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公开(公告)号:US20240347490A1
公开(公告)日:2024-10-17
申请号:US18751563
申请日:2024-06-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho Ahn , Jiwon KIM , Sungmin HWANG , Joonsung LIM , Sukkang SUNG
IPC: H01L23/00 , H01L25/065 , H01L25/18
CPC classification number: H01L24/08 , H01L25/0657 , H01L25/18 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
Abstract: A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.
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公开(公告)号:US20230121035A1
公开(公告)日:2023-04-20
申请号:US18082281
申请日:2022-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sewoong KIM , Woosuk KANG , Sohyeon KIM , Jeonghoon KIM , Jiwon KIM , Yoseb OH , Donguk CHOI , Minhwa HONG
Abstract: A wearable electronic device according to an embodiment may include a metal frame forming at least a portion of a side surface of the wearable electronic device, a display mounted on the metal frame, a rear cover forming a rear surface of the wearable electronic device, a printed circuit board (PCB) disposed in a space formed by the rear cover and the metal frame, and a wireless communication circuit disposed on the PCB, wherein the wireless communication circuit feeds power to a first point of the metal frame, which having a first height from the rear cover, to receive a signal in a first frequency band, and feeds power to a second point of the metal frame, which has a second height from the rear cover that is higher than the first height to receive a signal in a second frequency band higher than the first frequency band.
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公开(公告)号:US20230012115A1
公开(公告)日:2023-01-12
申请号:US17570874
申请日:2022-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho KIM , Jiwon KIM , Joonsung KIM , Sukkang SUNG , Sangdon LEE , Jong-Min LEE , Euntaek JUNG
IPC: H01L27/11582 , H01L27/11556 , H01L27/11529 , H01L27/11573
Abstract: A three-dimensional semiconductor devices including a substrate, a stack structure including gate electrodes on the substrate and string selection electrodes spaced apart from each other on the gate electrodes, a first separation structure running in a first direction across the stack structure and being between the string selection electrodes, vertical channel structures penetrating the stack structure, and bit lines connected to the vertical channel structures and extending in a second direction may be provided. A first subset of the vertical channel structures is connected in common to one of the bit lines. The vertical channel structures of the first subset may be adjacent to each other in the second direction across the first separation structure. Each of the string selection electrodes may surround each of the vertical channel structures of the first subset.
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公开(公告)号:US20220122933A1
公开(公告)日:2022-04-21
申请号:US17460873
申请日:2021-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungmin HWANG , Jiwon KIM , Jaeho AHN , Joonsung LIM , Sukkang SUNG
IPC: H01L23/00 , H01L25/065 , H01L25/18 , H01L25/00
Abstract: A memory device including a first structure; and a second structure on the first structure, wherein the first structure includes a first substrate; a peripheral circuit on the first substrate; a first insulating layer covering the first substrate and the peripheral circuit; and a first bonding pad on the first insulating layer, the second structure includes a second substrate; a memory cell array on a first surface of the second substrate; a second insulating layer covering the first surface of the second substrate and the memory cell array; a conductive pattern at least partially recessed from a second surface of the second substrate; and a second bonding pad on the second insulating layer, the first bonding pad is in contact with the second bonding pad, and the conductive pattern is spaced apart from the second insulating layer.
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公开(公告)号:US20210266609A1
公开(公告)日:2021-08-26
申请号:US17183835
申请日:2021-02-24
Applicant: Samsung Electronics Co., Ltd.
IPC: H04N21/218 , H04N21/44 , H04N21/226 , H04N21/222 , G06T19/00 , H04N13/161
Abstract: An example method, performed by an edge data network, of transmitting video content includes: obtaining first bearing information from an electronic device connected to the edge data network; determining second predicted bearing information based on the first bearing information; determining a second predicted partial image corresponding to the second predicted bearing information; transmitting, to the electronic device, a second predicted frame generated by encoding the second predicted partial image; obtaining, from the electronic device, second bearing information corresponding to a second partial image; comparing the second predicted bearing information to the obtained second bearing information; generating, based on a result of the comparing, a compensation frame using at least two of a first partial image corresponding to the first bearing information, the second predicted partial image, or the second partial image corresponding to the second bearing information; and transmitting the generated compensation frame to the electronic device based on the result of the comparing.
