公开(公告)号：US20050095443A1

公开(公告)日：2005-05-05

申请号：US10699226

申请日：2003-10-31

申请人： Hyungjun Kim ,  Andrew Kellock ,  Stephen Rossnagel

发明人： Hyungjun Kim ,  Andrew Kellock ,  Stephen Rossnagel

IPC分类号： C23C16/50 ,  B32B9/00 ,  C23C16/08 ,  C23C16/34 ,  C23C16/46 ,  C23C28/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/314 ,  H01L21/768 ,  H01L23/52

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76843

摘要： A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.

摘要翻译： 一种用各种氮含量的等离子体增强层沉积TaN的方法。 使用氢和氮等离子体的混合物，膜中的氮含量可以从0到N / Ta = 1.7。 通过在TaN沉积期间关闭氮气流，容易生长TaN / Ta双层，其具有优于单个Ta层或单个TaN层的铜扩散阻挡性能。

公开(公告)号：US20050042865A1

公开(公告)日：2005-02-24

申请号：US10643534

申请日：2003-08-19

申请人： Cyril Cabral ,  Hyungjun Kim ,  Stephen Rossnagel

发明人： Cyril Cabral ,  Hyungjun Kim ,  Stephen Rossnagel

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L29/49 ,  H01L21/425 ,  H01L21/44

CPC分类号： H01L21/28088 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/76841 ,  H01L29/4966 ,  H01L2221/1078

摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

公开(公告)号：US09217408B2

公开(公告)日：2015-12-22

申请号：US13291694

申请日：2011-11-08

申请人： Jiyong Yu ,  Chongah Gwon ,  Junghwan Bang ,  Hyungjun Kim

发明人： Jiyong Yu ,  Chongah Gwon ,  Junghwan Bang ,  Hyungjun Kim

IPC分类号： B60H1/00 ,  F02N11/08

CPC分类号： F02N11/084 ,  B60H1/00778 ,  B60H1/00807 ,  F02D2200/0416 ,  F02N2200/122 ,  Y02T10/48

摘要： A method of determining an Idle Stop and Go (ISG) ventilation condition may include an ISG restriction early step that calculates an expected external air temperature through modeling using information acquired from a vehicle and execute an ISG logic to determine whether ISG entrance is possible based on a current ventilation condition of the vehicle, an ISG restriction proceeding step that detects an voltage of an air-conditioning system, an ISG restriction ascertaining step that determines whether an ISG entrance condition is satisfied, wherein the ISG entrance condition includes comparing the expected external air temperature through modeling with a specific temperature and the voltage of the air-conditioning system with a specific voltage, and an ISG entrance step that controls an engine by performing the ISG entrance when the ISG entrance condition is satisfied.

摘要翻译： 确定空闲停止和停车（ISG）通气条件的方法可以包括ISG限制早期步骤，其通过使用从车辆获得的信息进行建模来计算预期的外部空气温度，并执行ISG逻辑以基于 车辆的当前通风条件，检测空调系统的电压的ISG限制步骤步骤，确定是否满足ISG入口条件的ISG限制确定步骤，其中ISG入口条件包括比较预期的外部空气 温度通过具有特定温度的模拟和具有特定电压的空调系统的电压，以及ISG入口步骤，当满足ISG入口条件时通过执行ISG入口来控制发动机。

公开(公告)号：US09208685B2

公开(公告)日：2015-12-08

申请号：US13319733

申请日：2010-04-12

申请人： Hyungjun Kim

发明人： Hyungjun Kim

IPC分类号： G08G1/00 ,  G08G1/0968 ,  G01C21/34 ,  G01C21/36

CPC分类号： G01C21/362 ,  G01C21/3461 ,  G01C21/3484 ,  G01C21/3617 ,  G08G1/096816 ,  G08G1/09685 ,  G08G1/096866

摘要： A navigation device and a method of operating the same are provided. Further, a method of operating a navigation system including a navigation device, a data server and an electronic device is provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

