公开(公告)号：US09502489B2

公开(公告)日：2016-11-22

申请号：US14594063

申请日：2015-01-09

Applicant: Renesas Electronics Corporation

Inventor： Takuo Funaya ,  Takayuki Igarashi

IPC: H01L21/44 ,  H01L49/02 ,  H01L21/66 ,  H01L21/02 ,  H01L21/311 ,  H01L21/78 ,  H01L23/522 ,  H01L23/00

CPC classification number: H01L28/10 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/78 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/03462 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05155 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil is formed via a first insulating film. A second insulating film is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad is formed. Over the second insulating film, a multi-layer film having an opening exposing a part of the pad is formed. Over the multi-layer insulating film, a second coil is formed. The second coil is placed over the first coil. The second and first coils are magnetically coupled to each other. The multi-layer film includes a silicon dioxide film, a silicon nitride film over the silicon dioxide film, and a resin film over the silicon nitride film.

Abstract translation: 提供了具有提高的可靠性的半导体器件。 在半导体衬底上，通过第一绝缘膜形成第一线圈。 形成第二绝缘膜以覆盖第一绝缘膜和第一线圈。 在第二绝缘膜上形成焊盘。 在第二绝缘膜上形成具有露出焊盘一部分的开口的多层膜。 在多层绝缘膜上形成第二线圈。 第二线圈放置在第一线圈上。 第二和第一线圈彼此磁耦合。 多层膜包括二氧化硅膜，二氧化硅膜上的氮化硅膜和氮化硅膜上的树脂膜。

公开(公告)号：US20150206934A1

公开(公告)日：2015-07-23

申请号：US14594063

申请日：2015-01-09

Applicant: Renesas Electronics Corporation

Inventor： Takuo Funaya ,  Takayuki Igarashi

IPC: H01L49/02 ,  H01L21/78 ,  H01L21/311 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L28/10 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/78 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/03462 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05155 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil is formed via a first insulating film. A second insulating film is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad is formed. Over the second insulating film, a multi-layer film having an opening exposing a part of the pad is formed. Over the multi-layer insulating film, a second coil is formed. The second coil is placed over the first coil. The second and first coils are magnetically coupled to each other. The multi-layer film includes a silicon dioxide film, a silicon nitride film over the silicon dioxide film, and a resin film over the silicon nitride film.

Abstract translation: 提供了具有提高的可靠性的半导体器件。 在半导体衬底上，通过第一绝缘膜形成第一线圈。 形成第二绝缘膜以覆盖第一绝缘膜和第一线圈。 在第二绝缘膜上形成焊盘。 在第二绝缘膜上形成具有露出焊盘一部分的开口的多层膜。 在多层绝缘膜上形成第二线圈。 第二线圈放置在第一线圈上。 第二和第一线圈彼此磁耦合。 多层膜包括二氧化硅膜，二氧化硅膜上的氮化硅膜和氮化硅膜上的树脂膜。

公开(公告)号：US20150162395A1

公开(公告)日：2015-06-11

申请号：US14625390

申请日：2015-02-18

Applicant: Renesas Electronics Corporation

Inventor： Takuo Funaya ,  Hiromi Shigihara ,  Hisao Shigihara

IPC: H01L49/02 ,  H01L27/06 ,  H01L27/12

CPC classification number: H01L28/10 ,  H01L23/49575 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0617 ,  H01L27/1203 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06102 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4945 ,  H01L2924/10161 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device including a semiconductor substrate having a main surface; a first insulating layer formed on the main surface and having a first main surface, the first main surface including a first region and a second region without the first area; a first coil formed on the first region of the first insulating layer; a plurality of first wirings formed on the second region of the first insulating layer; a second insulating layer formed on the first coil and on the first wirings, the second insulating layer having a second main surface; a third insulating layer formed on the second main surface above the first region of the first insulating layer and having a third main surface; and a second coil formed on the third main surface of the third insulating layer.

Abstract translation: 一种半导体器件，包括具有主表面的半导体衬底; 形成在所述主表面上并具有第一主表面的第一绝缘层，所述第一主表面包括第一区域和没有所述第一区域的第二区域; 形成在所述第一绝缘层的所述第一区域上的第一线圈; 形成在所述第一绝缘层的所述第二区域上的多个第一布线; 形成在所述第一线圈和所述第一布线上的第二绝缘层，所述第二绝缘层具有第二主表面; 第三绝缘层，形成在所述第一绝缘层的所述第一区域上方的所述第二主表面上，并具有第三主表面; 以及形成在第三绝缘层的第三主表面上的第二线圈。