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21.发明授权公开(公告)号：US10964347B2
公开(公告)日：2021-03-30
申请号：US15357333
申请日：2016-11-21
发明人： Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Justin Glen Brons , Steve C. Riemer , Jie Gong , Michael Allen Seigler
IPC分类号： G11B11/00 , G11B5/40 , G11B13/08 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , C23C14/58 , G11B5/31 , G11B5/48 , G11B5/60 , G11B7/1387 , G11B7/24059 , B32B15/01 , G11B5/00 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02
摘要： A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.
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公开(公告)号：US10482914B2
公开(公告)日：2019-11-19
申请号：US15952506
申请日：2018-04-13
发明人： Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Jie Gong , Michael Allen Seigler
IPC分类号： G11B5/00 , G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , B32B15/01
摘要： A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
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23.发明授权Materials for near field transducers and near field transducers containing same 有权用于近场换能器和含有相同场的换能器的近场换能器的材料公开(公告)号：US09286931B2
公开(公告)日：2016-03-15
申请号：US14313551
申请日：2014-06-24
IPC分类号： G11B11/00 , G11B13/08 , G11B5/31 , G11B7/1387 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00 , B32B15/01
CPC分类号： G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要： A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
摘要翻译： 一种形成近场传感器（NFT）层的方法，所述方法包括沉积初级元件的膜，所述膜具有膜厚度和膜的宽度; 以及将至少一个次要元件注入到所述主要元件中，其中所述NFT层包括掺杂有所述至少一个次要元件的所述主要元件的膜。
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24.发明授权Devices including at least one adhesion layer and methods of forming adhesion layers 有权包括至少一个粘合层的装置和形成粘合层的方法公开(公告)号：US08971161B2
公开(公告)日：2015-03-03
申请号：US14313574
申请日：2014-06-24
发明人： Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Andrew J. Boyne , Michael Allen Seigler , Sethuraman Jayashankar
CPC分类号： G11B5/314 , B05D1/36 , G11B5/3106 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B5/84 , G11B5/85 , G11B5/851 , G11B5/858 , G11B7/1387 , G11B2005/0021
摘要： Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof.
摘要翻译： 包括近场换能器（NFT），NFT具有盘和钉的装置以及具有五个表面的钉; 至少一个粘合层位于钉的五个表面中的至少一个表面上，粘合层包括以下中的一种或多种：铼，锇，铱，铂，铪，钌，锝，铑，钯，铍， 铝，锰，铟，硼及其组合氧化铍，氧化硅，氧化铁，氧化锆，氧化锰，氧化镉，氧化镁，氧化铪及其组合碳化钽，碳化铌，碳化铪，碳化锆， 碳化铌，碳化锰，碳化铌，碳化铌，碳化铌，碳化铼及其氮化铬，氮化硼及其组合的组合。
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25.发明申请DEVICES INCLUDING AT LEAST ONE ADHESION LAYER AND METHODS OF FORMING ADHESION LAYERS 有权包括至少一个粘合层的装置和形成粘合层的方法公开(公告)号：US20140376349A1
公开(公告)日：2014-12-25
申请号：US14313574
申请日：2014-06-24
发明人： Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Andrew J. Boyne , Michael Allen Seigler , Sethuraman Jayashankar
CPC分类号： G11B5/314 , B05D1/36 , G11B5/3106 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B5/84 , G11B5/85 , G11B5/851 , G11B5/858 , G11B7/1387 , G11B2005/0021
摘要： Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof.
摘要翻译： 包括近场换能器（NFT），NFT具有盘和钉的装置以及具有五个表面的钉; 至少一个粘合层位于钉的五个表面中的至少一个表面上，粘合层包括以下中的一种或多种：铼，锇，铱，铂，铪，钌，锝，铑，钯，铍， 铝，锰，铟，硼及其组合氧化铍，氧化硅，氧化铁，氧化锆，氧化锰，氧化镉，氧化镁，氧化铪及其组合碳化钽，碳化铌，碳化铪，碳化锆， 碳化铌，碳化锰，碳化铌，碳化铌，碳化铌，碳化铼及其氮化铬，氮化硼及其组合的组合。
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26.发明申请MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME 有权近场传感器的材料和包含相同的现场传感器公开(公告)号：US20140376347A1
公开(公告)日：2014-12-25
申请号：US14313528
申请日：2014-06-24
CPC分类号： G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要： Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements.
摘要翻译： 本文公开了包括银，铜或铝和一个或多个次要元素的近场换能器（NFT）。
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27.发明授权Plasmonic transducer having two metal elements with a gap disposed therebetween 有权具有两个金属元件的等离子体换能器，其间设置间隙公开(公告)号：US08824086B2
公开(公告)日：2014-09-02
申请号：US13903311
申请日：2013-05-28
发明人： Chubing Peng , Kaizhong Gao , Lien Lee , Amit Itagi , Michael Allen Seigler , Yimin Niu , Sethuraman Jayashankar
IPC分类号： G11B7/135
CPC分类号： G11B5/4866 , G11B5/3133 , G11B5/6088 , G11B13/08 , G11B2005/0021
摘要： An apparatus includes a waveguide configured to deliver light to a transducer region. The apparatus also includes a plasmonic transducer that has two metal elements configured as side-by-side plates on a substrate-parallel plane with a gap therebetween. The gap is disposed along the substrate-parallel plane and has an input end disposed proximate the transducer region and an output end. The transducer is configured to provide a surface plasmon-enhanced near-field radiation pattern proximate the output end in response to the light received by the waveguide.
摘要翻译： 一种装置包括配置成将光传送到换能器区域的波导。 该装置还包括等离子体激元换能器，其具有在基板平行平面上被配置为并排板的两个金属元件，其间具有间隙。 该间隙沿衬底平行平面设置并具有设置在换能器区域附近的输入端和输出端。 换能器被配置为响应于由波导接收的光提供靠近输出端的表面等离子体增强近场辐射图。
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公开(公告)号：US10971180B2
公开(公告)日：2021-04-06
申请号：US15638453
申请日：2017-06-30
摘要： A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.
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公开(公告)号：US20190088280A1
公开(公告)日：2019-03-21
申请号：US16194707
申请日：2018-11-19
IPC分类号： G11B13/08 , C22C9/02 , G11B7/24059 , C22C5/02 , G11B7/1387 , G11B5/31 , C23C14/58 , G11B5/60 , C01G5/00 , C01F7/00 , G11B5/48 , C22C38/06 , C22C27/06 , C22C27/02 , C22C27/00 , C22C5/06 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C24/00 , C22C5/04 , C22C28/00 , G11B5/00 , C22C21/06 , B32B15/01 , C22C9/10 , C22C9/06 , C22C9/05 , C22C9/04 , C22C9/00 , C22C5/10 , C22C30/02 , C22C19/07
摘要： A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
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公开(公告)号：US10134436B2
公开(公告)日：2018-11-20
申请号：US15871781
申请日：2018-01-15
IPC分类号： G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00 , B32B15/01
摘要： A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
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