公开(公告)号：US10516010B2

公开(公告)日：2019-12-24

申请号：US14333078

申请日：2014-07-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L29/16 ,  H01L27/12 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

Abstract: The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

公开(公告)号：US09685277B2

公开(公告)日：2017-06-20

申请号：US15011857

申请日：2016-02-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Kazutaka Kuriki ,  Mikio Yukawa

IPC: H01M4/58 ,  H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/66 ,  H01G11/46 ,  H01M4/48 ,  H01M4/52 ,  H01M10/0525

CPC classification number: H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01G11/46 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/52 ,  H01M4/661 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49115

Abstract: An electrode which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur are provided. The electrode includes an active material layer including a first protrusion, a second protrusion and a continuous active material film, a metal oxide layer, and a continuous mixed layer. The first protrusion, the second protrusion and the continuous active material film includes silicon. The metal oxide layer includes oxygen and a metal element which is capable of forming silicide by reacting with silicon. The continuous mixed layer includes silicon and the metal element.

公开(公告)号：US09666614B2

公开(公告)日：2017-05-30

申请号：US14481458

申请日：2014-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/32 ,  H01L33/52 ,  H01L27/13 ,  H01L51/52

CPC classification number: H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

公开(公告)号：US09281495B2

公开(公告)日：2016-03-08

申请号：US13731129

申请日：2012-12-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Hisashi Ohtani ,  Shunpei Yamazaki

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

公开(公告)号：US09165991B2

公开(公告)日：2015-10-20

申请号：US14588771

申请日：2015-01-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

IPC: H01L29/04 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

Abstract translation: 公开了一种结合了显示装置的显示装置和电子装置。 显示装置包括晶体管和晶体管上的平坦化膜。 平坦化膜具有边缘部分为圆形的开口。 显示装置还包括在平坦化膜上的第一电极和在第一电极上的有机树脂膜。 有机树脂膜也具有边缘部分为圆形的开口。 有机树脂膜位于平坦化膜的开口内。 第一电极和晶体管通过导电膜彼此电连接。 第一电极与导电膜的顶表面接触。 在第一电极上设置有发光部件和第二电极。

公开(公告)号：US09153604B2

公开(公告)日：2015-10-06

申请号：US14493686

申请日：2014-09-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC: H01L27/12 ,  H01L31/0216 ,  G02F1/1345 ,  G02F1/1362 ,  H01L29/66 ,  H01L29/786 ,  H01L27/15 ,  H01L29/45

CPC classification number: H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

Abstract: An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Abstract translation: 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V /分钟的单位时间的施加电压进行阳极氧化，所以在电极上没有卷绕，可以防止膜剥离。

公开(公告)号：US08994887B2

公开(公告)日：2015-03-31

申请号：US14499313

申请日：2014-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

IPC: G02F1/136 ,  G02F1/1343 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362

CPC classification number: H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Abstract translation: 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

公开(公告)号：US08803152B2

公开(公告)日：2014-08-12

申请号：US13865504

申请日：2013-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC: H01L33/00

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。

公开(公告)号：US20140014964A1

公开(公告)日：2014-01-16

申请号：US14026369

申请日：2013-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

IPC: H01L29/04

CPC classification number: H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

Abstract translation: 在半导体器件中，栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。

公开(公告)号：US20130341626A1

公开(公告)日：2013-12-26

申请号：US13898077

申请日：2013-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC: H01L27/15

CPC classification number: H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

Abstract: An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Abstract translation: 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。