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公开(公告)号：US06289732B1
公开(公告)日：2001-09-18
申请号：US08987255
申请日：1997-12-09
申请人： Bruno Murari , Paolo Ferrari , Benedetto Vigna
发明人： Bruno Murari , Paolo Ferrari , Benedetto Vigna
IPC分类号： G01P102
CPC分类号： G01P15/0802 , G01P1/023
摘要： An inertial sensor has a sensing element formed on one surface of a chip of semiconductor material and which is movable with respect to the chip. The sensing element is enclosed in a sealed hollow structure, in which the hollow structure includes a metal wall disposed on the surface around the sensing element, and a closure plate fixed to the wall.
摘要翻译： 惯性传感器具有形成在半导体材料芯片的一个表面上并且可相对于芯片移动的感测元件。 感测元件封闭在密封的中空结构中，其中中空结构包括设置在感测元件周围的表面上的金属壁和固定到壁上的封闭板。
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22.发明授权Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 有权用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器公开(公告)号：US06184051B2
公开(公告)日：2001-02-06
申请号：US09479189
申请日：2000-01-07
申请人： Paolo Ferrari , Benedetto Vigna
发明人： Paolo Ferrari , Benedetto Vigna
IPC分类号： H01L2100
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81C1/00246 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译： 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。
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23.发明授权Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom 失效用于制造高灵敏度电容和谐振集成传感器，特别是加速度计和陀螺仪以及由其制造的传感器的方法
公开(公告)号：US6090638A
公开(公告)日：2000-07-18
申请号：US113979
申请日：1998-07-10
IPC分类号： B81B3/00 , G01C19/56 , G01P15/00 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L29/84 , H02L23/48
CPC分类号： H01L21/764 , B81C1/00246 , G01C19/56 , G01P15/0802 , G01P15/125 , H01L21/76202 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2203/0307 , B81C2201/0109 , B81C2201/014 , B81C2203/0735 , G01P2015/0814
摘要： A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
摘要翻译： 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。
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公开(公告)号：US6072665A
公开(公告)日：2000-06-06
申请号：US104744
申请日：1998-06-25
申请人： Paolo Ferrari , Bruno Murari , Benedetto Vigna
发明人： Paolo Ferrari , Bruno Murari , Benedetto Vigna
CPC分类号： G11B21/12 , G11B21/24 , G11B5/5552 , G11B5/5582
摘要： A suspension arm (125) for a head (120) of a disk storage device comprises at least one wall (225, 230) substantially perpendicular to the disk (105) and having a portion (238, 239) which is deformable parallel to a plane extending through a longitudinal axis (235) of the suspension arm (125) and perpendicular to the at least one wall (225, 230), and piezoelectric member (240, 255) which can deform the portion (238, 239) in order correspondingly to move the head (120), the piezoelectric member (240-255) being fixed to the portion (238, 239) of the at least one wall (225, 230).
摘要翻译： 用于磁盘存储装置的磁头（120）的悬架臂（125）包括至少一个基本上垂直于磁盘（105）的壁（225,230），并且具有可平行于磁盘的可变形的部分（238,239） 延伸穿过悬挂臂（125）的纵向轴线（235）并且垂直于至少一个壁（225,230）的平面以及可以按顺序使部分（238,239）变形的压电构件（240,255） 相应地移动头部（120），压电元件（240-255）固定在至少一个壁（225,230）的部分（238,239）上。
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25.发明授权Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效一种集成半导体器件，包括化学耐化学气体微传感器及其制造方法
公开(公告)号：US6051854A
公开(公告)日：2000-04-18
申请号：US89816
申请日：1998-06-03
CPC分类号： G01N27/12
摘要： An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.
摘要翻译： 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径，用于由加热器元件产生的热量，从而在器件的操作期间向基板分散的热量可忽略。
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公开(公告)号：US06405592B1
公开(公告)日：2002-06-18
申请号：US09100838
申请日：1998-06-19
申请人： Bruno Murari , Benedetto Vigna , Paolo Ferrari
发明人： Bruno Murari , Benedetto Vigna , Paolo Ferrari
IPC分类号： G01P102
CPC分类号： B81C1/0023 , G01P1/02 , G01P15/0802
摘要： A sensor with a movable microstructure including a sensitive element, formed in a first chip of semiconductor material for producing an electrical signal dependent on a movement of at least one movable microstructure relative to a surface of the first chip. The sensitive element is enclosed in a hollow hermetic structure, and circuitry for processing the electrical signal is formed in a second chip of semiconductor material. The hollow hermetic structure includes a metal wall disposed on the surface of the first chip around the sensitive element, and the second chip is fixed to the metal wall.
