Method and apparatus for providing a three-dimensional data navigation and manipulation interface

    公开(公告)号:US10969833B2

    公开(公告)日:2021-04-06

    申请号:US13089870

    申请日:2011-04-19

    Applicant: Peng Cheng

    Inventor: Peng Cheng

    Abstract: Various methods for providing a multi-dimensional data interface are provided. One example method may include receiving first data navigation instructions for navigating data in a first dimension or a second dimension via a first user interface device, causing a presentation of the data to be modified within the first dimension or the second dimension in response to at least receiving the first data navigation instructions, receiving second data navigation instructions for navigating the data in a third dimension via a second user interface device, and causing the presentation of the data to be modified within a third dimension in response to at least receiving the second data navigation instructions. Similar and related example methods, example apparatuses, and example computer program products are also provided.

    UPLINK NOISE ESTIMATION FOR VIRTUAL MIMO
    22.
    发明申请
    UPLINK NOISE ESTIMATION FOR VIRTUAL MIMO 有权
    虚拟MIMO的上行噪声估计

    公开(公告)号:US20140064391A1

    公开(公告)日:2014-03-06

    申请号:US13878708

    申请日:2010-10-11

    Abstract: A system and methods for estimating a noise power level in an uplink signal for a virtual MIMO system is disclosed. The system comprises a demodulation reference signal (DMRS) module configured to obtain a DMRS receive symbol from the uplink signal and determine a DMRS sequence for a first UE in the virtual MIMO system. An autocorrelation module is configured to calculate an average autocorrelation value for the subcarriers in the uplink signal. A cross-correlation module is configured to calculate first and second cross-correlation values of the uplink signal Rz (l) for values of l selected such that the sum of the received power from the first UE and the second UE can be accurately estimated. A noise power level module is configured to determine the noise power level for the uplink signal using the average autocorrelation value and the first and second cross correlation values.

    Abstract translation: 公开了一种用于估计虚拟MIMO系统的上行链路信号中的噪声功率电平的系统和方法。 该系统包括解调参考信号(DMRS)模块,其被配置为从上行链路信号获得DMRS接收符号,并确定虚拟MIMO系统中的第一UE的DMRS序列。 自相关模块被配置为计算上行链路信号中的子载波的平均自相关值。 互相关模块被配置为针对所选择的l的值计算上行链路信号Rz(1)的第一和第二互相关值,使得可以准确地估计来自第一UE和第二UE的接收功率之和。 噪声功率电平模块被配置为使用平均自相关值和第一和第二互相关值来确定上行链路信号的噪声功率电平。

    Modulators of PPAR and methods of their preparation
    23.
    发明授权
    Modulators of PPAR and methods of their preparation 失效
    PPAR的调节剂及其制备方法

    公开(公告)号:US07622491B2

    公开(公告)日:2009-11-24

    申请号:US11202963

    申请日:2005-08-11

    Abstract: The present invention is directed to certain novel compounds represented by Formula (I) and pharmaceutically acceptable salts, solvates, hydrates and prodrugs thereof. The present invention is also directed to methods of making and using such compounds and pharmaceutical compositions containing such compounds to treat or control a number of diseases mediated by PPAR such as glucose metabolism, lipid metabolism and insulin secretion, specifically Type 2 diabetes, hyperinsulinemia, hyperlipidemia, hyperuricemia, hypercholesteremia, atherosclerosis, one or more risk factors for cardiovascular disease, Syndrome X, hypertriglyceridemia, hyperglycemia, obesity and eating disorders.

