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    Semiconductor device and a method of making a semiconductor device
    23.
    发明授权
    Semiconductor device and a method of making a semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US09219204B1

    公开(公告)日：2015-12-22

    申请号：US14205259

    申请日：2014-03-11

    Applicant: Rayvio Corporation

    Inventor： Douglas A. Collins ,  Faisal Sudradjat ,  Robert C. Walker ,  Yitao Liao

    IPC: H01L33/00 ,  H01L33/58 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/06 ,  H01L33/24

    CPC classification number: H01L31/03044 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/101 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L51/0081 ,  H01L51/0082 ,  H01L2924/10344

    Abstract: The present invention provides an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm and a method. The device has a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others and an active region overlying the substrate region. The active region comprises a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The device has an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

    Abstract translation: 本发明提供能够发射约200nm至365nm的电磁辐射的LED器件及其方法。 该器件具有衬底构件，该衬底构件选自蓝宝石，硅，石英，氮化镓，氮化镓铝等，以及覆盖衬底区域的有源区。 有源区域包括包含p-n结的发光空间区域，其特征在于在有源区域中提供的电流的电流拥挤特征。 该装置具有在空间上分开并分开发光空间区域的光学结构，并被配置为便于从活性区域的光提取。

    Package for ultraviolet emitting devices
    24.
    发明授权
    Package for ultraviolet emitting devices 有权

    公开(公告)号：US10381523B2

    公开(公告)日：2019-08-13

    申请号：US14984862

    申请日：2015-12-30

    Applicant: RayVio Corporation

    Inventor： Saijin Liu ,  Douglas A. Collins

    IPC: H01L33/48 ,  H05K1/11 ,  H05K1/02 ,  H01L33/62 ,  H01L33/60 ,  H01L33/64

    Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

    Ultraviolet disinfection system
    25.
    发明授权
    Ultraviolet disinfection system 有权

    公开(公告)号：US10377643B1

    公开(公告)日：2019-08-13

    申请号：US15485177

    申请日：2017-04-11

    Applicant: RayVio Corporation

    Inventor： Douglas A. Collins ,  Yitao Liao ,  Robert S. West

    IPC: C02F1/32 ,  A61L2/10 ,  C02F1/72 ,  C02F1/00

    Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

    ULTRAVIOLET DISINFECTION SYSTEM
    28.
    发明申请
    ULTRAVIOLET DISINFECTION SYSTEM 有权
    超紫外线消毒系统

    公开(公告)号：US20160355412A1

    公开(公告)日：2016-12-08

    申请号：US15209612

    申请日：2016-07-13

    Applicant: RayVio Corporation

    Inventor： Douglas A. Collins ,  Yitao Liao ,  Robert S. West ,  Li Zhang

    IPC: C02F1/32

    CPC classification number: C02F1/325 ,  C02F1/001 ,  C02F2201/009 ,  C02F2201/3222 ,  C02F2201/3228 ,  C02F2201/326 ,  C02F2303/04 ,  C02F2305/10 ,  Y02A20/212

    Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

    Abstract translation: 本发明的实施例包括细长室。 UV源包括半导体器件，该半导体器件包括设置在n型区域和p型区域之间的有源层。 有源层发射具有UV范围内的峰值波长的辐射。 半导体器件位于细长室的壁上。 细长室的内表面是反射性的。

    Pixel array of ultraviolet light emitting devices
    29.
    发明授权
    Pixel array of ultraviolet light emitting devices 有权
    紫外发光装置的像素阵列

    公开(公告)号：US09455300B1

    公开(公告)日：2016-09-27

    申请号：US14662620

    申请日：2015-03-19

    Applicant: RayVio Corporation

    Inventor： Douglas A. Collins ,  Li Zhang ,  Faisal Sudradjat

    IPC: H01L27/15 ,  H01L33/24 ,  H01L33/62 ,  H01L33/48 ,  H01L33/32

    CPC classification number: H01L27/156 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62

    Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

    Abstract translation: 本发明的实施例包括在生长衬底上生长的第一半导体层和在第一半导体层上生长的多个像素，每个像素包括设置在n型区域和p型区域之间的有源层。 沟渠分离各个像素，并为每个像素形成至少一个侧壁。 与p型区域直接接触的第一金属层设置在每个像素的顶表面上。 与n型区域直接接触的第二金属层设置在与每个像素相邻的沟槽的底表面上。 电隔离第一和第二金属层的绝缘层设置在每个像素的侧壁上并且基本上与侧壁共形。

    Package for ultraviolet emitting devices
    30.
    发明授权
    Package for ultraviolet emitting devices 有权

    公开(公告)号：US10403792B2

    公开(公告)日：2019-09-03

    申请号：US15063260

    申请日：2016-03-07

    Applicant: RayVio Corporation

    Inventor： Saijin Liu ,  Li Zhang ,  Douglas A. Collins

    IPC: H01L33/32 ,  H01L33/06 ,  H01L33/64 ,  H01L33/48 ,  H01L33/58

    Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

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