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公开(公告)号:US20200152654A1
公开(公告)日:2020-05-14
申请号:US16514557
申请日:2019-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-Min HWANG , Joon-Sung LIM , Jiyoung KIM , Jiwon KIM , Woosung YANG
IPC: H01L27/11578 , H01L27/11573 , H01L27/11568 , H01L27/11565 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11551
Abstract: Disclosed are three-dimensional semiconductor memory devices and methods of fabricating the same. A three-dimensional semiconductor memory device including a substrate including a cell array region and a connection region, an electrode structure including a plurality of electrodes and a plurality of dielectric layers alternately stacked on the substrate, the electrode structure having a stepwise portion on the connection region, an etch stop structure on the stepwise portion of the electrode structure, and a plurality of contact plugs on the connection region, the contact plugs penetrating the etch stop structure and connected to corresponding pad portions of the electrodes, respectively, may be provided. The etch stop structure may include an etch stop pattern and a horizontal dielectric layer, which has have a uniform thickness and covers a top surface and a bottom surface of an etch stop pattern.
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公开(公告)号:US20180336011A1
公开(公告)日:2018-11-22
申请号:US15984630
申请日:2018-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jiwon KIM , Kyuok CHOI , Chaekyung LEE
IPC: G06F3/16 , H04L12/58 , G06F3/0482
CPC classification number: G06F3/167 , G06F3/0482 , G06Q10/1095 , H04L51/046 , H04L51/10
Abstract: The present disclosure relates to an electronic device. The electronic device may include: a display; a communication module comprising communication circuitry; a processor; and a memory configured to store information on an application executed by the processor and information on a screen output through the display, wherein the processor is configured to receive an input for execution of a first application related to provision of a communication service, to determine information related to an other party of the communication service based on the received input, to determine whether the information related to the other party is included on a screen for a second application output through the display if the input is received, and to transmit the information related to the other party included on the screen for the second application to the other party through the communication module, if the information related to the other party is included on the screen for the second application.
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公开(公告)号:US20250167115A1
公开(公告)日:2025-05-22
申请号:US18925771
申请日:2024-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jimo GU , Bumkyu KANG , Ahreum LEE , Junhyoung KIM , Jiwon KIM , Sukkang SUNG
IPC: H01L23/528 , H01L23/00 , H01L23/522 , H01L23/532 , H01L25/065 , H10B12/00 , H10B41/35 , H10B41/41 , H10B43/35 , H10B43/40 , H10B80/00
Abstract: A semiconductor device may include a peripheral circuit structure first bonding pads connected to peripheral circuits on a semiconductor substrate; and a cell array structure including second bonding pads bonded to the first bonding pads. The cell array structure may include a separation structure penetrating a stack structure, vertical channel patterns penetrating the stack structure, a source conductive pattern connected to the vertical channel patterns on the stack structure, an upper dielectric layer covering the source conductive pattern, and an upper via that penetrates the upper dielectric layer. The stack structure may include interlayer dielectric layers and conductive patterns that are vertically alternately stacked. The separation structure may include a stop pattern on a dielectric pattern. The source conductive pattern may be in contact with a top surface of the stop pattern. The upper via may connect to the source conductive pattern on the stop pattern.
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公开(公告)号:US20230410831A1
公开(公告)日:2023-12-21
申请号:US18204190
申请日:2023-05-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soofeel KIM , Jiwon KIM , Jongtae KIM , Jaeyong HWANG
IPC: G10L21/028 , G10L17/02
CPC classification number: G10L21/028 , G10L17/02
Abstract: An electronic apparatus includes: a memory storing at least one instruction; and at least one processor configured to divide audio data into a plurality of periods to include overlapping regions, acquire an audio feature from each of the plurality of divided periods, identify a first audio source and a second audio source in each of the plurality of divided periods based on the audio feature, and acquire first audio data corresponding to the first audio source and second audio data corresponding to the second audio source from the audio data.
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公开(公告)号:US20230333598A1
公开(公告)日:2023-10-19
申请号:US18097654
申请日:2023-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chulhyo YOON , Jungchul AN , Jiwon KIM , Hosang NAM
CPC classification number: G06F1/1652 , H05K5/0226 , G06F3/046 , G06F1/1681 , G06F1/1656 , G06F2203/04102
Abstract: An electronic device includes: a flexible display; an input module disposed between a surface formed by a first housing and a second housing supporting the flexible display and the flexible display, and including a first pattern layer and a second pattern layer; and waterproof adhesives disposed on each of the first housing and the second housing, wherein the first pattern layer is disposed on a surface of the input module facing the waterproof adhesives, and includes first signal patterns and first dummy patterns disposed in an area corresponding to the waterproof adhesive, and wherein the second pattern layer is disposed on the other side of the input module facing the flexible display.
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