公开(公告)号：US20110207320A1

公开(公告)日：2011-08-25

申请号：US13098926

申请日：2011-05-02

申请人： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

发明人： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

IPC分类号： H01L21/768

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

摘要： Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials

摘要翻译： 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料

公开(公告)号：US07968462B1

公开(公告)日：2011-06-28

申请号：US12267298

申请日：2008-11-07

申请人： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

发明人： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

IPC分类号： H01L21/44

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

摘要： Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

摘要翻译： 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。

公开(公告)号：US20070051306A1

公开(公告)日：2007-03-08

申请号：US11217750

申请日：2005-09-01

申请人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

发明人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

IPC分类号： B05C13/02 ,  B05B15/12 ,  B05B3/00 ,  B05C5/00

CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

摘要翻译： 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，以在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

公开(公告)号：US20060029833A1

公开(公告)日：2006-02-09

申请号：US11199620

申请日：2005-08-09

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： B05D1/18 ,  B22D7/00 ,  B22D25/00

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

摘要翻译： 提供了一种方法，其包括在无电沉积工艺期间分配和去除不同的沉积溶液以形成复合层的不同子膜。 另一种方法包括通过无电沉积工艺形成膜，随后退火微电子拓扑以诱导膜内的元素的扩散。 另一种方法包括从单个沉积溶液重复不同的沉积生长机理，即界面无电还原和化学吸附，以形成复合层的不同子膜。 由一种或多种方法产生的微电子拓扑包括与具有第一元素的体积浓度的结构接触形成的膜。 膜具有周期性的连续区域，每个区域各自包括浓度高于设定量的第二元素的区域和具有第二元素的浓度小于设定量的区域。

公开(公告)号：US20050181134A1

公开(公告)日：2005-08-18

申请号：US11102143

申请日：2005-04-08

申请人： Igor Ivanov ,  Weiguo Zhang

发明人： Igor Ivanov ,  Weiguo Zhang

IPC分类号： H01L21/00 ,  H01L21/687 ,  B05D3/04

CPC分类号： H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

公开(公告)号：US20060076244A1

公开(公告)日：2006-04-13

申请号：US11289998

申请日：2005-11-30

申请人： Chiu Ting ,  Igor Ivanov

发明人： Chiu Ting ,  Igor Ivanov

IPC分类号： C25D7/12 ,  C25D5/10 ,  C25D17/00

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A damascene process for introducing copper into metallization layers in microelectronic structures includes a step of forming an enhancement layer of a metal alloy, such as a copper alloy or Co—W—P, over the barrier layer, using PVD, CVD or electrochemical deposition prior to electrochemically depositing copper metallization. The enhancement layer has a thickness from 10 Å to 100 Å and conformally covers the discontinuities, seams and grain boundary defects in the barrier layer. The enhancement layer provides a conductive surface onto which a metal layer, such as copper metallization, may be applied with electrochemical deposition. Alternatively, a seed layer may be deposited over the enhancement layer prior to copper metallization.

摘要翻译： 用于在微电子结构中将铜引入金属化层的镶嵌工艺包括在电化学上之前使用PVD，CVD或电化学沉积在阻挡层上形成诸如铜合金或Co-WP的金属合金增强层的步骤 沉积铜金属化。 增强层具有从10到100埃的厚度，并且保形地覆盖阻挡层中的不连续性，接缝和晶界缺陷。 增强层提供导电表面，在其上可以用电化学沉积施加金属层，例如铜金属化。 或者，在铜金属化之前，种子层可以沉积在增强层上。

公开(公告)号：US20060029727A1

公开(公告)日：2006-02-09

申请号：US11200324

申请日：2005-08-09

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： C23C26/00 ,  B05D1/18

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements.

公开(公告)号：US06913651B2

公开(公告)日：2005-07-05

申请号：US10103015

申请日：2002-03-22

申请人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288 ,  B05C5/00 ,  B05C11/00

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

公开(公告)号：US06902605B2

公开(公告)日：2005-06-07

申请号：US10379692

申请日：2003-03-06

申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

IPC分类号： C23C18/36 ,  C23C18/50 ,  C23C18/34 ,  B05D1/18

CPC分类号： H01L21/288 ,  C23C18/36 ,  C23C18/50 ,  H01L21/76849

摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

摘要翻译： 本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

公开(公告)号：US06183998B2

公开(公告)日：2001-02-06

申请号：US09183950

申请日：1998-10-31

申请人： Igor Ivanov ,  Dirk Löffert ,  Jie Kang ,  Joachim Ribbe ,  Kerstin Steinert

发明人： Igor Ivanov ,  Dirk Löffert ,  Jie Kang ,  Joachim Ribbe ,  Kerstin Steinert

IPC分类号： C12P1934

CPC分类号： C12N9/99 ,  C12N9/1252 ,  C12Q1/6848 ,  C12Q2527/125 ,  C12Q2527/101

摘要： A method for the amplification of a target nucleic acid is disclosed comprising the steps of reacting a nucleic acid with an amplification reaction mixture and a modified thermostable enzyme, wherein said modified thermostable polymerase is prepared by a reaction of a mixture of a thermostable polymerase and a chemical modifying reagent. The chemical modification reagent is an aldehyde, preferably formaldehyde. Essentially complete inactivation of the enzyme at ambient temperatures is achieved, with recovery of enzymatic activity at temperatures above 50° C.

摘要翻译： 公开了扩增靶核酸的方法，其包括使核酸与扩增反应混合物和修饰的热稳定酶反应的步骤，其中所述修饰的热稳定聚合酶通过热稳定聚合酶和 化学改性剂。 化学改性剂是醛，优选甲醛。 实现了在环境温度下酶的基本完全失活，并且在高于50℃的温度下回收酶活性。