公开(公告)号：US20140091431A1

公开(公告)日：2014-04-03

申请号：US14090090

申请日：2013-11-26

Applicant: ROHM CO., LTD.

Inventor： Satoshi KAGEYAMA

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L21/76816 ,  H01L27/0207 ,  H01L28/60

Abstract: A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the intermediate electrode to be interposed between the first capacitance film and the second capacitance film; and forming an upper electrode, wherein at least a portion of the second capacitance film is interposed between the upper electrode and the intermediate electrode; the upper electrode extending to a second region outside the first region, and having at least the first capacitance film interposed between the upper electrode and the lower electrode in the second region.

Abstract translation: 一种半导体器件制造方法，包括形成在下电极上形成的第一电容膜; 在所述第一电容膜上的第一区域中形成中间电极，其中所述第一电容介于所述中间电极和所述下电极之间; 在介于所述第一电容膜和所述第二电容膜之间的所述中间电极上形成第二电容膜; 以及形成上电极，其中所述第二电容膜的至少一部分插入在所述上电极和所述中间电极之间; 所述上电极延伸到所述第一区域外的第二区域，并且在所述第二区域中至少具有插入在所述上电极和所述下电极之间的所述第一电容膜。

公开(公告)号：US20230036070A1

公开(公告)日：2023-02-02

申请号：US17961009

申请日：2022-10-06

Applicant: ROHM CO., LTD.

Inventor： Satoshi KAGEYAMA

IPC: B41J2/335

Abstract: A thermal print head includes a head substrate (11) having a main surface (11a) on which a convex part (12) is formed, a resistor layer (21) that is formed on the main surface (11a) and the convex part (12), a wiring layer (22) that covers the resistor layer (21) such that the resistor layer (21) is exposed at a heat generating part (20) formed at a part of the convex part (12), and a protective layer (25) that is formed on the main surface (11a) of the head substrate (11) and covers the resistor layer (21) and the wiring layer (22). The resistor layer (21) has a main resistor layer that contains tantalum, and at least one of a first sub-resistor layer that contains tantalum nitride and is stacked below the tantalum layer and a second sub-resistor layer that contains tantalum nitride and is stacked on the tantalum layer. The nitrogen content of tantalum nitride contained in the first sub-resistor layer and the second sub-resistor layer exceeds a predetermined value such that the tantalum nitride is deposited in a stable structure.

公开(公告)号：US20210233882A1

公开(公告)日：2021-07-29

申请号：US17230339

申请日：2021-04-14

Applicant: ROHM CO., LTD.

Inventor： Bungo TANAKA ,  Keiji WADA ,  Satoshi KAGEYAMA

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/495 ,  H01L23/528

Abstract: A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

公开(公告)号：US20210233700A1

公开(公告)日：2021-07-29

申请号：US17230356

申请日：2021-04-14

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/64 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20180090461A1

公开(公告)日：2018-03-29

申请号：US15717449

申请日：2017-09-27

Applicant: ROHM CO., LTD.

Inventor： Bungo TANAKA ,  Keiji WADA ,  Satoshi KAGEYAMA

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/13 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49548 ,  H01L23/49582 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05582 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/13018 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13176 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/1357 ,  H01L2224/13647 ,  H01L2224/29101 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

公开(公告)号：US20160336277A1

公开(公告)日：2016-11-17

申请号：US15153727

申请日：2016-05-12

Applicant: ROHM CO., LTD.

Inventor： Satoshi KAGEYAMA ,  Bungo TANAKA

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49586 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53209 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05092 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, a wiring having copper as a main component and formed above the insulating film, and a barrier metal film having a higher modulus of rigidity than copper and interposed between the insulating film and the wiring. The barrier metal film may have a lower thermal expansion coefficient than copper.

Abstract translation: 半导体器件包括半导体衬底，形成在半导体衬底之上的绝缘膜，以铜为主要成分并形成在绝缘膜之上的布线，以及具有比铜更高的刚性模量的阻挡金属膜，并且介于绝缘层之间 电影和布线。 阻挡金属膜的热膨胀系数可以低于铜。