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5368 条记录 (耗时 0.041 秒)

    Semiconductor device and manufacturing method thereof
    21.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US06664145B1

    公开(公告)日：2003-12-16

    申请号：US09619732

    申请日：2000-07-19

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    IPC分类号： H01L2100

    CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

    摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

    MIS semiconductor device having an LDD structure and a manufacturing method therefor
    22.
    发明授权
    MIS semiconductor device having an LDD structure and a manufacturing method therefor 有权
    具有LDD结构的MIS半导体器件及其制造方法

    公开(公告)号：US06284577B1

    公开(公告)日：2001-09-04

    申请号：US09383415

    申请日：1999-08-26

    申请人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Yasuhiko Takemura

    发明人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Yasuhiko Takemura

    IPC分类号： H01L2100

    CPC分类号： H01L29/6659 ,  H01L21/28105 ,  H01L29/7836

    摘要： It is intended to provide a method of forming a gate overlap lightly doped impurity region (GOLD). After a gate insulating film is formed by a material mainly made of silicon oxide and a gate electrode is formed with, for instance, silicon, lightly doped impurity regions are formed. A coating mainly made of silicon is formed on the entire surface including the surface of the gate electrode. Side walls mainly made of silicon are formed on the side faces of the gate electrode by anisotropically or semi-anisotropically etching the thus-formed coating in an atmosphere of ClF3, for instance. In this etching step, since a selective etching ratio of the side walls to the gate insulating film is sufficiently large, etching of the gate insulating film is negligible. A source and a drain are then formed by doping an impurity at a high concentration using the gate electrode and the side walls as a mask.

    摘要翻译： 旨在提供一种形成栅极重叠轻掺杂杂质区（GOLD）的方法。 在由主要由氧化硅制成的材料形成栅极绝缘膜之后，形成例如硅的栅电极，形成轻掺杂杂质区。 主要由硅制成的涂层形成在包括栅极表面的整个表面上。 例如，通过在ClF 3的气氛中进行各向异性或半各向异性蚀刻如此形成的涂层，在栅电极的侧面上形成主要由硅构成的侧壁。 在该蚀刻步骤中，由于侧壁与栅极绝缘膜的选择性蚀刻比例足够大，所以栅极绝缘膜的蚀刻可以忽略不计。 然后通过使用栅电极和侧壁作为掩模以高浓度掺杂杂质形成源极和漏极。

    Light-emitting device
    23.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09040998B2

    公开(公告)日：2015-05-26

    申请号：US13530392

    申请日：2012-06-22

    申请人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

    发明人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

    IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

    CPC分类号： H01L27/3246 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5237 ,  H01L51/5259

    摘要： A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

    摘要翻译： 提供抑制湿气性能下降的发光装置。 发光装置具有其中具有多孔结构的分隔件围绕每个发光元件的结构。 具有多孔结构的分隔物物理吸附水分; 因此，在发光装置中，隔板在与发光元件非常接近的部分处起吸湿性的作用，从而能够有效地吸附残留在发光元件中或从外部进入的水分或水蒸汽 。 因此，可以有效地抑制由于水分或水蒸气导致的发光装置的性能的降低。

    Semiconductor device and manufacturing method thereof
    24.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08834989B2

    公开(公告)日：2014-09-16

    申请号：US13295278

    申请日：2011-11-14

    申请人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

    发明人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

    IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

    CPC分类号： H01L27/12 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T428/24421

    摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.

    摘要翻译： 本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。 一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极 插入其间。 在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低 岛状半导体层。

    Display device and manufacturing method of display device
    25.
    发明授权
    Display device and manufacturing method of display device 有权
    显示装置及显示装置的制造方法

    公开(公告)号：US08674366B2

    公开(公告)日：2014-03-18

    申请号：US12904536

    申请日：2010-10-14

    申请人： Hideomi Suzawa ,  Shunpei Yamazaki

    发明人： Hideomi Suzawa ,  Shunpei Yamazaki

    IPC分类号： H01L29/04 ,  H01L29/22

    CPC分类号： H01L51/56 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5246 ,  H01L51/5259 ,  H01L2251/5315 ,  H01L2251/5323

    摘要： According to one feature of the present invention, a display device is manufactured according to the steps of forming a semiconductor layer; forming a gate insulating layer over the semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming source and drain electrode layers in contact with the semiconductor layer; forming a first electrode layer electrically connected to the source or drain electrode layer; forming an inorganic insulating layer over part of the first electrode layer, the gate electrode layer, the source electrode layer, and the drain electrode layer; subjecting the inorganic insulating layer and the first electrode layer to plasma treatment; forming an electroluminescent layer over the inorganic insulating layer and the first electrode layer which are subjected to plasma treatment; and forming a second electrode layer over the electroluminescent layer.

    摘要翻译： 根据本发明的一个特征，根据形成半导体层的步骤制造显示装置; 在所述半导体层上形成栅极绝缘层; 在所述栅绝缘层上形成栅电极层; 形成与半导体层接触的源极和漏极电极层; 形成电连接到所述源极或漏极电极层的第一电极层; 在所述第一电极层，所述栅极电极层，所述源极电极层和所述漏极电极层的一部分上形成无机绝缘层; 对无机绝缘层和第一电极层进行等离子体处理; 在经过等离子体处理的无机绝缘层和第一电极层上形成电致发光层; 以及在所述电致发光层上形成第二电极层。

    Light emitting device
    27.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08421352B2

    公开(公告)日：2013-04-16

    申请号：US13021019

    申请日：2011-02-04

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Ichiro Uehara

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Ichiro Uehara

    IPC分类号： H05B33/00

    CPC分类号： H01L27/323 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3246 ,  Y10S428/917

    摘要： In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented.

    摘要翻译： 在具有阳极的EL元件中，形成在阳极上的绝缘膜（凸块）以及形成在绝缘膜上的EL膜和阴极，绝缘膜的底端部分和顶端部分都形成为 具有曲面。 绝缘膜的中心部分的锥角设定在35°〜70°的范围内，从而防止形成EL膜和阴极的成膜表面的梯度急剧变化。 在如此形成的成膜表面上，EL膜和阴极可以形成为均匀的厚度，从而防止了每个EL膜和阴极中出现不连续现象。