公开(公告)号：US20130140944A1

公开(公告)日：2013-06-06

申请号：US13681904

申请日：2012-11-20

申请人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

发明人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

IPC分类号： H02N1/00

CPC分类号： H01L41/053 ,  B81B3/0018 ,  H01L2224/11 ,  H01L2224/48091 ,  H02N1/006 ,  H03H3/007 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02535 ,  H03H2009/241

摘要： Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

公开(公告)号：US09030080B2

公开(公告)日：2015-05-12

申请号：US13681893

申请日：2012-11-20

申请人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

发明人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

IPC分类号： H01L41/053 ,  H03H3/007 ,  H03H9/02 ,  B81B3/00 ,  H02N1/00 ,  H03H9/24

CPC分类号： H01L41/053 ,  B81B3/0018 ,  H01L2224/11 ,  H01L2224/48091 ,  H02N1/006 ,  H03H3/007 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02535 ,  H03H2009/241

摘要： Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

摘要翻译： 描述了具有与基板一体化的压电材料结构的装置。 还描述了用于形成这种装置的制造技术。 该制造可以包括将压电材料晶片结合到不同材料的衬底。 然后可以由压电材料晶片形成诸如谐振器的结构。

公开(公告)号：US08476809B2

公开(公告)日：2013-07-02

申请号：US13466767

申请日：2012-05-08

申请人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

发明人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

IPC分类号： H01L41/053 ,  H03B1/00 ,  H03B5/32

CPC分类号： H01L41/053 ,  B81B3/0018 ,  H01L2224/11 ,  H01L2224/48091 ,  H02N1/006 ,  H03H3/007 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02535 ,  H03H2009/241

摘要： Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

公开(公告)号：US20120280594A1

公开(公告)日：2012-11-08

申请号：US13466767

申请日：2012-05-08

申请人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

发明人： David M. Chen ,  Jan H. Kuypers ,  Pritiraj Mohanty ,  Klaus Juergen Schoepf ,  Guiti Zolfagharkhani ,  Jason Goodelle ,  Reimund Rebel

IPC分类号： H01L41/053

CPC分类号： H01L41/053 ,  B81B3/0018 ,  H01L2224/11 ,  H01L2224/48091 ,  H02N1/006 ,  H03H3/007 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02535 ,  H03H2009/241

摘要： Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

摘要翻译： 描述了具有与基板一体化的压电材料结构的装置。 还描述了用于形成这种装置的制造技术。 该制造可以包括将压电材料晶片结合到不同材料的衬底。 然后可以由压电材料晶片形成诸如谐振器的结构。

公开(公告)号：US20100134207A1

公开(公告)日：2010-06-03

申请号：US12311143

申请日：2007-09-20

申请人： Pritiraj Mohanty ,  Robert L. Badzey

发明人： Pritiraj Mohanty ,  Robert L. Badzey

IPC分类号： H03H9/00

CPC分类号： H03H3/0072 ,  H03H9/2463 ,  H03H9/2473 ,  H03H9/505

摘要： A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.

摘要翻译： 一组纳米机电集成电路滤波器。 集成电路滤波器组，包括硅衬底; 牺牲层; 包括至少两个谐振器的器件层，其中所述至少两个谐振器包括次微可激励元件，并且其中所述至少两个谐振器具有基本模式频率以及集体模式频率，并且其中所述至少两个谐振器的所述集体模式频率至少 两个谐振器由亚微米元件的基频决定。 至少有一个开关连接到集成电路滤波器组。

公开(公告)号：US08487715B2

公开(公告)日：2013-07-16

申请号：US12311143

申请日：2007-09-20

申请人： Pritiraj Mohanty ,  Robert L. Badzey

发明人： Pritiraj Mohanty ,  Robert L. Badzey

IPC分类号： H03H9/70 ,  H03H9/74 ,  H03H9/46 ,  H03H9/24

CPC分类号： H03H3/0072 ,  H03H9/2463 ,  H03H9/2473 ,  H03H9/505

摘要： A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.

