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    Optoelectronic component
    21.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08598604B2

    公开(公告)日：2013-12-03

    申请号：US12088250

    申请日：2006-09-27

    申请人： Dominik Eisert ,  Norbert Linder ,  Raimund Oberschmid ,  Dirk Berben ,  Frank Jermann ,  Martin Zachau

    发明人： Dominik Eisert ,  Norbert Linder ,  Raimund Oberschmid ,  Dirk Berben ,  Frank Jermann ,  Martin Zachau

    IPC分类号： H04N9/31

    CPC分类号： H01L33/46 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

    摘要翻译： 公开了一种具有半导体本体的包括有源半导体层序列的光电子部件，其适于产生从半导体本体的正面发射的第一波长的电磁辐射。 该元件还包括在其发射方向上跟随半导体本体的第一波长转换物质，其将第一波长的辐射转换成不同于第一波长的第二波长的辐射，以及在有源半导体层序列之间的第一选择性反射层 以及选择性地反射第二波长的辐射并对第一波长的辐射透明的第一波长转换物质。

    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
    23.
    发明授权
    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US07816163B2

    公开(公告)日：2010-10-19

    申请号：US12240147

    申请日：2008-09-29

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01L21/00

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Optically pumped semiconductor device
    24.
    发明授权
    Optically pumped semiconductor device 有权
    光泵浦半导体器件

    公开(公告)号：US07778300B2

    公开(公告)日：2010-08-17

    申请号：US11579196

    申请日：2005-04-11

    申请人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18305 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18388 ,  H01S5/32341

    摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

    摘要翻译： 一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源， 在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。 泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层 （2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场 垂直发射极层（3）被抑制。

    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
    26.
    发明授权
    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US07443898B2

    公开(公告)日：2008-10-28

    申请号：US11210263

    申请日：2005-08-23

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01S5/00

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
    27.
    发明授权
    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
    用于制造外延结构元件层序列和光电子半导体芯片的方法

    公开(公告)号：US07317202B2

    公开(公告)日：2008-01-08

    申请号：US10952154

    申请日：2004-09-28

    申请人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    发明人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    IPC分类号： H01L31/00 ,  H01L33/00

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L33/0062

    摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

    摘要翻译： 一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料， 第二组V元件，其不同于第一组V元件。 在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有 不同的组合物彼此并且包含第一和第二组V元素。

    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
    29.
    发明申请
    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
    用于制造外延结构元件层序列和光电子半导体芯片的方法

    公开(公告)号：US20050116242A1

    公开(公告)日：2005-06-02

    申请号：US10952154

    申请日：2004-09-28

    申请人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    发明人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    IPC分类号： H01S5/343 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L21/00 ,  H01L29/22

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L33/0062

    摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

    摘要翻译： 一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料， 第二组V元件，其不同于第一组V元件。 在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有 不同的组合物彼此并且包含第一和第二组V元素。