    Abstract translation: 本发明涉及由式(I)表示的某些新型化合物及其药学上可接受的盐,溶剂合物,水合物和前药。 本发明还涉及制备和使用这些化合物和含有这些化合物的药物组合物的方法,以治疗或控制由PPAR介导的许多疾病,例如葡萄糖代谢,脂质代谢和胰岛素分泌,特别是2型糖尿病,高胰岛素血症,高脂血症 高尿酸血症,高胆固醇血症,动脉粥样硬化,心血管疾病的一个或多个危险因素,X综合征,高甘油三酯血症,高血糖症,肥胖症和进食障碍。

    Process for the stereoselective preparation of (-)-halofenate and derivatives thereof
    24.
    发明申请
    Process for the stereoselective preparation of (-)-halofenate and derivatives thereof 失效
    ( - ) - 卤代苯甲酸酯及其衍生物的立体选择性制备方法

    公开(公告)号:US20070072858A1

    公开(公告)日:2007-03-29

    申请号:US11525200

    申请日:2006-09-20

    CPC classification number: C07D295/185

    Abstract: The present invention provides a compounds the formula (IV): and methods for producing an α-(phenoxy)phenylacetic acid compound of the formula: wherein R1 is a member selected from the group consisting of: each R2 is a member independently selected from the group consisting of (C1-C4)alkyl, halo, (C1-C4)haloalkyl, amino, (C1-C4)aminoalkyl, amido, (C1-C4)amidoalkyl, (C1-C4)sulfonylalkyl, (C1-C4)sulfamylalkyl, (C1-C4)alkoxy, (C1-C4)heteroalkyl, carboxy and nitro; the subscript n is 1 when R1 has the formula (a) or (b) and 2 when R1 has the formula (c) or (d); the subscript m is an integer of from 0 to 3; * indicates a carbon which is enriched in one stereoisomeric configuration; and the wavy line indicates the point of attachment of R1; and compounds

    Abstract translation: 本发明提供式(IV)化合物及其制备下式的α-(苯氧基)苯乙酸化合物的方法:其中R 1是选自以下的成员:各 R 2是独立地选自(C 1 -C 4 -C 4)烷基,卤素,(C 1 -C 4)烷基的成员, C 1 -C 4卤代烷基,氨基,(C 1 -C 4)氨基烷基,酰氨基,(C 1 H 4) (C 1 -C 4)磺酰基烷基,(C 1 -C 4)磺酰基烷基,(C 1 -C 4 - C 1 -C 4亚磺酰基烷基,(C 1 -C 4 -C 4)烷氧基,(C 1 -C 3 - 亚磺酰基烷基) > 4个)杂烷基,羧基和硝基; 当R 1具有式(a)或(b)时,下标n为1,当R 1具有式(c)或(d))时,下标n为1。 下标m为0〜3的整数; *表示富含一种立体异构构型的碳; 波浪线表示R 1的连接点; 和化合物

    Substituted triazoles as modulators of PPAR and methods of their preparation
    25.
    发明申请
    Substituted triazoles as modulators of PPAR and methods of their preparation 有权
    取代三唑作为PPAR的调节剂及其制备方法

    公开(公告)号:US20060014809A1

    公开(公告)日:2006-01-19

    申请号:US11137678

    申请日:2005-05-24

    CPC classification number: C07D249/06 C07D409/10

    Abstract: The present invention is directed to certain novel triazole compounds represented by Formula I and pharmaceutically acceptable salts, solvates, hydrates, and prodrugs thereof. The present invention is also directed to methods of making and using such compounds and pharmaceutical compositions containing such compounds to treat or control a number of diseases mediated by PPAR such as glucose metabolism, lipid metabolism and insulin secretion, specifically Type 2 diabetes, hyperinsulemia, hyperlipidemia, hyperuricemia, hypercholesteremia, atherosclerosis, one or more risk factors for cardiovascular disease, Syndrome X, hypertriglyceridemia, hyperglycemia, obesity, and eating disorders.

