公开(公告)号：US20170271384A1

公开(公告)日：2017-09-21

申请号：US15071035

申请日：2016-03-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US20170110608A1

公开(公告)日：2017-04-20

申请号：US14882832

申请日：2015-10-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L31/0352 ,  H04N5/369 ,  H04N9/04 ,  H04N9/73 ,  H01L31/032 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/1463

Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.

公开(公告)号：US09484373B1

公开(公告)日：2016-11-01

申请号：US14944772

申请日：2015-11-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material, and a transfer gate disposed adjacent to an edge of the photodiode. A dielectric layer is also disposed between the semiconductor material and the transfer gate. A hard mask is disposed in an encapsulation layer and lateral bounds of the hard mask are coextensive with lateral bounds of the transfer gate. A first contact trench extends through the encapsulation layer and through the dielectric layer and contacts the semiconductor material. A second contact trench extends through the encapsulation layer and through the hard mask and contacts the transfer gate.

Abstract translation: 图像传感器包括具有设置在半导体材料中的光电二极管的半导体材料和邻近光电二极管的边缘设置的传输门。 电介质层也设置在半导体材料和传输门之间。 硬掩模设置在封装层中，硬掩模的横向边界与传输门的横向边界共同延伸。 第一接触沟槽延伸穿过封装层并穿过电介质层并接触半导体材料。 第二接触沟槽延伸穿过封装层并穿过硬掩模并接触传输门。

公开(公告)号：US09472587B2

公开(公告)日：2016-10-18

申请号：US14606416

申请日：2015-01-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

公开(公告)号：US09455291B2

公开(公告)日：2016-09-27

申请号：US14601010

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

公开(公告)号：US09419044B2

公开(公告)日：2016-08-16

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20160218132A1

公开(公告)日：2016-07-28

申请号：US14606416

申请日：2015-01-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

公开(公告)号：US09304741B2

公开(公告)日：2016-04-05

申请号：US13867979

申请日：2013-04-22

Applicant: OmniVision Technologies, Inc.

Inventor： Dominic Massetti ,  Gang Chen

IPC: G01R29/26 ,  G06F7/58

CPC classification number: G06F7/582 ,  G01R29/26 ,  G06F7/588

Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.

Abstract translation: 用于生成随机数的技术和机制。 在一个实施例中，从包括第一源极跟随器晶体管的第一单元接收第一信号。 电路逻辑检测第一信号的脉冲，并且响应于脉冲，产生指示检测第一源极跟随器晶体管中的第一随机电报噪声事件的信号。 在另一实施例中，响应于所指示的第一随机电报噪声事件的检测，执行第一计数更新。 第一计数更新是用于生成与多个随机电报噪声事件相对应的数字的一个基础。

公开(公告)号：US20160086999A1

公开(公告)日：2016-03-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

Abstract translation: 图像传感器包括靠近第一半导体层的前侧设置的多个光电二极管，以响应于被引导到第一半导体层的前侧的光积累图像电荷。 多个钉扎孔设置在第一半导体层中。 钉扎井分离包括在多个光电二极管中的各个光电二极管。 多个介电层设置在第一半导体层的背面附近。 电介质层被调谐，使得具有基本上等于包含在第一半导体层的前端的光的第一波长的波长的光从电介质层反射回多个光电二极管中相应的一个设置在接近 第一半导体层的前方。

公开(公告)号：US20150303235A1

公开(公告)日：2015-10-22

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。