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    Semiconductor device including semiconductor film with outer end having tapered shape
    2.
    发明授权
    Semiconductor device including semiconductor film with outer end having tapered shape 有权
    半导体器件包括具有锥形形状的具有外端的半导体膜

    公开(公告)号：US08461596B2

    公开(公告)日：2013-06-11

    申请号：US13288300

    申请日：2011-11-03

    申请人： Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Shunpei Yamazaki

    发明人： Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Shunpei Yamazaki

    IPC分类号： H01L27/14 ,  H01L21/00

    CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/06 ,  H01L29/66765 ,  H01L29/78669

    摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask.

    摘要翻译： 本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。 在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一 非晶半导体膜1001成锥形。 由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错型TFT。

    Light-Emitting Device and Manufacturing Method of the Light-Emitting Device
    3.
    发明申请
    Light-Emitting Device and Manufacturing Method of the Light-Emitting Device 有权
    发光装置及发光装置的制造方法

    公开(公告)号：US20120326143A1

    公开(公告)日：2012-12-27

    申请号：US13530392

    申请日：2012-06-22

    申请人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

    发明人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

    IPC分类号： H01L33/40 ,  H01L29/12

    CPC分类号： H01L27/3246 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5237 ,  H01L51/5259

    摘要： A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

    摘要翻译： 提供抑制湿气性能下降的发光装置。 发光装置具有其中具有多孔结构的分隔件围绕每个发光元件的结构。 具有多孔结构的分隔物物理吸附水分; 因此，在发光装置中，隔板在与发光元件非常接近的部分处起吸湿性的作用，从而能够有效地吸附残留在发光元件中或从外部进入的水分或水蒸汽 。 因此，可以有效地抑制由于水分或水蒸气导致的发光装置的性能的降低。

    Semiconductor Device and Manufacturing Method Thereof
    4.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US20120058631A1

    公开(公告)日：2012-03-08

    申请号：US13295278

    申请日：2011-11-14

    申请人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

    发明人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

    IPC分类号： H01L21/20 ,  H01L21/28

    CPC分类号： H01L27/12 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T428/24421

    摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.

    摘要翻译： 本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。 一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极 插入其间。 在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低 岛状半导体层。

    Semiconductor device and manufacturing method thereof
    6.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07968890B2

    公开(公告)日：2011-06-28

    申请号：US12009754

    申请日：2008-01-22

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

    摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

    摘要翻译： 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。

    Semiconductor device and manufacturing method thereof
    8.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20090101901A1

    公开(公告)日：2009-04-23

    申请号：US12009754

    申请日：2008-01-22

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

    摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

    摘要翻译： 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US07335911B2

    公开(公告)日：2008-02-26

    申请号：US10848189

    申请日：2004-05-18

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

    摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

    摘要翻译： 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。