公开(公告)号：US20120322186A1

公开(公告)日：2012-12-20

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L33/12

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20110272728A1

公开(公告)日：2011-11-10

申请号：US12991864

申请日：2009-04-17

申请人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

发明人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

IPC分类号： H01L33/36

CPC分类号： H01L25/167 ,  H01L33/0079 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

摘要翻译： 提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。 半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。 载体（5）包括面向半导体本体（2）的主表面（51）。 第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。 第二半导体层（22）可通过第二接触件（36）电接触。 保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

公开(公告)号：US08450751B2

公开(公告)日：2013-05-28

申请号：US12596170

申请日：2008-04-24

申请人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sabathil

发明人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sabathil

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.

摘要翻译： 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。

公开(公告)号：US08319250B2

公开(公告)日：2012-11-27

申请号：US12991864

申请日：2009-04-17

申请人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

发明人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

IPC分类号： H01L33/38

CPC分类号： H01L25/167 ,  H01L33/0079 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

摘要翻译： 提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。 半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。 载体（5）包括面向半导体本体（2）的主表面（51）。 第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。 第二半导体层（22）可通过第二接触件（36）电接触。 保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

公开(公告)号：US08283191B2

公开(公告)日：2012-10-09

申请号：US12990243

申请日：2009-06-09

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L33/22 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20110049555A1

公开(公告)日：2011-03-03

申请号：US12921379

申请日：2009-03-13

申请人： Karl Engl ,  Lutz Hoeppel ,  Patrick Rode ,  Matthias Sabathil

发明人： Karl Engl ,  Lutz Hoeppel ,  Patrick Rode ,  Matthias Sabathil

IPC分类号： H01L33/58 ,  H01L31/00

CPC分类号： H01L33/382 ,  H01L33/10 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.

摘要翻译： 光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。 第一导电类型的层与半导体层序列的正面相邻。 半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。 第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。

公开(公告)号：US20100230698A1

公开(公告)日：2010-09-16

申请号：US12678259

申请日：2008-08-27

申请人： Patrick Rode ,  Karl Engl ,  Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil

发明人： Patrick Rode ,  Karl Engl ,  Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil

IPC分类号： H01L33/12 ,  H01L33/30

CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/40 ,  H01L33/58 ,  H01L2933/0091

摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.

摘要翻译： 光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。 光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。 光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

公开(公告)号：US08928052B2

公开(公告)日：2015-01-06

申请号：US12921379

申请日：2009-03-13

申请人： Karl Engl ,  Lutz Hoeppel ,  Patrick Rode ,  Matthias Sabathil

发明人： Karl Engl ,  Lutz Hoeppel ,  Patrick Rode ,  Matthias Sabathil

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/10 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.

摘要翻译： 光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。 第一导电类型的层与半导体层序列的正面相邻。 半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。 第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。

公开(公告)号：US08362506B2

公开(公告)日：2013-01-29

申请号：US12678259

申请日：2008-08-27

申请人： Patrick Rode ,  Karl Engl ,  Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil

发明人： Patrick Rode ,  Karl Engl ,  Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil

IPC分类号： H01L33/12 ,  H01L33/30

CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/40 ,  H01L33/58 ,  H01L2933/0091

摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.

摘要翻译： 光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。 光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。 光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

公开(公告)号：US20130200432A1

公开(公告)日：2013-08-08

申请号：US13809642

申请日：2011-07-07

申请人： Peter Stauß ,  Patrick Rode ,  Philipp Drechsel

发明人： Peter Stauß ,  Patrick Rode ,  Philipp Drechsel

IPC分类号： H01L21/36 ,  H01L29/267

CPC分类号： H01L29/267 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/382

摘要： A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.

摘要翻译： 半导体部件包括基于氮化物化合物半导体材料的半导体本体，以及配置有半导体主体的基板，以目标方式在基板上形成杂质。