摘要翻译： 一组纳米机电集成电路滤波器。 集成电路滤波器组，包括硅衬底; 牺牲层; 包括至少两个谐振器的器件层，其中所述至少两个谐振器包括次微可激励元件，并且其中所述至少两个谐振器具有基本模式频率以及集体模式频率，并且其中所述至少两个谐振器的所述集体模式频率至少 两个谐振器由亚微米元件的基频决定。 至少有一个开关连接到集成电路滤波器组。

公开(公告)号：US07990229B2

公开(公告)日：2011-08-02

申请号：US12142254

申请日：2008-06-19

申请人： Alexei Gaidarzhy ,  Klaus Juergen Schoepf ,  Pritiraj Mohanty

发明人： Alexei Gaidarzhy ,  Klaus Juergen Schoepf ,  Pritiraj Mohanty

IPC分类号： H04B3/04 ,  H03L1/00 ,  H03H9/02

CPC分类号： H03H9/02409 ,  H03H9/02448 ,  H03H9/2447 ,  H03L1/00 ,  H03L7/00 ,  H03L7/06

摘要： Compensation of a signal using resonators as well as related methods and devices are described. Some embodiments include methods and devices for performing frequency compensation on a signal.

摘要翻译： 描述使用谐振器的信号的补偿以及相关方法和装置。 一些实施例包括用于对信号执行频率补偿的方法和装置。

公开(公告)号：US20100026136A1

公开(公告)日：2010-02-04

申请号：US12181531

申请日：2008-07-29

申请人： Alexei Gaidarzhy ,  Pritiraj Mohanty

发明人： Alexei Gaidarzhy ,  Pritiraj Mohanty

IPC分类号： H02N11/00

CPC分类号： H03H9/02259 ,  B81B3/0086 ,  B81B2201/0271 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2463 ,  H03H2009/02354 ,  H03H2009/02464 ,  H03H2009/02496

摘要： Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure.

摘要翻译： 本文描述了微机械谐振装置以及相关方法。 谐振装置可以包括微机械谐振结构，致动谐振结构的致动结构以及检测谐振结构的运动的检测结构。

公开(公告)号：US20120086306A1

公开(公告)日：2012-04-12

申请号：US13330965

申请日：2011-12-20

申请人： ALEXEI GAIDARZHY ,  Pritiraj Mohanty

发明人： ALEXEI GAIDARZHY ,  Pritiraj Mohanty

IPC分类号： H02N1/00

CPC分类号： H03H9/02259 ,  B81B3/0086 ,  B81B2201/0271 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2463 ,  H03H2009/02354 ,  H03H2009/02464 ,  H03H2009/02496

摘要： Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure.

摘要翻译： 本文描述了微机械谐振装置以及相关方法。 谐振装置可以包括微机械谐振结构，致动谐振结构的致动结构以及检测谐振结构的运动的检测结构。

公开(公告)号：US08638179B2

公开(公告)日：2014-01-28

申请号：US13330965

申请日：2011-12-20

申请人： Alexei Gaidarzhy ,  Pritiraj Mohanty

发明人： Alexei Gaidarzhy ,  Pritiraj Mohanty

IPC分类号： H03B5/30 ,  H03H9/24 ,  B81B5/00

CPC分类号： H03H9/02259 ,  B81B3/0086 ,  B81B2201/0271 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2463 ,  H03H2009/02354 ,  H03H2009/02464 ,  H03H2009/02496

摘要： Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure. A bias structure separated from the mechanical resonating structure is provided to tune a resonance frequency of the mechanical resonating structure.

摘要翻译： 本文描述了微机械谐振装置以及相关方法。 谐振装置可以包括微机械谐振结构，致动谐振结构的致动结构以及检测谐振结构的运动的检测结构。 提供与机械谐振结构分离的偏置结构来调谐机械谐振结构的谐振频率。