

    公开(公告)日：1999-08-03

    申请号：US958319

    申请日：1997-10-27

    申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

    发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

    IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01L9/0042 ,  H01L29/84

    摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

    摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    8.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Pressure sensor
    9.
    发明授权
    Pressure sensor 失效
    压力传感器

    公开(公告)号：US07197939B2

    公开(公告)日：2007-04-03

    申请号：US11046792

    申请日：2005-02-01

    申请人： Minekazu Sakai ,  Yasutoshi Suzuki

    发明人： Minekazu Sakai ,  Yasutoshi Suzuki

    IPC分类号： G01L21/12 ,  G01L9/00

    CPC分类号： G01L9/0054 ,  G01L19/0627 ,  G01L19/0636

    摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

    摘要翻译： 压力传感器包括半导体基板和诸如玻璃基座的基座构件。 半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。 基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。 在压力传感器中，基座构件具有通向该隔膜的压力的通孔。 通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。 因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

    Etching method for silicon substrates and semiconductor sensor
    10.
    发明授权
    Etching method for silicon substrates and semiconductor sensor 失效
    硅衬底和半导体传感器的蚀刻方法

    公开(公告)号：US5949118A

    公开(公告)日：1999-09-07

    申请号：US637128

    申请日：1996-04-24

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

    摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

    摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。