摘要翻译： 提供导航装置及其操作方法。 此外，提供了一种操作包括导航装置，数据服务器和电子装置的导航系统的方法。 导航装置包括通信单元; 一个显示器 用于接收数据输入的输入单元; 通信单元; 以及用于控制显示器和输入单元的操作的控制器。 控制器通过通信单元连接到数据服务器，向数据服务器请求路径设置信息，从数据服务器接收路径设置信息，获取导航装置的当前位置信息，通过反映获取的位置获取用户移动路径 信息和接收路径设置信息，并且将用户移动路径设置为引导路径。 在这种情况下，基于从另一电子设备输入的用户输入信息，在另一电子设备或数据服务器中生成路径设置信息。

公开(公告)号：US09057923B2

公开(公告)日：2015-06-16

申请号：US13163528

申请日：2011-06-17

申请人： Chong Sup Chang ,  Yoonho Khang ,  Changoh Jeong ,  Sehwan Yu ,  Sangho Park ,  Su-Hyoung Kang ,  Hyungjun Kim ,  Honglong Ning ,  Jinho Hwang ,  Myounggeun Cha ,  Youngki Shin

发明人： Chong Sup Chang ,  Yoonho Khang ,  Changoh Jeong ,  Sehwan Yu ,  Sangho Park ,  Su-Hyoung Kang ,  Hyungjun Kim ,  Honglong Ning ,  Jinho Hwang ,  Myounggeun Cha ,  Youngki Shin

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136295 ,  G02F2201/123 ,  Y10T29/49155

摘要： A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.

摘要翻译： 在除了第一区域之外的第二区域中，在绝缘基板上设置有具有在第一区域中的第一厚度和小于第一厚度的第二厚度的布线。 显示装置包括线。 通过在绝缘基板上形成第一导电层和第二导电层并使用具有不同厚度的光致抗蚀剂层图案蚀刻第一和第二导电层来形成导线。

公开(公告)号：US08377730B2

公开(公告)日：2013-02-19

申请号：US12647777

申请日：2009-12-28

申请人： Seung Yun Yang ,  Gumhye Jeon ,  Hyungjun Kim ,  Jong Yeog Son ,  Chang-Soo Lee ,  Jin Kon Kim ,  Jinseok Byun

发明人： Seung Yun Yang ,  Gumhye Jeon ,  Hyungjun Kim ,  Jong Yeog Son ,  Chang-Soo Lee ,  Jin Kon Kim ,  Jinseok Byun

IPC分类号： H01L21/3205 ,  H01L21/461

CPC分类号： H01L21/02554 ,  H01L21/0262 ,  H01L21/02639

摘要： Provided is a method of manufacturing a sensor structure, where vertically-well-aligned nanotubes are formed and the sensor structure having an excellent performance can be manufactured at the room temperature at low cost by using the nanotubes. The method of manufacturing a sensor structure includes: (a) forming a lower electrode on a substrate; (b) forming an organic template having a pore structure on the lower electrode; (c) forming a metal oxide thin film in the organic template; (d) forming a metal oxide nanotube structure, in which nanotubes are vertically aligned and upper portions thereof are connected to each other, by removing the organic template through a dry etching method; and (e) forming an upper electrode on the upper portions of the nanotubes.

摘要翻译： 提供一种制造传感器结构的方法，其中形成垂直良好排列的纳米管，并且可以通过使用纳米管以低成本在室温下制造具有优异性能的传感器结构。 制造传感器结构的方法包括：（a）在基板上形成下电极; （b）在下电极上形成具有孔结构的有机模板; （c）在有机模板中形成金属氧化物薄膜; （d）通过干蚀刻法除去有机模板，形成金属氧化物纳米管结构，其中纳米管垂直取向并且其上部彼此连接; 和（e）在纳米管的上部形成上部电极。

