公开(公告)号：US11018262B2

公开(公告)日：2021-05-25

申请号：US16318597

申请日：2017-07-14

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.

公开(公告)号：US10516053B2

公开(公告)日：2019-12-24

申请号：US15370392

申请日：2016-12-06

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3225 ,  G09G3/00 ,  H01L29/49 ,  H01L27/32

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

公开(公告)号：US10235930B2

公开(公告)日：2019-03-19

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  G09G5/10 ,  G09G5/00 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US10141185B2

公开(公告)日：2018-11-27

申请号：US15401157

申请日：2017-01-09

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G5/00 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/861 ,  H01L27/32

摘要： An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

公开(公告)号：US09972274B2

公开(公告)日：2018-05-15

申请号：US15032192

申请日：2014-10-23

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： H01L27/12 ,  G09G3/36 ,  H01L29/786 ,  H01L27/32

CPC分类号： G09G3/3696 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0278 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/7869

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US09748097B2

公开(公告)日：2017-08-29

申请号：US14780190

申请日：2014-03-26

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/10 ,  H01L21/02 ,  C09D1/00 ,  H01L29/786 ,  H01L29/66 ,  C09D5/24 ,  H01L29/24

CPC分类号： H01L21/02628 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02565 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

公开(公告)号：US20150001531A1

公开(公告)日：2015-01-01

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US09112039B2

公开(公告)日：2015-08-18

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US20140353648A1

公开(公告)日：2014-12-04

申请号：US14360791

申请日：2012-11-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/247 ,  C01G19/00 ,  C01G30/00 ,  C01P2002/72 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/861

摘要： To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

摘要翻译： 提供包括氧化物的p型氧化物，其中氧化物包括：Cu; 和选自p族元素的并且可以处于平衡状态的元素M作为离子存在，其中平衡状态是其中存在p的全部电子的状态 - 最外壳的眶骨丢失，并且损失最外壳的全部电子的状态，并且其中p型氧化物是无定形的。

公开(公告)号：US09761673B2

公开(公告)日：2017-09-12

申请号：US14007705

申请日：2012-03-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： C01G3/02 ,  C01F11/02 ,  H01L29/24 ,  H01L29/786 ,  C01F5/06 ,  C01F11/04 ,  G09G3/32 ,  H01L29/04 ,  H01L27/32

CPC分类号： H01L29/242 ,  C01F5/06 ,  C01F11/04 ,  C01G3/02 ,  C01P2002/02 ,  G09G3/32 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78693

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x