公开(公告)号：US20240244344A1

公开(公告)日：2024-07-18

申请号：US18154715

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yifei Du ,  Zhiqiang Lin ,  Bill Phan ,  Woon Il Choi

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/771

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/771

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

公开(公告)号：US20240073559A1

公开(公告)日：2024-02-29

申请号：US17893689

申请日：2022-08-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Young Woo Jung ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Zhiqiang Lin ,  Sang Joo Lee

IPC: H04N5/369 ,  H01L27/146

CPC classification number: H04N5/36961 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3698

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

公开(公告)号：US20230395628A1

公开(公告)日：2023-12-07

申请号：US17832399

申请日：2022-06-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chin Poh Pang ,  Wei Deng ,  Chen-Wei Lu ,  Da Meng ,  Guansong Liu ,  Yin Qian ,  Xiaodong Yang ,  Hongjun Li ,  Zhiqiang Lin ,  Chao Niu

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14645

Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.

公开(公告)号：US11538836B2

公开(公告)日：2022-12-27

申请号：US16993018

申请日：2020-08-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen ,  Chao Niu ,  Zhiqiang Lin

IPC: H01L27/146

Abstract: A pixel cell includes a photodiode disposed proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside of the semiconductor layer. A cell deep trench isolation (CDTI) structure is disposed along an optical path of the incident light to the photodiode and proximate to the backside of the semiconductor layer. The CDTI structure includes a plurality of portions arranged in the semiconductor layer. Each of the plurality of portions extends a respective depth from the backside towards the front side of the semiconductor layer. The respective depth of each of the plurality of portions is different than a respective depth of a neighboring one of the plurality of portions. Each of the plurality of portions is laterally separated and spaced apart from said neighboring one of the plurality of portions in the semiconductor layer.

公开(公告)号：US11211421B2

公开(公告)日：2021-12-28

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: G01S17/89 ,  H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US10964744B1

公开(公告)日：2021-03-30

申请号：US16570920

申请日：2019-09-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Cunyu Yang ,  Ping-Hsu Chen ,  Zhiqiang Lin ,  Chengming Liu

IPC: G01J5/20 ,  H01L27/14 ,  H01L27/146

Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.

公开(公告)号：US20200235158A1

公开(公告)日：2020-07-23

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US09818791B1

公开(公告)日：2017-11-14

申请号：US15285408

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Zhiqiang Lin ,  Keiji Mabuchi ,  Gang Chen ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Dajiang Yang

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/235

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H04N5/2355 ,  H04N5/35563 ,  H04N5/37457 ,  H04N5/378

Abstract: A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor material and the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes. The optical shield prevents a first portion of image light from reaching the third photodiode.

公开(公告)号：US12107107B2

公开(公告)日：2024-10-01

申请号：US17530296

申请日：2021-11-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yifei Du ,  Zhiqiang Lin ,  Hui Zang ,  Seong Yeol Mun

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: A dark-current-inhibiting image sensor includes a semiconductor substrate, a thin and a thin junction. The semiconductor substrate includes a front surface, a back surface opposite the front surface, a photodiode, and a concave surface between the front surface and the back surface. The concave surface extends from the back surface toward the front surface, and defines a trench that surrounds the photodiode in a cross-sectional plane parallel to the back surface. The thin junction extends from the concave surface into the semiconductor substrate, and is a region of the semiconductor substrate. The semiconductor substrate includes a first substrate region, located between the thin junction and the photodiode, that has a first conductive type. The photodiode and the thin junction have a second conductive type opposite the first conductive type.

公开(公告)号：US20210082990A1

公开(公告)日：2021-03-18

申请号：US16570920

申请日：2019-09-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Cunyu Yang ,  Ping-Hsu Chen ,  Zhiqiang Lin ,  Chengming Liu

IPC: H01L27/146

Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.