公开(公告)号：US20130027809A1

公开(公告)日：2013-01-31

申请号：US13136182

申请日：2011-07-26

申请人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

发明人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

IPC分类号： G11B5/187 ,  C25D5/02

CPC分类号： C25D5/022 ,  G11B5/3116 ,  G11B5/3163

摘要： A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.

摘要翻译： 公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。 这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼，而另一个子结构被优化用于高饱和磁化强度。

公开(公告)号：US08238059B1

公开(公告)日：2012-08-07

申请号：US13066095

申请日：2011-04-06

申请人： Yuhui Tang ,  Lijie Guan ,  Tai Min ,  Suping Song

发明人： Yuhui Tang ,  Lijie Guan ,  Tai Min ,  Suping Song

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A PMR writer is disclosed wherein one or more of a trailing shield, leading shield, and side shields are composites with a first section made of an anisotropic (-Ku) magnetic layer adjoining a gap layer and a second section comprised of an isotropic soft magnetic layer formed on a side of the first section that faces away from the main pole. There may be a non-magnetic Ru layer between each first and second section to prevent interlayer coupling. Each first section has a hard axis in a direction toward the main pole and is comprised of hcp-CoIr, dhcp-CoFe, a′-Fe—C, or NiAs-type Mn50Sb50 with a thickness from 50 to 500 nm. As a result, flux leakage from the main pole to a shield structure is reduced and area density is increased. A method for fabricating a composite shield structure is also provided.

摘要翻译： 公开了一种PMR写入器，其中一个或多个后屏蔽，前屏蔽和侧屏蔽是与邻接间隙层的各向异性（-Ku）磁性层制成的第一部分和由各向同性软磁体组成的第二部分的复合材料 层形成在第一部分的远离主极的一侧上。 在每个第一和第二部分之间可以存在非磁性Ru层以防止层间耦合。 每个第一部分具有朝向主极的方向的硬轴，并且由厚度为50至500nm的hcp-CoIr，dhcp-CoFe，a'-Fe-C或NiAs型Mn50Sb50组成。 结果，从主极到屏蔽结构的磁通泄漏减少并且面积密度增加。 还提供了一种制造复合屏蔽结构的方法。

公开(公告)号：US20120058574A1

公开(公告)日：2012-03-08

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/02

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US20110284977A1

公开(公告)日：2011-11-24

申请号：US13136194

申请日：2011-07-26

申请人： Tai Min ,  Cheng Horng ,  Po Kang Wang

发明人： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

摘要翻译： 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

公开(公告)号：US20110014500A1

公开(公告)日：2011-01-20

申请号：US12460412

申请日：2009-07-17

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC分类号： G11B5/706 ,  C23C14/34 ,  B44C1/22

CPC分类号： H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

摘要翻译： 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

公开(公告)号：US20100176429A1

公开(公告)日：2010-07-15

申请号：US12661345

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US07408748B2

公开(公告)日：2008-08-05

申请号：US11716869

申请日：2007-03-12

申请人： Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

发明人： Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability and can cause amplitude loss and side reading. This problem has been overcome by placing an additional layer of soft magnetic material on the conductive layer. The added layer prevents flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to nearby magnetic layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，并可能导致振幅损失和侧面读数。 通过在导电层上放置附加的软磁性材料层已经克服了这个问题。 添加的层防止漏电流到间隙区域。 必须包括非磁性层以防止交换耦合到附近的磁性层。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。

公开(公告)号：US07394122B2

公开(公告)日：2008-07-01

申请号：US11001382

申请日：2004-12-01

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L29/76 ,  H01L43/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

摘要翻译： 在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

公开(公告)号：US20070189064A1

公开(公告)日：2007-08-16

申请号：US11353326

申请日：2006-02-14

申请人： Tai Min ,  Po-Kang Wang

发明人： Tai Min ,  Po-Kang Wang

IPC分类号： H01L21/00 ,  G11C11/00 ,  H01L31/00 ,  H01L29/76 ,  H01L29/94 ,  G11C5/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607

摘要： A random access memory cell is described which is capable of storing multiple information states in a single physical bit. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.

摘要翻译： 描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元。 基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。 通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

公开(公告)号：US07132707B2

公开(公告)日：2006-11-07

申请号：US10910725

申请日：2004-08-03

申请人： Tai Min ,  Yimin Guo ,  Pokang Wang

发明人： Tai Min ,  Yimin Guo ,  Pokang Wang

IPC分类号： H01L29/76 ,  H01L29/82 ,  H01L23/552 ,  H01L27/20

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

摘要翻译： 在垂直分离的磁性包层超薄正交字和厚度小于100nm的位线的交点上方或下方形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 字和位线还包括在其远离电池的表面上形成的高磁导率的软磁性层，以进一步改善磁场。 具有这种细线的电池的制造实际上被简化为更薄的沉积的结果，并且消除了在图案化和抛光期间通过CMP去除材料的必要性，由此在线和无电池层之间产生均匀的间隔。