    Abstract translation: 本发明涉及由式I表示的某些新颖的三唑化合物及其药学上可接受的盐,溶剂合物,水合物和前药。 本发明还涉及制备和使用这些化合物和含有这些化合物的药物组合物的方法,以治疗或控制PPAR介导的许多疾病,例如葡萄糖代谢,脂质代谢和胰岛素分泌,特别是2型糖尿病,高胰岛素血症,高脂血症 高尿酸血症,高胆固醇血症,动脉粥样硬化,心血管疾病的一个或多个危险因素,X综合征,高甘油三酯血症,高血糖症,肥胖症和进食障碍。

    Variable tunable range MEMS capacitor
    26.
    发明授权
    Variable tunable range MEMS capacitor 失效
    可变可调范围的MEMS电容器

    公开(公告)号:US06980412B2

    公开(公告)日:2005-12-27

    申请号:US09992796

    申请日:2001-11-05

    Applicant: Peng Cheng Qing Ma

    Inventor: Peng Cheng Qing Ma

    CPC classification number: H01G5/16 Y10T29/435

    Abstract: The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.

    Abstract translation: 本发明涉及一种可变电容器及其制造方法。 可变电容器包括设置在基板中的固定充电板,设置在固定充电板上方的可移动充电板和固定到可移动充电板的加强件。 可移动充电板可以被图案化以形成可动致动器板,其中固定的充电板在固定的致动器板上方升高。

    High dielectric constant metal oxide gate dielectrics
    27.
    发明授权
    High dielectric constant metal oxide gate dielectrics 有权
    高介电常数金属氧化物栅极电介质

    公开(公告)号:US06689702B2

    公开(公告)日:2004-02-10

    申请号:US10304434

    申请日:2002-11-25

    Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

    Abstract translation: 形成适合用作金属氧化物半导体场效应晶体管(MOSFET)的栅极电介质层的电介质层的方法包括氧化硅衬底的表面,在氧化表面上形成金属层,并使金属 与氧化表面形成超过衬底的基本上本征的硅层,其中硅层的至少一部分可以是外延硅层,以及位于硅层之上的金属氧化物层。 在本发明的另一方面,集成电路包括多个MOSFET,其中多个晶体管中的各个晶体管具有金属氧化物栅极电介质层和位于金属氧化物电介质层之下的基本上本征的硅层。

    Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator
    28.
    发明授权
    Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator 失效
    用于超高频MEM谐振器的中心质量减小的微桥结构

    公开(公告)号:US06630871B2

    公开(公告)日:2003-10-07

    申请号:US09967732

    申请日:2001-09-28

    Applicant: Qing Ma Peng Cheng

    Inventor: Qing Ma Peng Cheng

    Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

    Abstract translation: 描述了一种微机电(MEM)谐振器,其包括衬底,耦合到衬底的微桥梁结构和邻近微桥梁结构设置的至少一个电极以引起梁的振动。 微桥梁结构包括支撑部分和形成在支撑部分之间的梁。 梁的中心区域的质量小于与支撑部分相邻的梁的区域的质量。

    Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition

    公开(公告)号:US06570220B2

    公开(公告)日:2003-05-27

    申请号:US09524986

    申请日:2000-03-14

    Abstract: The invention relates to a method of forming reduced feature size spacers. The method includes providing a semiconductor substrate having an area region; patterning a first spacer over a portion of the area region of the substrate, the first spacer having a first thickness and opposing side portions; patterning a pair of second spacers, each second spacer adjacent to a side portion of the first spacer, each second spacer having a second thickness in opposing side portions, wherein the second thickness is less than the first thickness; removing the first spacer; patterning a plurality of third spacers, each third spacer adjacent to one of the side portions of one of the second spacers, each one of the third spacers having a third thickness, wherein the third thickness is less than the second thickness; and removing the second spacers. The invention also relates to a field of effect transistor. The transistor includes a semiconductor substrate having a source region and a drain region; a gate area of the substrate surface; a channel region in the substrate having a cross-sectional area defined by a portion of the gate area, a channel length measured accross a portion of the channel region between the source region and the drain region; and a trench formed in a portion of the channel region, the trench having a trench length substantially equivalent to the channel length.

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