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    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
    1.
    发明授权
    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
    用于制造外延结构元件层序列和光电子半导体芯片的方法

    公开(公告)号：US07317202B2

    公开(公告)日：2008-01-08

    申请号：US10952154

    申请日：2004-09-28

    申请人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    发明人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    IPC分类号： H01L31/00 ,  H01L33/00

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L33/0062

    摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

    摘要翻译： 一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料， 第二组V元件，其不同于第一组V元件。 在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有 不同的组合物彼此并且包含第一和第二组V元素。

    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
    2.
    发明申请
    Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
    用于制造外延结构元件层序列和光电子半导体芯片的方法

    公开(公告)号：US20050116242A1

    公开(公告)日：2005-06-02

    申请号：US10952154

    申请日：2004-09-28

    申请人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    发明人： Alexander Behres ,  Norbert Linder ,  Bernd Mayer

    IPC分类号： H01S5/343 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L21/00 ,  H01L29/22

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L33/0062

    摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

    摘要翻译： 一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料， 第二组V元件，其不同于第一组V元件。 在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有 不同的组合物彼此并且包含第一和第二组V元素。

    Optoelectronic semiconductor component
    4.
    发明授权
    Optoelectronic semiconductor component 有权
    光电半导体元件

    公开(公告)号：US08502267B2

    公开(公告)日：2013-08-06

    申请号：US13142885

    申请日：2010-01-05

    申请人： Alexander Behres ,  Matthias Sabathil

    发明人： Alexander Behres ,  Matthias Sabathil

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01L2924/00

    摘要： An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.

    摘要翻译： 光电子半导体部件包括发射辐射的有源层，由包覆层包围的有源层，其中包层和/或有源层包括含铟磷化合物半导体材料，并且磷化物半导体材料包含在 元素Bi或Sb中的至少一种作为主要组V的附加元素。

    Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
    7.
    发明申请
    Monolithically integrated laser diode chip having a construction as a multiple beam laser diode 有权
    具有构造为多光束激光二极管的单片集成激光二极管芯片

    公开(公告)号：US20090122823A1

    公开(公告)日：2009-05-14

    申请号：US12217100

    申请日：2008-06-30

    申请人： Martin Muller ,  Gunther Gronninger ,  Alexander Behres

    发明人： Martin Muller ,  Gunther Gronninger ,  Alexander Behres

    IPC分类号： H01S5/026 ,  H01S5/323

    CPC分类号： H01S5/4043 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/4018

    摘要： A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

    摘要翻译： 具有构造为多光束激光二极管的单片集成激光二极管芯片，其在由GaAs构成的半导体衬底（3）上具有至少两个激光堆叠（4a，4b，4c） 每个都包含活动区域（7）。 有源区（7）分别布置在波导层（8）之间。 每个波导层（8）在远离有源区的一侧与包层（6）相邻。 至少一个激光堆叠（4a，4b，4c）的至少一个波导层（8）或覆层（6）包括Al x Ga 1-x As，其中0≤x≤1，以及至少一种附加材料 来自主组III或V，使得包括至少一个附加元件的至少一个波导层（8）或包层（6）与由GaAs构成的半导体衬底（3）之间的晶格失配减小。 这增加了激光二极管芯片的寿命。