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公开(公告)号：US08278215B2
公开(公告)日：2012-10-02
申请号：US13098926
申请日：2011-05-02
申请人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
发明人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02068 , H01L21/288 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76879 , H01L31/022425 , H01L31/18 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/16 , Y02E10/50
摘要： Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.
摘要翻译： 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。
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公开(公告)号：US20110207320A1
公开(公告)日：2011-08-25
申请号：US13098926
申请日：2011-05-02
申请人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
发明人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02068 , H01L21/288 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76879 , H01L31/022425 , H01L31/18 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/16 , Y02E10/50
摘要： Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials
摘要翻译： 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料
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公开(公告)号：US07968462B1
公开(公告)日：2011-06-28
申请号：US12267298
申请日：2008-11-07
申请人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
发明人： Zhi-Wen Sun , Bob Kong , Igor Ivanov , Tony Chiang
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02068 , H01L21/288 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76879 , H01L31/022425 , H01L31/18 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/16 , Y02E10/50
摘要： Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.
摘要翻译： 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。
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公开(公告)号：US08545998B2
公开(公告)日：2013-10-01
申请号：US13333509
申请日：2011-12-21
申请人： Bob Kong , Igor Ivanov , Zhi-Wen Sun , Jinhong Tong
发明人： Bob Kong , Igor Ivanov , Zhi-Wen Sun , Jinhong Tong
CPC分类号： C23C18/44 , C23C18/1605 , C23C18/1607 , C23C18/1637 , C23C18/1844 , H01L21/02068 , H01L21/0332 , H01L21/288 , H01L21/3105 , H01L21/76814 , H01L21/76849 , H01L21/7687 , H01L27/1052 , H01L28/65 , Y10T428/12493 , Y10T428/12875 , Y10T428/12903 , Y10T428/24917
摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.
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公开(公告)号：US20120091590A1
公开(公告)日：2012-04-19
申请号：US13333509
申请日：2011-12-21
申请人： Bob Kong , Zhi-Wen Sun , Igor Ivanov , Jihong Tong
发明人： Bob Kong , Zhi-Wen Sun , Igor Ivanov , Jihong Tong
IPC分类号： H01L23/535
CPC分类号： C23C18/44 , C23C18/1605 , C23C18/1607 , C23C18/1637 , C23C18/1844 , H01L21/02068 , H01L21/0332 , H01L21/288 , H01L21/3105 , H01L21/76814 , H01L21/76849 , H01L21/7687 , H01L27/1052 , H01L28/65 , Y10T428/12493 , Y10T428/12875 , Y10T428/12903 , Y10T428/24917
摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.
摘要翻译： 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。
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公开(公告)号：US20100055422A1
公开(公告)日：2010-03-04
申请号：US12200841
申请日：2008-08-28
申请人： Bob Kong , Zhi-Wen Sun , Igor Ivanov , Jinhong Tong
发明人： Bob Kong , Zhi-Wen Sun , Igor Ivanov , Jinhong Tong
CPC分类号： C23C18/44 , C23C18/1605 , C23C18/1607 , C23C18/1637 , C23C18/1844 , H01L21/02068 , H01L21/0332 , H01L21/288 , H01L21/3105 , H01L21/76814 , H01L21/76849 , H01L21/7687 , H01L27/1052 , H01L28/65 , Y10T428/12493 , Y10T428/12875 , Y10T428/12903 , Y10T428/24917
摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.
摘要翻译： 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。
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公开(公告)号：US08318534B2
公开(公告)日：2012-11-27
申请号：US13098632
申请日：2011-05-02
申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
发明人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
IPC分类号： H01L21/00
CPC分类号： H01L45/10 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
摘要翻译： 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。
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公开(公告)号：US20110204311A1
公开(公告)日：2011-08-25
申请号：US13098632
申请日：2011-05-02
申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
发明人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/10 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
摘要翻译： 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。
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公开(公告)号：US07977152B2
公开(公告)日：2011-07-12
申请号：US12463319
申请日：2009-05-08
申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
发明人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
IPC分类号： H01L21/00
CPC分类号： H01L45/10 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
摘要翻译： 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。
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公开(公告)号：US20090278110A1
公开(公告)日：2009-11-12
申请号：US12463319
申请日：2009-05-08
申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
发明人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
CPC分类号： H01L45/10 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
摘要翻译： 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。
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