公开(公告)号：US20060264048A1

公开(公告)日：2006-11-23

申请号：US11461220

申请日：2006-07-31

申请人： Cyril Cabral ,  Steffen Kaldor ,  Hyungjun Kim ,  Stephen Rossnagel

发明人： Cyril Cabral ,  Steffen Kaldor ,  Hyungjun Kim ,  Stephen Rossnagel

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

摘要翻译： 在集成电路的互连结构中，镶嵌结构中的扩散阻挡膜由具有组成TaN x x的膜形成，其中x大于1.2，厚度为0.5至5nm 。

公开(公告)号：US20130054111A1

公开(公告)日：2013-02-28

申请号：US13300285

申请日：2011-11-18

申请人： Daekwang KIM ,  Minyoung Jung ,  Jiyong Yu ,  Junyong Lee ,  Chikung Ahn ,  Hyungjun Kim

发明人： Daekwang KIM ,  Minyoung Jung ,  Jiyong Yu ,  Junyong Lee ,  Chikung Ahn ,  Hyungjun Kim

IPC分类号： F02D28/00

CPC分类号： B60R16/03

摘要： A vehicle generation controlling system for saving fuel includes a battery supplying power to electric components of a vehicle, a generator generating power by using rotational force of an engine and supplying the generated power to the battery and the electric components, and an ECU determining whether generation control is prevented by monitoring vehicle information on the vehicle and operational information on an operation of an electric product of a cooling system among the electric components and controlling the generator to prevent the generation control according to the determination. As a result, the generation control is performed based on whether an electric product of a cooling system is actuated and vehicle information on the vehicle to thereby prevent cooling performance from being deteriorated due to the generation control.

摘要翻译： 一种用于节省燃料的车辆发电控制系统包括：向车辆的电气部件供电的电池，通过使用发动机的旋转力并向电池和电气部件供给发电的发电机发电的发电机;以及ECU 通过监视车辆上的车辆信息和电气部件中的冷却系统的电气产品的操作的操作信息来防止控制，并且控制发电机，以防止根据该确定的发电控制。 结果，基于是否致动冷却系统的电子产品和车辆上的车辆信息来执行发电控制，从而防止冷却性能由于发电控制而劣化。

公开(公告)号：US20090302474A1

公开(公告)日：2009-12-10

申请号：US12583108

申请日：2009-08-13

申请人： Katayun Barmak ,  Hyungjun Kim ,  Ismail C. Noyan ,  Stephen M. Rossnagel

发明人： Katayun Barmak ,  Hyungjun Kim ,  Ismail C. Noyan ,  Stephen M. Rossnagel

IPC分类号： H01L23/532

CPC分类号： H01L21/76846 ,  H01L23/53238

摘要： The present invention relates to a very thin multilayer diffusion barrier for a semiconductor device and fabrication method thereof. The multilayer diffusion barrier according to the present invention is fabricated by forming a very thin, multilayer diffusion barrier composed of even thinner sub-layers, where the sub-layers are only a few atoms thick. The present invention provides a diffusion barrier layer for a semiconductor device which is in a substantially amorphous state and thermodynamically stable, even at high temperatures.

摘要翻译： 本发明涉及一种用于半导体器件的非常薄的多层扩散阻挡层及其制造方法。 根据本发明的多层扩散阻挡层通过形成由更薄的子层组成的非常薄的多层扩散阻挡层来制造，其中子层仅为几个原子厚。 本发明提供一种用于半导体器件的扩散阻挡层，该扩散阻挡层处于基本非晶态并且在高温下具有热力学稳定性。

公开(公告)号：US20050269703A1

公开(公告)日：2005-12-08

申请号：US10709865

申请日：2004-06-02

申请人： Derren Dunn ,  Hyungjun Kim ,  Stephen Rossnagel ,  Soon-Cheon Seo

发明人： Derren Dunn ,  Hyungjun Kim ,  Stephen Rossnagel ,  Soon-Cheon Seo

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.

摘要翻译： 在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。 所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强原子层沉积（PE-ALD）在低k材料衬底上形成保护层。 保护层的氮含量大于其钽含量。 然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。 本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域。 在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。 本发明在低k材料和衬垫材料之间产生尖锐的界面。