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公开(公告)号：US20210278922A1
公开(公告)日：2021-09-09
申请号：US17316768
申请日：2021-05-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Hajime KIMURA , Masami JINTYOU , Yasuharu HOSAKA , Naoto GOTO , Takahiro IGUCHI , Daisuke KUROSAKI , Junichi KOEZUKA
Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
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公开(公告)号：US20200225785A1
公开(公告)日：2020-07-16
申请号：US16830795
申请日：2020-03-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Hajime KIMURA , Masami JINTYOU , Yasuharu HOSAKA , Naoto GOTO , Takahiro IGUCHI , Daisuke KUROSAKI , Junichi KOEZUKA
Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
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公开(公告)号：US20180247990A1
公开(公告)日：2018-08-30
申请号：US15966640
申请日：2018-04-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yasuhiro JINBO , Kohei YOKOYAMA , Yuki TAMATSUKURI , Naoto GOTO , Masami JINTYOU , Masayoshi DOBASHI , Masataka NAKADA , Akihiro CHIDA , Naoyuki SENDA
CPC classification number: H01L27/3258 , H01L51/5253 , H01L2251/301 , H01L2251/5338
Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.
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Patent Agency Ranking
公开(公告)号：US20170263654A1
公开(公告)日：2017-09-14
申请号：US15601330
申请日：2017-05-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daisuke KUBOTA , Ryo HATSUMI , Masami JINTYOU , Takumi SHIGENOBU , Naoto GOTO
IPC: H01L27/12 , G02F1/133 , G02F1/1333 , G02F1/1335 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G06F3/041 , G06F3/044 , H01L29/24 , H01L29/417 , H01L29/45 , H01L29/786 , H01L49/02
CPC classification number: H01L27/1255 , G02F1/13306 , G02F1/133305 , G02F1/133345 , G02F1/13338 , G02F1/133512 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/133357 , G02F2001/13415 , G06F3/0412 , G06F3/044 , G06F2203/04108 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/127 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/78633 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
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公开(公告)号：US20170104049A1
公开(公告)日：2017-04-13
申请号：US15290085
申请日：2016-10-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daiki NAKAMURA , Kohei YOKOYAMA , Yasuhiro JINBO , Toshiki SASAKI , Masataka NAKADA , Naoto GOTO , Takahiro IGUCHI
IPC: H01L27/32 , H01L29/786 , G02F1/1343 , G02F1/1333 , G02F1/1368 , H01L27/12 , G02F1/1335
CPC classification number: H01L27/3267 , G02F1/133345 , G02F1/133553 , G02F1/134309 , G02F1/1368 , G02F2201/44 , H01L27/124 , H01L27/3232 , H01L29/7869
Abstract: A novel display device that is highly convenient with low power consumption is provided. The display device includes a display element including a liquid crystal layer, a display element including a light-emitting layer, and a pixel circuit. Electrodes of the display element including the liquid crystal layer and the display element including the light-emitting layer are electrically connected to the pixel circuit. The electrode of the display element including the liquid crystal layer includes a reflective film including an opening. The pixel circuit includes a transistor including a semiconductor film. The number of insulating films in a region overlapping with the opening is smaller than that of insulating films overlapping with the semiconductor film. In addition, the display element including the light-emitting layer includes two light-emitting elements. The number of optical elements overlapping with one light-emitting element is smaller than that of optical elements overlapping with the other light-emitting element.
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公开(公告)号：US20160299601A1
公开(公告)日：2016-10-13
申请号：US15091295
申请日：2016-04-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hajime KIMURA , Masami JINTYOU , Yasuharu HOSAKA , Naoto GOTO , Takahiro IGUCHI , Daisuke KUROSAKI , Junichi KOEZUKA
IPC: G06F3/044 , H01L27/32 , H01L29/24 , H01L27/12 , H01L29/786
CPC classification number: G06F3/044 , G06F3/0412 , G06F2203/04103 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/323 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
Abstract translation: 提供了包括具有导电性的氧化物半导体膜的触摸面板。 触摸面板包括晶体管，第二绝缘膜和触摸传感器。 晶体管包括栅电极; 栅极绝缘膜; 第一氧化物半导体膜; 源电极和漏电极; 第一绝缘膜; 和第二氧化物半导体膜。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。 触摸传感器包括第一电极和第二电极。 第一和第二电极中的一个包括第二氧化物半导体膜。
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公开(公告)号：US20160240566A1
公开(公告)日：2016-08-18
申请号：US15140837
申请日：2016-04-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daisuke KUBOTA , Ryo HATSUMI , Masami JINTYOU , Takumi SHIGENOBU , Naoto GOTO
IPC: H01L27/12 , H01L29/24 , G02F1/133 , G02F1/1333 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F1/1368 , G06F3/044 , G06F3/041 , G02F1/1335 , H01L29/786 , G02F1/1343
CPC classification number: H01L27/1255 , G02F1/13306 , G02F1/133305 , G02F1/133345 , G02F1/13338 , G02F1/133512 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/133357 , G02F2001/13415 , G06F3/0412 , G06F3/044 , G06F2203/04108 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/127 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/78633 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
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公开(公告)号：US20150187819A1
公开(公告)日：2015-07-02
申请号：US14656285
申请日：2015-03-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daisuke KUBOTA , Ryo HATSUMI , Masami JINTYOU , Takumi SHIGENOBU , Naoto GOTO
IPC: H01L27/12
CPC classification number: H01L27/1255 , G02F1/13306 , G02F1/133305 , G02F1/133345 , G02F1/13338 , G02F1/133512 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/133357 , G02F2001/13415 , G06F3/0412 , G06F3/044 , G06F2203/04108 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/127 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/78633 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
Abstract translation: 提供了具有高开口率并且包括能够增加充电容量的电容器的半导体器件。 半导体器件包括：衬底上的晶体管，衬底上的第一透光导电膜，覆盖晶体管的氧化物绝缘膜，并且在第一透光导电膜上具有开口;氧化物绝缘膜上的氮化物绝缘膜 并且与开口部中的第一透光性导电膜接触，与该晶体管连接并具有开口部的凹部的第二透光性导电膜，以及第二透光性导电膜， 传输导电膜被填充。
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