Graphite nano-carbon fiber and method of producing the same
    21.
    发明授权
    Graphite nano-carbon fiber and method of producing the same 有权
    石墨纳米碳纤维及其制造方法

    公开(公告)号:US08444948B2

    公开(公告)日:2013-05-21

    申请号:US13204538

    申请日:2011-08-05

    IPC分类号: D01C5/00

    摘要: According to one embodiment, there is provided a graphite nano-carbon fiber provided by using an apparatus having a reactor capable of keeping a reducing atmosphere inside thereof, a metal substrate arranged as a catalyst in the reactor, a heater heating the metal substrate, a pyrolysis gas source supplying pyrolysis gas obtained by thermally decomposing a wood material in a reducing atmosphere to the reactor, a scraper scraping carbon fibers produced on the metal substrate, a recovery container recovering the scraped carbon fibers, and an exhaust pump discharging exhaust gas from the reactor. The carbon fibers are linear carbon fibers with a diameter of 25 to 250 nm formed with layers of graphenes stacked in a longitudinal direction.

    摘要翻译: 根据一个实施方案,提供一种石墨纳米碳纤维,其通过使用具有能够保持其内部还原气氛的反应器的装置,在反应器中作为催化剂排列的金属基材,加热金属基材的加热器, 通过将还原性气氛中的木质材料热分解成反应器得到的裂解气体的热解气体源,在该金属基材上产生的刮刀刮除碳纤维,回收上述刮削碳纤维的回收容器以及从上述排出废气排出废气的排气泵 反应堆。 碳纤维是直径为25至250nm的线性碳纤维,其沿长度方向堆叠形成有层叠的石墨烯。

    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device
    23.
    发明授权
    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device 有权
    氮化铝系陶瓷烧结体及半导体制造装置用部件

    公开(公告)号:US07553787B2

    公开(公告)日:2009-06-30

    申请号:US11612016

    申请日:2006-12-18

    IPC分类号: C04B35/581

    摘要: An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.

    摘要翻译: 提供了一种氮化铝系陶瓷烧结体,其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量%以上至1.0重量%以下的量烧结而形成, 量不大于0.7重量%,其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内,晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。

    Dust indication system for vacuum cleaner
    27.
    发明授权
    Dust indication system for vacuum cleaner 失效
    吸尘器除尘指示系统

    公开(公告)号:US5815884A

    公开(公告)日:1998-10-06

    申请号:US757164

    申请日:1996-11-27

    IPC分类号: A47L9/19 A47L9/28 A47L5/00

    摘要: A vacuum cleaner includes an optical dust sensor for detecting a quantity of dust which sensor is provided at a predetermined position of a suction path for sucking air by a suction force of the vacuum cleaner, whereby an output signal is supplied to a display device so that a display corresponding to the quantity of the sucked dust, which signal is output from the optical dust sensor and is varied in a stageless manner corresponding to the quantity of the dust.

    摘要翻译: 真空吸尘器包括一个光学尘埃传感器,用于检测传感器被设置在吸入通道的预定位置处,用于通过吸尘器的吸力吸入空气,由此输出信号被提供给显示装置,使得 显示与从尘埃传感器输出的信号相对应的吸尘量对应于与灰尘量对应的无级方式变化的显示。

    Antenna, dielectric window, plasma processing apparatus and plasma processing method
    28.
    发明授权
    Antenna, dielectric window, plasma processing apparatus and plasma processing method 有权
    天线,电介质窗,等离子体处理装置和等离子体处理方法

    公开(公告)号:US09595425B2

    公开(公告)日:2017-03-14

    申请号:US13541940

    申请日:2012-07-05

    CPC分类号: H01J37/32238

    摘要: An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.

    摘要翻译: 天线,电介质窗,等离子体处理装置和等离子体处理方法能够提高基板表面的基板表面处理量的均匀性。 天线包括电介质窗16; 以及设置在电介质窗口16的一侧上的槽板20,具有多个狭槽133.介电窗口16具有由环形的第一凹部包围的平坦表面146; 以及形成在平坦表面146上以围绕平坦表面146的中心的多个第二凹部153.这里,平坦表面146形成在电介质窗口16的另一侧。当从厚度方向 槽板,每个第二凹槽153的中心位于槽板的每个槽133内。

    Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus
    29.
    发明授权
    Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus 有权
    用于等离子体处理装置的电介质窗,等离子体处理装置和用于等离子体处理装置的电介质窗安装方法

    公开(公告)号:US08988012B2

    公开(公告)日:2015-03-24

    申请号:US13638345

    申请日:2011-03-24

    摘要: In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

    摘要翻译: 在用于等离子体处理装置的电介质窗41中,在电介质窗41的表面的外部区域,在电介质窗口41的产生等离子体的一侧的直径方向形成有第一电介质窗凹部47, 第一电介质窗凹部47以环状延伸,并且在电介质窗口41的厚度方向上向内具有锥形。多个第二电介质窗凹部53a至53g形成在电介质窗41的中心和 第一电介质窗凹部47,并且第二电介质窗凹部53a至53g中的每一个从电介质窗41的表面沿介质窗41的厚度方向向内凹陷。