公开(公告)号：US20220230872A1

公开(公告)日：2022-07-21

申请号：US17398219

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae JANG ,  Seungmin SHIN ,  Kuntack LEE ,  Seungho KIM ,  Younghoo KIM ,  Taehong KIM ,  Sunghyun PARK

IPC: H01L21/02 ,  B08B3/10 ,  B08B7/00 ,  B08B3/08

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

公开(公告)号：US20200152486A1

公开(公告)日：2020-05-14

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo KIM ,  Kuntack LEE ,  Yong-Jhin CHO ,  Chawon KOH ,  Sunghyun PARK ,  Hyosan LEE ,  Ji Hoon CHA ,  Soo Young CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。

公开(公告)号：US20140360041A1

公开(公告)日：2014-12-11

申请号：US14246274

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Yongsun KO ,  Kuntack LEE ,  Kyoungseob KIM ,  SeokHoon KIM ,  Jung-Min OH ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/02 ,  F26B25/06

CPC classification number: F26B25/06 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括：储存容器，存储流体;以及转换槽，通过连接管连接到储存箱，并通过供给管连接到室。 转换罐包括用于加热流体的加热器。

公开(公告)号：US20130199726A1

公开(公告)日：2013-08-08

申请号：US13755533

申请日：2013-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongjin KIM ,  Kyoungseob KIM ,  SungHo SHIN ,  Kuntack LEE ,  Kihong CHO

IPC: H01L21/465

CPC classification number: H01L21/30625 ,  B24C1/08 ,  H01L21/02021 ,  H01L21/02057 ,  H01L21/465 ,  H01L21/67219

Abstract: A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid.

Abstract translation: 基板处理方法可以包括将含有研磨剂的流体喷射到基板上，并且使用喷射流体对基板进行抛光。