Polarization controlled transistor
    23.
    发明授权

    公开(公告)号:US11848371B2

    公开(公告)日:2023-12-19

    申请号:US16920249

    申请日:2020-07-02

    Abstract: A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.

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