摘要翻译： 一种具有可移动微结构的传感器，包括敏感元件，其形成在半导体材料的第一芯片中，用于根据至少一个可移动微结构相对于第一芯片的表面的运动产生电信号。 敏感元件封闭在中空密封结构中，并且用于处理电信号的电路形成在半导体材料的第二芯片中。 中空密封结构包括设置在敏感元件周围的第一芯片的表面上的金属壁，第二芯片固定在金属壁上。
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27.发明授权Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 有权一种集成半导体器件，包括化学耐化学气体微传感器及其制造方法公开(公告)号：US06248609B1
公开(公告)日：2001-06-19
申请号：US09506414
申请日：2000-02-17
IPC分类号： H01L2100
CPC分类号： G01N27/12
摘要： An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.
摘要翻译： 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径，用于由加热器元件产生的热量，从而在器件的操作期间向基板分散的热量可忽略。
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公开(公告)号：US06198145B1
公开(公告)日：2001-03-06
申请号：US09181717
申请日：1998-10-28
申请人： Paolo Ferrari , Benedetto Vigna
发明人： Paolo Ferrari , Benedetto Vigna
IPC分类号： H01L2982
CPC分类号： H02N1/006
摘要： The integrated microactuator has a stator and a rotor having a circular extension with radial arms which support electrodes extending in a substantially circumferential direction and interleaved with one another. For the manufacture, first a sacrificial region is formed on a silicon substrate; an epitaxial layer is then grown; the circuitry electronic components and the biasing conductive regions are formed; subsequently a portion of substrate beneath the sacrificial region is removed, forming an aperture extending through the entire substrate; the epitaxial layer is excavated to define and separate from one another the rotor and the stator, and finally the sacrificial region is removed to release the mobile structures from the remainder of the chip.
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29.发明授权Optical two-dimensional position sensor in a control device for automotive applications 失效用于汽车应用的控制装置中的光学二维位置传感器
公开(公告)号：US6153875A
公开(公告)日：2000-11-28
申请号：US85534
申请日：1998-05-27
IPC分类号： G01D5/34
CPC分类号： G01D5/34
摘要： An optical two-dimensional position sensor including a selective optical unit which faces, and is displaceable relative to, an integrated device. The selective optical unit is formed by a polarized light source and a filter with four quadrants which permits passage of light through two quadrants only. The selective optical unit is attached to a control lever such as to translate in a plane along a first direction and a second direction, and to pivot around an axis which is orthogonal to the preceding directions. In a transparent package, the integrated device comprises a first group of sensor elements which are spaced along the first direction, a second group of sensor elements which are spaced along the second direction and a third group of sensor elements which detect an angular position of the selective optical unit. Electronics which are integrated with the sensor elements generates a code which is associated with each position which is assumed by the selective optical unit and a control signal which corresponds to a function to be performed.
摘要翻译： 一种光学二维位置传感器，包括面向并可相对于集成装置移位的选择性光学单元。 选择性光学单元由偏振光源和具有四个象限的滤光片形成，其允许光仅通过两个象限。 选择性光学单元附接到控制杆，例如沿着第一方向和第二方向在平面中平移，并且围绕与前述方向正交的轴线枢转。 在透明封装中，集成器件包括沿着第一方向间隔开的第一组传感器元件，沿着第二方向间隔开的第二组传感器元件，以及第三组传感器元件，其检测 选择光学单元。 与传感器元件集成的电子产生与由选择性光学单元所假设的每个位置相关联的代码和对应于要执行的功能的控制信号。
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30.发明授权Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 失效用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器
公开(公告)号：US6109106A
公开(公告)日：2000-08-29
申请号：US126625
申请日：1998-07-30
IPC分类号： G01P9/04 , B81B3/00 , G01C19/56 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L41/08
CPC分类号： H01L21/764 , B81C1/00246 , G01P15/0802 , G01P15/125 , H01L21/76202 , B81B2201/0235 , B81B2201/0242 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P2015/0814
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译： 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。
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